Epitaxial silicon grown on CeO2/Si(111) structure by molecular beam epitaxy

Using electron beam evaporation, a Si/CeO2/Si(111) structure has been grown in a molecular beam epitaxy machine. In situ low energy electron diffraction, cross sectional transmission electron microscopy, selected area diffraction, and atomic force microscopy have been used to structurally characterize the overlying silicon layer and show it to be single crystalline and epitaxially oriented. Rutherford backscattering and energy dispersive x-ray analysis have been used to confirm the presence of a continuous 23 Å CeO2 layer at the interface. Rutherford backscattering and x-ray photoemission spectroscopy show an additional presence of cerium both at the exposed silicon surface and incorporated in low levels (~ 1%) within the silicon film, suggesting a growth mechanism with cerium riding atop the silicon growth front leaving behind small amounts of cerium incorporated in the growing silicon crystal

Simultaneous PIXE and RBS data analysis using Bayesian Inference with the DataFurnace code

The Rutherford Backscattering Spectroscopy (RBS) and Particle Induced X-ray Emission (PIXE) techniques can be used to obtain complementary information about the characteristics of a sample but, traditionally, a gap has separated the available computer codes for analyzing data from each technique, being hard to simultaneously analyze data from the same sample. The recent development of a free and open source library, LibCPIXE, for PIXE simulation and analysis of arbitrary multilayered samples, has permitted to integrate this technique into the DataFurnace code which already handles many other IBA techniques such as Rutherford and non-Rutherford backscattering, elastic recoil detection, and non-resonant nuclear reaction analysis. The fitting capabilities of DataFurnace can therefore now be applied to PIXE spectra as well, including the Bayesian Inference analysis and the simultaneous and coherent fitting of multiple spectra from different techniques. Various examples are presented in which the simultaneous RBS and PIXE analysis allows us to obtain consistent results that cannot be obtained by independent analysis of the data from each technique.Comment: 10 pages, 5 figures. Paper initially presented to IBA2005. Please cite the published version (DOI:10.1016/j.nimb.2006.03.190

Accurate high-resolution depth profiling of magnetron sputtered transition metal alloy films containing light species: A multi-method approach

We present an assessment of a multi-method approach based on ion beam analysis to obtain high-resolution depth profiles of the total chemical composition of complex alloy systems. As a model system we employ an alloy based on several transition metals and containing light species. Samples have been investigated by a number of different ion-beam based techniques, i.e., Rutherford Backscattering Spectrometry, Particle-Induced X-ray Emission, Elastic Backscattering Spectrometry and Time-of-Flight/Energy Elastic Recoil Detection Analysis. Sets of spectra obtained from these different techniques were analyzed both independently and following an iterative and self-consistent approach yielding a more accurate depth profile of the sample, including both metallic heavy constituents (Cr, Fe and Ni) as well as the rather reactive light species (C, O) in the alloy. A quantitative comparison in terms of achievable precision and accuracy is made and the limitations of the single method approach are discussed for the different techniques. The multi-method approach is shown to yield significantly improved and accurate information on stoichiometry, depth distribution, and thickness of the alloy with the improvements being decisive for a detailed correlation of composition to the material properties such as corrosion strength. The study also shows the increased relative importance of experimental statistics for the achievable accuracy in the multi-method approach.Comment: 18 pages, 6 figures and 1 tabl

Size distribution of sputtered particles from Au nanoislands due to MeV self-ion bombardment

Nanoisland gold films, deposited by vacuum evaporation of gold onto Si(100) substrates, were irradiated with 1.5 MeV Au$^{2+}$ ions up to a fluence of $5\times 10^{14}$ ions cm$^{-2}$ and at incidence angles up to $60^{\circ}$ with respect to the surface normal. The sputtered particles were collected on carbon coated grids (catcher grid) during ion irradiation and were analyzed with transmission electron microscopy and Rutherford backscattering spectrometry. The average sputtered particle size and the areal coverage are determined from transmission electron microscopy measurements, whereas the amount of gold on the substrate is found by Rutherford backscattering spectrometry. The size distributions of larger particles (number of atoms/particle, $n$ $\ge$ 1,000) show an inverse power-law with an exponent of $\sim$ -1 in broad agreement with a molecular dynamics simulation of ion impact on cluster targets.Comment: 13 pages, 8 figures, Submitted for publication in JA

Nearly strain-free heteroepitaxial system for fundamental studies of pulsed laser deposition: EuTiO3 on SrTiO3

High quality epitaxial thin-films of EuTiO3 have been grown on the (001) surface of SrTiO3 using pulsed laser deposition. In situ x-ray reflectivity measurements reveal that the growth is two-dimensional and enable real-time monitoring of the film thickness and roughness during growth. The film thickness, surface mosaic, surface roughness, and strain were characterized in detail using ex situ x-ray diffraction. The thicnkess and composition were confirmed with Rutherford Backscattering. The EuTiO3 films grow two-dimensionally, epitaxially, pseudomorphically, with no measurable in-plane lattice mismatch.Comment: 7 pages, 6 figure