4 research outputs found
Broadband PureGaB Ge-on-Si photodiodes responsive in the ultraviolet to near-infrared range
Optical characterization of PureGaB germanium-on-silicon (Ge-on-Si) photodiodes was performed for wavelengths between 255 nm and 1550 nm. In PureGaB technology, chemical vapor deposition is used to grow germanium islands in oxide windows to the silicon substrate and then cap them in-situ with nm-thin layers of first gallium and then boron, thus forming nm-shallow p+n diodes. These PureGaB Ge-on-Si photodiodes are CMOS compatible and characterized by low leakage currents. Here they are shown to have high responsivity in the whole ultraviolet (UV) to near infrared (NIR) wavelength range. Particularly, two sets of diodes were studied with respect to possible detrimental effects of the Al metallization/alloying process steps on the responsivity. Al-mediated transport of the Ge and underlying Si was observed if the PureGaB layer, which forms a barrier to metal layers, did not cover all surfaces of the Ge islands. A simulation study was performed confirming that the presence of acceptor traps at the Ge/Si interface could decrease the otherwise high theoretically attainable responsivity of PureGaB Ge-on-Si photodiodes in the whole UV to NIR range. A modification of the device structure is proposed where the PureGaB layer covers not only the top surface of the Ge-islands, but also the sidewalls. It was found that to mitigate premature breakdown, it would be necessary to add p-doped guard rings in Si around the perimeter of Ge islands, but this PureGaB-all-around structure would not compromise the optical performance.</p
ΠΠ°Π²ΠΈΠ½Π½ΡΠ΅ ΡΠ²Π΅ΡΠΎΠ΄ΠΈΠΎΠ΄Ρ Π½Π° ΠΎΡΠ½ΠΎΠ²Π΅ Π½Π°Π½ΠΎΡΡΡΡΠΊΡΡΡΠΈΡΠΎΠ²Π°Π½Π½ΠΎΠ³ΠΎ ΠΊΡΠ΅ΠΌΠ½ΠΈΡ Π΄Π»Ρ ΠΎΠΏΡΠΈΡΠ΅ΡΠΊΠΈΡ ΠΌΠ΅ΠΆΡΠΎΠ΅Π΄ΠΈΠ½Π΅Π½ΠΈΠΉ
The paper analyzes the parameters of silicon avalanche LEDs and their use for electron-optical signal transmission systems. The advantages of silicon avalanche LEDs are shown, among which high speed and compatibility with silicon technology should be highlighted. Experimental avalanche LEDs based on nanostructured silicon were fabricated and studied. The results of controlling the electroluminescence spectrum of avalanche LEDs due to the choice of production conditions to form nanostructured silicon are presented. It was found that the temperature of the substrate during the deposition of the surface nanocomposite aluminum + silicon film affected the size of the formed silicon nanoparticles determining the spectral characteristics of avalanche LEDs. This allows shifting the maximum of their emission spectrum to a shorter wavelength region of the visible range due to the forming of smaller silicon nanoparticles. The authors have developed an optical interconnection system consisting of avalanche LEDs based on nanostructured silicon and a microchannel silicon wafer used to transmit a light signal. The study of various operating modes of the developed optoelectronic system was performed and an increase in the efficiency of optocouple based on avalanche LEDs to 0.2% due to the pulsed operating mode was achieved. It is shown that the efficiency of the optocouple increases with LED current and it is the pulsed mode of its operation that is characterized by the maximum current, which is due to more efficient removal of Joule heat in the intervals between pulses, ensuring stable operation of the entire system. The results obtained open up new opportunities for the development of optical interconnections between silicon chips and silicon optoelectronics in general.Π ΡΠ°Π±ΠΎΡΠ΅ ΠΏΡΠΎΠ²Π΅Π΄Π΅Π½ Π°Π½Π°Π»ΠΈΠ· ΠΏΠ°ΡΠ°ΠΌΠ΅ΡΡΠΎΠ² ΠΊΡΠ΅ΠΌΠ½ΠΈΠ΅Π²ΡΡ
Π»Π°Π²ΠΈΠ½Π½ΡΡ
ΡΠ²Π΅ΡΠΎΠ΄ΠΈΠΎΠ΄ΠΎΠ² ΠΈ ΠΈΡ
ΠΈΡΠΏΠΎΠ»ΡΠ·ΠΎΠ²Π°Π½ΠΈΡ Π΄Π»Ρ ΡΠ»Π΅ΠΊΡΡΠΎΠ½Π½ΠΎ-ΠΎΠΏΡΠΈΡΠ΅ΡΠΊΠΈΡ
ΡΠΈΡΡΠ΅ΠΌ ΠΏΠ΅ΡΠ΅Π΄Π°ΡΠΈ ΡΠΈΠ³Π½Π°Π»ΠΎΠ². ΠΠΎΠΊΠ°Π·Π°Π½Ρ ΠΏΡΠ΅ΠΈΠΌΡΡΠ΅ΡΡΠ²Π° Π΄Π°Π½Π½ΡΡ
ΠΏΡΠΈΠ±ΠΎΡΠΎΠ², ΡΡΠ΅Π΄ΠΈ ΠΊΠΎΡΠΎΡΡΡ
ΡΠ»Π΅Π΄ΡΠ΅Ρ Π²ΡΠ΄Π΅Π»ΠΈΡΡ Π²ΡΡΠΎΠΊΠΎΠ΅ Π±ΡΡΡΡΠΎΠ΄Π΅ΠΉΡΡΠ²ΠΈΠ΅ ΠΈ ΡΠΎΠ²ΠΌΠ΅ΡΡΠΈΠΌΠΎΡΡΡ Ρ ΠΊΡΠ΅ΠΌΠ½ΠΈΠ΅Π²ΠΎΠΉ ΡΠ΅Ρ
Π½ΠΎΠ»ΠΎΠ³ΠΈΠ΅ΠΉ. ΠΠ·Π³ΠΎΡΠΎΠ²Π»Π΅Π½Ρ ΡΠΊΡΠΏΠ΅ΡΠΈΠΌΠ΅Π½ΡΠ°Π»ΡΠ½ΡΠ΅ ΠΎΠ±ΡΠ°Π·ΡΡ Π»Π°Π²ΠΈΠ½Π½ΡΡ
ΡΠ²Π΅ΡΠΎΠ΄ΠΈΠΎΠ΄ΠΎΠ² Π½Π° ΠΎΡΠ½ΠΎΠ²Π΅ Π½Π°Π½ΠΎΡΡΡΡΠΊΡΡΡΠΈΡΠΎΠ²Π°Π½Π½ΠΎΠ³ΠΎ ΠΊΡΠ΅ΠΌΠ½ΠΈΡ ΠΈ ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½Ρ ΠΈΡ
ΡΡΡΡΠΊΡΡΡΠ½ΡΠ΅ ΠΈ ΠΎΠΏΡΠΈΡΠ΅ΡΠΊΠΈΠ΅ Ρ
Π°ΡΠ°ΠΊΡΠ΅ΡΠΈΡΡΠΈΠΊΠΈ. ΠΡΠ΅Π΄ΡΡΠ°Π²Π»Π΅Π½Ρ ΡΠ΅Π·ΡΠ»ΡΡΠ°ΡΡ ΡΠΏΡΠ°Π²Π»Π΅Π½ΠΈΡ ΡΠΏΠ΅ΠΊΡΡΠΎΠΌ ΡΠ»Π΅ΠΊΡΡΠΎΠ»ΡΠΌΠΈΠ½Π΅ΡΡΠ΅Π½ΡΠΈΠΈ Π»Π°Π²ΠΈΠ½Π½ΡΡ
ΡΠ²Π΅ΡΠΎΠ΄ΠΈΠΎΠ΄ΠΎΠ² Π·Π° ΡΡΠ΅Ρ Π²ΡΠ±ΠΎΡΠ° ΡΠ΅Ρ
Π½ΠΎΠ»ΠΎΠ³ΠΈΡΠ΅ΡΠΊΠΈΡ
ΡΠ΅ΠΆΠΈΠΌΠΎΠ² ΡΠΎΡΠΌΠΈΡΠΎΠ²Π°Π½ΠΈΡ Π½Π°Π½ΠΎΡΡΡΡΠΊΡΡΡΠΈΡΠΎΠ²Π°Π½Π½ΠΎΠ³ΠΎ ΠΊΡΠ΅ΠΌΠ½ΠΈΡ. Π£ΡΡΠ°Π½ΠΎΠ²Π»Π΅Π½ΠΎ, ΡΡΠΎ ΡΠ΅ΠΌΠΏΠ΅ΡΠ°ΡΡΡΠ° ΠΏΠΎΠ΄Π»ΠΎΠΆΠΊΠΈ Π² ΠΏΡΠΎΡΠ΅ΡΡΠ΅ ΠΎΡΠ°ΠΆΠ΄Π΅Π½ΠΈΡ ΠΏΠΎΠ²Π΅ΡΡ
Π½ΠΎΡΡΠ½ΠΎΠΉ Π½Π°Π½ΠΎΠΊΠΎΠΌΠΏΠΎΠ·ΠΈΡΠ½ΠΎΠΉ ΠΏΠ»Π΅Π½ΠΊΠΈ Π°Π»ΡΠΌΠΈΠ½ΠΈΠΉ + ΠΊΡΠ΅ΠΌΠ½ΠΈΠΉ Π²Π»ΠΈΡΠ΅Ρ Π½Π° ΡΠ°Π·ΠΌΠ΅ΡΡ ΡΠΎΡΠΌΠΈΡΡΡΡΠΈΡ
ΡΡ ΠΊΡΠ΅ΠΌΠ½ΠΈΠ΅Π²ΡΡ
Π½Π°Π½ΠΎΡΠ°ΡΡΠΈΡ, ΠΎΠΏΡΠ΅Π΄Π΅Π»ΡΡΡΠΈΡ
ΡΠΏΠ΅ΠΊΡΡΠ°Π»ΡΠ½ΡΠ΅ Ρ
Π°ΡΠ°ΠΊΡΠ΅ΡΠΈΡΡΠΈΠΊΠΈ Π»Π°Π²ΠΈΠ½Π½ΡΡ
ΡΠ²Π΅ΡΠΎΠ΄ΠΈΠΎΠ΄ΠΎΠ². ΠΡΠΎ ΠΏΠΎΠ·Π²ΠΎΠ»ΡΠ΅Ρ ΡΠΌΠ΅ΡΠ°ΡΡ ΠΌΠ°ΠΊΡΠΈΠΌΡΠΌ ΡΠΏΠ΅ΠΊΡΡΠ° ΠΈΡ
ΠΈΠ·Π»ΡΡΠ΅Π½ΠΈΡ Π² Π±ΠΎΠ»Π΅Π΅ ΠΊΠΎΡΠΎΡΠΊΠΎΠ²ΠΎΠ»Π½ΠΎΠ²ΡΡ ΠΎΠ±Π»Π°ΡΡΡ Π²ΠΈΠ΄ΠΈΠΌΠΎΠ³ΠΎ Π΄ΠΈΠ°ΠΏΠ°Π·ΠΎΠ½Π° Π·Π° ΡΡΠ΅Ρ ΡΠΎΡΠΌΠΈΡΠΎΠ²Π°Π½ΠΈΡ ΠΊΡΠ΅ΠΌΠ½ΠΈΠ΅Π²ΡΡ
Π½Π°Π½ΠΎΡΠ°ΡΡΠΈΡ ΠΌΠ΅Π½ΡΡΠΈΡ
ΡΠ°Π·ΠΌΠ΅ΡΠΎΠ². Π Π°Π·ΡΠ°Π±ΠΎΡΠ°Π½Π° ΡΠΈΡΡΠ΅ΠΌΠ° ΠΎΠΏΡΠΈΡΠ΅ΡΠΊΠΈΡ
ΠΌΠ΅ΠΆΡΠΎΠ΅Π΄ΠΈΠ½Π΅Π½ΠΈΠΉ, ΡΠΎΡΡΠΎΡΡΠ°Ρ ΠΈΠ· Π»Π°Π²ΠΈΠ½Π½ΡΡ
ΡΠ²Π΅ΡΠΎΠ΄ΠΈΠΎΠ΄ΠΎΠ² Π½Π° ΠΎΡΠ½ΠΎΠ²Π΅ Π½Π°Π½ΠΎΡΡΡΡΠΊΡΡΡΠΈΡΠΎΠ²Π°Π½Π½ΠΎΠ³ΠΎ ΠΊΡΠ΅ΠΌΠ½ΠΈΡ ΠΈ ΠΌΠΈΠΊΡΠΎΠΊΠ°Π½Π°Π»ΡΠ½ΠΎΠΉ ΠΊΡΠ΅ΠΌΠ½ΠΈΠ΅Π²ΠΎΠΉ ΠΏΠ»Π°ΡΡΠΈΠ½Ρ, ΠΈΡΠΏΠΎΠ»ΡΠ·ΡΠ΅ΠΌΠΎΠΉ Π΄Π»Ρ ΠΏΠ΅ΡΠ΅Π΄Π°ΡΠΈ ΡΠ²Π΅ΡΠΎΠ²ΠΎΠ³ΠΎ ΡΠΈΠ³Π½Π°Π»Π°. ΠΡΠΎΠ²Π΅Π΄Π΅Π½ΠΎ ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½ΠΈΠ΅ ΡΠ°Π·Π»ΠΈΡΠ½ΡΡ
ΡΠ΅ΠΆΠΈΠΌΠΎΠ² ΡΡΠ½ΠΊΡΠΈΠΎΠ½ΠΈΡΠΎΠ²Π°Π½ΠΈΡ ΡΠ°Π·ΡΠ°Π±ΠΎΡΠ°Π½Π½ΠΎΠΉ ΠΎΠΏΡΠΎΡΠ»Π΅ΠΊΡΡΠΎΠ½Π½ΠΎΠΉ ΡΠΈΡΡΠ΅ΠΌΡ ΠΈ Π΄ΠΎΡΡΠΈΠ³Π½ΡΡΠΎ ΡΠ²Π΅Π»ΠΈΡΠ΅Π½ΠΈΠ΅ ΡΡΡΠ΅ΠΊΡΠΈΠ²Π½ΠΎΡΡΠΈ ΠΎΠΏΡΠΎΠΏΠ°ΡΡ Π½Π° ΠΎΡΠ½ΠΎΠ²Π΅ Π»Π°Π²ΠΈΠ½Π½ΡΡ
ΡΠ²Π΅ΡΠΎΠ΄ΠΈΠΎΠ΄ΠΎΠ² Π΄ΠΎ 0,2 % Π·Π° ΡΡΠ΅Ρ ΠΈΠΌΠΏΡΠ»ΡΡΠ½ΠΎΠ³ΠΎ ΡΠ΅ΠΆΠΈΠΌΠ° ΡΡΠ½ΠΊΡΠΈΠΎΠ½ΠΈΡΠΎΠ²Π°Π½ΠΈΡ. ΠΠΎΠΊΠ°Π·Π°Π½ΠΎ, ΡΡΠΎ ΡΡΡΠ΅ΠΊΡΠΈΠ²Π½ΠΎΡΡΡ ΠΎΠΏΡΠΎΠΏΠ°ΡΡ ΡΠ²Π΅Π»ΠΈΡΠΈΠ²Π°Π΅ΡΡΡ ΠΏΡΠΈ ΡΠ²Π΅Π»ΠΈΡΠ΅Π½ΠΈΠΈ ΡΠΎΠΊΠ° ΡΠ²Π΅ΡΠΎΠ΄ΠΈΠΎΠ΄Π°, ΠΈ ΠΈΠΌΠ΅Π½Π½ΠΎ ΠΈΠΌΠΏΡΠ»ΡΡΠ½ΡΠΉ ΡΠ΅ΠΆΠΈΠΌ Π΅Π³ΠΎ ΡΠ°Π±ΠΎΡΡ Ρ
Π°ΡΠ°ΠΊΡΠ΅ΡΠΈΠ·ΡΠ΅ΡΡΡ ΠΌΠ°ΠΊΡΠΈΠΌΠ°Π»ΡΠ½ΡΠΌ Π·Π½Π°ΡΠ΅Π½ΠΈΠ΅ΠΌ ΡΠΎΠΊΠ°, ΡΡΠΎ ΠΎΠ±ΡΡΠ»ΠΎΠ²Π»Π΅Π½ΠΎ Π±ΠΎΠ»Π΅Π΅ ΡΡΡΠ΅ΠΊΡΠΈΠ²Π½ΡΠΌ ΠΎΡΠ²ΠΎΠ΄ΠΎΠΌ Π΄ΠΆΠΎΡΠ»Π΅Π²ΠΎΠ³ΠΎ ΡΠ΅ΠΏΠ»Π° Π² ΠΏΡΠΎΠΌΠ΅ΠΆΡΡΠΊΠ°Ρ
ΠΌΠ΅ΠΆΠ΄Ρ ΠΈΠΌΠΏΡΠ»ΡΡΠ°ΠΌΠΈ, ΠΎΠ±Π΅ΡΠΏΠ΅ΡΠΈΠ²Π°ΡΡΠΈΠΌ ΡΡΠ°Π±ΠΈΠ»ΡΠ½ΡΡ ΡΠ°Π±ΠΎΡΡ Π²ΡΠ΅ΠΉ ΡΠΈΡΡΠ΅ΠΌΡ. ΠΠΎΠ»ΡΡΠ΅Π½Π½ΡΠ΅ ΡΠ΅Π·ΡΠ»ΡΡΠ°ΡΡ ΠΎΡΠΊΡΡΠ²Π°ΡΡ Π½ΠΎΠ²ΡΠ΅ Π²ΠΎΠ·ΠΌΠΎΠΆΠ½ΠΎΡΡΠΈ Π΄Π»Ρ ΡΠ°Π·Π²ΠΈΡΠΈΡ ΠΎΠΏΡΠΈΡΠ΅ΡΠΊΠΈΡ
ΠΌΠ΅ΠΆΡΠΎΠ΅Π΄ΠΈΠ½Π΅Π½ΠΈΠΉ ΠΌΠ΅ΠΆΠ΄Ρ ΠΊΡΠ΅ΠΌΠ½ΠΈΠ΅Π²ΡΠΌΠΈ ΡΠΈΠΏΠ°ΠΌΠΈ ΠΈ ΠΊΡΠ΅ΠΌΠ½ΠΈΠ΅Π²ΠΎΠΉ ΠΎΠΏΡΠΎΡΠ»Π΅ΠΊΡΡΠΎΠ½ΠΈΠΊΠΈ Π² ΡΠ΅Π»ΠΎΠΌ
Reverse breakdown and light-emission patterns studied in Si PureB SPADs
The relationship between light-emission patterns from silicon avalanche-mode light-emitting diodes (AMLEDs), and avalanche breakdown was investigated using photodiodes fabricated in pure boron (PureB) technology. The quality of the diodes ranged from high-quality, low dark-current devices with abrupt breakdown characteristics that were suitable for operation as single-photon avalanche diodes (SPADs), to diodes with gradually increasing reverse currents before actual breakdown. The reverse I-V characteristics were measured and correlated to light-emission data obtained simultaneously using a PureB photodetector, and inspected using a camera with which distinct emission patterns could be identified. When increasing the voltage far past breakdown, light emission invariably becomes dominant at the photodiode periphery. Based on the examination of a large variety of anode geometries, it is concluded that the most efficient light emission per consumed power is achieved with defect-free narrow-anode diodes that also are applicable as low-dark-count-rate SPADs