BRISC-V: An Open-Source Architecture Design Space Exploration Toolbox

In this work, we introduce a platform for register-transfer level (RTL) architecture design space exploration. The platform is an open-source, parameterized, synthesizable set of RTL modules for designing RISC-V based single and multi-core architecture systems. The platform is designed with a high degree of modularity. It provides highly-parameterized, composable RTL modules for fast and accurate exploration of different RISC-V based core complexities, multi-level caching and memory organizations, system topologies, router architectures, and routing schemes. The platform can be used for both RTL simulation and FPGA based emulation. The hardware modules are implemented in synthesizable Verilog using no vendor-specific blocks. The platform includes a RISC-V compiler toolchain to assist in developing software for the cores, a web-based system configuration graphical user interface (GUI) and a web-based RISC-V assembly simulator. The platform supports a myriad of RISC-V architectures, ranging from a simple single cycle processor to a multi-core SoC with a complex memory hierarchy and a network-on-chip. The modules are designed to support incremental additions and modifications. The interfaces between components are particularly designed to allow parts of the processor such as whole cache modules, cores or individual pipeline stages, to be modified or replaced without impacting the rest of the system. The platform allows researchers to quickly instantiate complete working RISC-V multi-core systems with synthesizable RTL and make targeted modifications to fit their needs. The complete platform (including Verilog source code) can be downloaded at https://ascslab.org/research/briscv/explorer/explorer.html.Comment: In Proceedings of the 2019 ACM/SIGDA International Symposium on Field-Programmable Gate Arrays (FPGA '19

HALLS: An Energy-Efficient Highly Adaptable Last Level STT-RAM Cache for Multicore Systems

Spin-Transfer Torque RAM (STT-RAM) is widely considered a promising alternative to SRAM in the memory hierarchy due to STT-RAM's non-volatility, low leakage power, high density, and fast read speed. The STT-RAM's small feature size is particularly desirable for the last-level cache (LLC), which typically consumes a large area of silicon die. However, long write latency and high write energy still remain challenges of implementing STT-RAMs in the CPU cache. An increasingly popular method for addressing this challenge involves trading off the non-volatility for reduced write speed and write energy by relaxing the STT-RAM's data retention time. However, in order to maximize energy saving potential, the cache configurations, including STT-RAM's retention time, must be dynamically adapted to executing applications' variable memory needs. In this paper, we propose a highly adaptable last level STT-RAM cache (HALLS) that allows the LLC configurations and retention time to be adapted to applications' runtime execution requirements. We also propose low-overhead runtime tuning algorithms to dynamically determine the best (lowest energy) cache configurations and retention times for executing applications. Compared to prior work, HALLS reduced the average energy consumption by 60.57% in a quad-core system, while introducing marginal latency overhead.Comment: To Appear on IEEE Transactions on Computers (TC

Exploring Processor and Memory Architectures for Multimedia

Multimedia has become one of the cornerstones of our 21st century society and, when combined with mobility, has enabled a tremendous evolution of our society. However, joining these two concepts introduces many technical challenges. These range from having sufficient performance for handling multimedia content to having the battery stamina for acceptable mobile usage. When taking a projection of where we are heading, we see these issues becoming ever more challenging by increased mobility as well as advancements in multimedia content, such as introduction of stereoscopic 3D and augmented reality. The increased performance needs for handling multimedia come not only from an ongoing step-up in resolution going from QVGA (320x240) to Full HD (1920x1080) a 27x increase in less than half a decade. On top of this, there is also codec evolution (MPEG-2 to H.264 AVC) that adds to the computational load increase. To meet these performance challenges there has been processing and memory architecture advances (SIMD, out-of-order superscalarity, multicore processing and heterogeneous multilevel memories) in the mobile domain, in conjunction with ever increasing operating frequencies (200MHz to 2GHz) and on-chip memory sizes (128KB to 2-3MB). At the same time there is an increase in requirements for mobility, placing higher demands on battery-powered systems despite the steady increase in battery capacity (500 to 2000mAh). This leaves negative net result in-terms of battery capacity versus performance advances. In order to make optimal use of these architectural advances and to meet the power limitations in mobile systems, there is a need for taking an overall approach on how to best utilize these systems. The right trade-off between performance and power is crucial. On top of these constraints, the flexibility aspects of the system need to be addressed. All this makes it very important to reach the right architectural balance in the system. The first goal for this thesis is to examine multimedia applications and propose a flexible solution that can meet the architectural requirements in a mobile system. Secondly, propose an automated methodology of optimally mapping multimedia data and instructions to a heterogeneous multilevel memory subsystem. The proposed methodology uses constraint programming for solving a multidimensional optimization problem. Results from this work indicate that using today’s most advanced mobile processor technology together with a multi-level heterogeneous on-chip memory subsystem can meet the performance requirements for handling multimedia. By utilizing the automated optimal memory mapping method presented in this thesis lower total power consumption can be achieved, whilst performance for multimedia applications is improved, by employing enhanced memory management. This is achieved through reduced external accesses and better reuse of memory objects. This automatic method shows high accuracy, up to 90%, for predicting multimedia memory accesses for a given architecture

Integrating adaptive on-chip storage structures for reduced dynamic power

Journal ArticleEnergy efficiency in microarchitectures has become a necessity. Significant dynamic energy savings can be realized for adaptive storage structures such as caches, issue queues, and register files by disabling unnecessary storage resources. Prior studies have analyzed individual structures and their control. A common theme to these studies is exploration of the configuration space and use of system IPC as feedback to guide reconfiguration. However, when multiple structures adapt in concert, the number of possible configurations increases dramatically, and assigning causal effects to IPC change becomes problematic. To overcome this issue, we introduce designs that are reconfigured solely on local behavior. We introduce a novel cache design that permits direct calculation of efficient configurations. For buffer and queue structures, limited histogramming permits precise resizing control. When applying these techniques we show energy savings of up to 70% on the individual structures, and savings averaging 30% overall for the portion of energy attributed to these structures with an average of 2.1% performance degradation

Parallel Architectures for Planetary Exploration Requirements (PAPER)

The Parallel Architectures for Planetary Exploration Requirements (PAPER) project is essentially research oriented towards technology insertion issues for NASA's unmanned planetary probes. It was initiated to complement and augment the long-term efforts for space exploration with particular reference to NASA/LaRC's (NASA Langley Research Center) research needs for planetary exploration missions of the mid and late 1990s. The requirements for space missions as given in the somewhat dated Advanced Information Processing Systems (AIPS) requirements document are contrasted with the new requirements from JPL/Caltech involving sensor data capture and scene analysis. It is shown that more stringent requirements have arisen as a result of technological advancements. Two possible architectures, the AIPS Proof of Concept (POC) configuration and the MAX Fault-tolerant dataflow multiprocessor, were evaluated. The main observation was that the AIPS design is biased towards fault tolerance and may not be an ideal architecture for planetary and deep space probes due to high cost and complexity. The MAX concepts appears to be a promising candidate, except that more detailed information is required. The feasibility for adding neural computation capability to this architecture needs to be studied. Key impact issues for architectural design of computing systems meant for planetary missions were also identified

Coarse-grained reconfigurable array architectures

Coarse-Grained Reconfigurable Array (CGRA) architectures accelerate the same inner loops that benefit from the high ILP support in VLIW architectures. By executing non-loop code on other cores, however, CGRAs can focus on such loops to execute them more efficiently. This chapter discusses the basic principles of CGRAs, and the wide range of design options available to a CGRA designer, covering a large number of existing CGRA designs. The impact of different options on flexibility, performance, and power-efficiency is discussed, as well as the need for compiler support. The ADRES CGRA design template is studied in more detail as a use case to illustrate the need for design space exploration, for compiler support and for the manual fine-tuning of source code

Gestión de jerarquías de memoria híbridas a nivel de sistema

Tesis inédita de la Universidad Complutense de Madrid, Facultad de Informática, Departamento de Arquitectura de Computadoras y Automática y de Ku Leuven, Arenberg Doctoral School, Faculty of Engineering Science, leída el 11/05/2017.In electronics and computer science, the term ‘memory’ generally refers to devices that are used to store information that we use in various appliances ranging from our PCs to all hand-held devices, smart appliances etc. Primary/main memory is used for storage systems that function at a high speed (i.e. RAM). The primary memory is often associated with addressable semiconductor memory, i.e. integrated circuits consisting of silicon-based transistors, used for example as primary memory but also other purposes in computers and other digital electronic devices. The secondary/auxiliary memory, in comparison provides program and data storage that is slower to access but offers larger capacity. Examples include external hard drives, portable flash drives, CDs, and DVDs. These devices and media must be either plugged in or inserted into a computer in order to be accessed by the system. Since secondary storage technology is not always connected to the computer, it is commonly used for backing up data. The term storage is often used to describe secondary memory. Secondary memory stores a large amount of data at lesser cost per byte than primary memory; this makes secondary storage about two orders of magnitude less expensive than primary storage. There are two main types of semiconductor memory: volatile and nonvolatile. Examples of non-volatile memory are ‘Flash’ memory (sometimes used as secondary, sometimes primary computer memory) and ROM/PROM/EPROM/EEPROM memory (used for firmware such as boot programs). Examples of volatile memory are primary memory (typically dynamic RAM, DRAM), and fast CPU cache memory (typically static RAM, SRAM, which is fast but energy-consuming and offer lower memory capacity per are a unit than DRAM). Non-volatile memory technologies in Si-based electronics date back to the 1990s. Flash memory is widely used in consumer electronic products such as cellphones and music players and NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. The rapid increase of leakage currents in Silicon CMOS transistors with scaling poses a big challenge for the integration of SRAM memories. There is also the case of susceptibility to read/write failure with low power schemes. As a result of this, over the past decade, there has been an extensive pooling of time, resources and effort towards developing emerging memory technologies like Resistive RAM (ReRAM/RRAM), STT-MRAM, Domain Wall Memory and Phase Change Memory(PRAM). Emerging non-volatile memory technologies promise new memories to store more data at less cost than the expensive-to build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. These new memory technologies combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the non-volatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. The research and information on these Non-Volatile Memory (NVM) technologies has matured over the last decade. These NVMs are now being explored thoroughly nowadays as viable replacements for conventional SRAM based memories even for the higher levels of the memory hierarchy. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional(3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years...En el campo de la informática, el término ‘memoria’ se refiere generalmente a dispositivos que son usados para almacenar información que posteriormente será usada en diversos dispositivos, desde computadoras personales (PC), móviles, dispositivos inteligentes, etc. La memoria principal del sistema se utiliza para almacenar los datos e instrucciones de los procesos que se encuentre en ejecución, por lo que se requiere que funcionen a alta velocidad (por ejemplo, DRAM). La memoria principal está implementada habitualmente mediante memorias semiconductoras direccionables, siendo DRAM y SRAM los principales exponentes. Por otro lado, la memoria auxiliar o secundaria proporciona almacenaje(para ficheros, por ejemplo); es más lenta pero ofrece una mayor capacidad. Ejemplos típicos de memoria secundaria son discos duros, memorias flash portables, CDs y DVDs. Debido a que estos dispositivos no necesitan estar conectados a la computadora de forma permanente, son muy utilizados para almacenar copias de seguridad. La memoria secundaria almacena una gran cantidad de datos aun coste menor por bit que la memoria principal, siendo habitualmente dos órdenes de magnitud más barata que la memoria primaria. Existen dos tipos de memorias de tipo semiconductor: volátiles y no volátiles. Ejemplos de memorias no volátiles son las memorias Flash (algunas veces usadas como memoria secundaria y otras veces como memoria principal) y memorias ROM/PROM/EPROM/EEPROM (usadas para firmware como programas de arranque). Ejemplos de memoria volátil son las memorias DRAM (RAM dinámica), actualmente la opción predominante a la hora de implementar la memoria principal, y las memorias SRAM (RAM estática) más rápida y costosa, utilizada para los diferentes niveles de cache. Las tecnologías de memorias no volátiles basadas en electrónica de silicio se remontan a la década de1990. Una variante de memoria de almacenaje por carga denominada como memoria Flash es mundialmente usada en productos electrónicos de consumo como telefonía móvil y reproductores de música mientras NAND Flash solid state disks(SSDs) están progresivamente desplazando a los dispositivos de disco duro como principal unidad de almacenamiento en computadoras portátiles, de escritorio e incluso en centros de datos. En la actualidad, hay varios factores que amenazan la actual predominancia de memorias semiconductoras basadas en cargas (capacitivas). Por un lado, se está alcanzando el límite de integración de las memorias Flash, lo que compromete su escalado en el medio plazo. Por otra parte, el fuerte incremento de las corrientes de fuga de los transistores de silicio CMOS actuales, supone un enorme desafío para la integración de memorias SRAM. Asimismo, estas memorias son cada vez más susceptibles a fallos de lectura/escritura en diseños de bajo consumo. Como resultado de estos problemas, que se agravan con cada nueva generación tecnológica, en los últimos años se han intensificado los esfuerzos para desarrollar nuevas tecnologías que reemplacen o al menos complementen a las actuales. Los transistores de efecto campo eléctrico ferroso (FeFET en sus siglas en inglés) se consideran una de las alternativas más prometedores para sustituir tanto a Flash (por su mayor densidad) como a DRAM (por su mayor velocidad), pero aún está en una fase muy inicial de su desarrollo. Hay otras tecnologías algo más maduras, en el ámbito de las memorias RAM resistivas, entre las que cabe destacar ReRAM (o RRAM), STT-RAM, Domain Wall Memory y Phase Change Memory (PRAM)...Depto. de Arquitectura de Computadores y AutomáticaFac. de InformáticaTRUEunpu