A Reconfigurable Gate Architecture for Si/SiGe Quantum Dots

We demonstrate a reconfigurable quantum dot gate architecture that incorporates two interchangeable transport channels. One channel is used to form quantum dots and the other is used for charge sensing. The quantum dot transport channel can support either a single or a double quantum dot. We demonstrate few-electron occupation in a single quantum dot and extract charging energies as large as 6.6 meV. Magnetospectroscopy is used to measure valley splittings in the range of 35-70 microeV. By energizing two additional gates we form a few-electron double quantum dot and demonstrate tunable tunnel coupling at the (1,0) to (0,1) interdot charge transition.Comment: Related papers at http://pettagroup.princeton.ed

Microwave spectroscopy on a double quantum dot with an on-chip Josephson oscillator

We present measurements on microwave spectroscopy on a double quantum dot with an on-chip microwave source. The quantum dots are realized in the two-dimensional electron gas of an AlGaAs/GaAs heterostructure and are weakly coupled in series by a tunnelling barrier forming an 'ionic' molecular state. We employ a Josephson oscillator formed by a long Nb/Al-AlO$_x$/Nb junction as a microwave source. We find photon-assisted tunnelling sidebands induced by the Josephson oscillator, and compare the results with those obtained using an externally operated microwave source.Comment: 6 pages, 4 figure

Capacitive crosstalk in gate-based dispersive sensing of spin qubits

In gate-based dispersive sensing, the response of a resonator attached to a quantum dot gate is detected by a reflected radio-frequency signal. This enables fast readout of spin qubits and tune up of arrays of quantum dots, but comes at the expense of increased susceptibility to crosstalk, as the resonator can amplify spurious signals and induce fluctuations in the quantum dot potential. We attach tank circuits with superconducting NbN inductors and internal quality factors $Q_{\mathrm{i}}$>1000 to the interdot barrier gate of silicon double quantum dot devices. Measuring the interdot transition in transport, we quantify radio-frequency crosstalk that results in a ring-up of the resonator when neighbouring plunger gates are driven with frequency components matching the resonator frequency. This effect complicates qubit operation and scales with the loaded quality factor of the resonator, the mutual capacitance between device gate electrodes, and with the inverse of the parasitic capacitance to ground. Setting qubit frequencies below the resonator frequency is expected to substantially suppress this type of crosstalk.Comment: 7 pages, 4 figures, supplementary informatio

Single-hole tunneling through a two-dimensional hole gas in intrinsic silicon

In this letter we report single-hole tunneling through a quantum dot in a two-dimensional hole gas, situated in a narrow-channel field-effect transistor in intrinsic silicon. Two layers of aluminum gate electrodes are defined on Si/SiO$_2$ using electron-beam lithography. Fabrication and subsequent electrical characterization of different devices yield reproducible results, such as typical MOSFET turn-on and pinch-off characteristics. Additionally, linear transport measurements at 4 K result in regularly spaced Coulomb oscillations, corresponding to single-hole tunneling through individual Coulomb islands. These Coulomb peaks are visible over a broad range in gate voltage, indicating very stable device operation. Energy spectroscopy measurements show closed Coulomb diamonds with single-hole charging energies of 5--10 meV, and lines of increased conductance as a result of resonant tunneling through additional available hole states.Comment: 4 pages, 4 figures. This article has been submitted to Applied Physics Letter

High-order cumulants in the counting statistics of asymmetric quantum dots

Measurements of single electron tunneling through a quantum dot using a quantum point contact as charge detector have been performed for very long time traces with very large event counts. This large statistical basis is used for a detailed examination of the counting statistics for varying symmetry of the quantum dot system. From the measured statistics we extract high order cumulants describing the distribution. Oscillations of the high order cumulants are observed when varying the symmetry. We compare this behavior to the observed oscillation in time dependence and show that the variation of both system variables lead to the same kind of oscillating response.Comment: 3 page