Importance sampling for thermally induced switching and non-switching probabilities in spin-torque magnetic nanodevices

Spin-transfer torque magnetoresistive random access memory is a potentially transformative technology in the non-volatile memory market. Its viability depends, in part, on one's ability to predictably induce or prevent switching; however, thermal fluctuations cause small but important errors in both the writing and reading processes. Computing these very small probabilities for magnetic nanodevices using naive Monte Carlo simulations is essentially impossible due to their slow statistical convergence, but variance reduction techniques can offer an effective way to improve their efficiency. Here, we provide an illustration of how importance sampling can be efficiently used to estimate low read and write soft error rates of macrospin and coupled-spin systems.Comment: 11 pages, 14 figure

All-optical control of ferromagnetic thin films and nanostructures

The interplay of light and magnetism has been a topic of interest since the original observations of Faraday and Kerr where magnetic materials affect the light polarization. While these effects have historically been exploited to use light as a probe of magnetic materials there is increasing research on using polarized light to alter or manipulate magnetism. For instance deterministic magnetic switching without any applied magnetic fields using laser pulses of the circular polarized light has been observed for specific ferrimagnetic materials. Here we demonstrate, for the first time, optical control of ferromagnetic materials ranging from magnetic thin films to multilayers and even granular films being explored for ultra-high-density magnetic recording. Our finding shows that optical control of magnetic materials is a much more general phenomenon than previously assumed. These results challenge the current theoretical understanding and will have a major impact on data memory and storage industries via the integration of optical control of ferromagnetic bits.Comment: 21 pages, 11 figure

Design of Adiabatic MTJ-CMOS Hybrid Circuits

Low-power designs are a necessity with the increasing demand of portable devices which are battery operated. In many of such devices the operational speed is not as important as battery life. Logic-in-memory structures using nano-devices and adiabatic designs are two methods to reduce the static and dynamic power consumption respectively. Magnetic tunnel junction (MTJ) is an emerging technology which has many advantages when used in logic-in-memory structures in conjunction with CMOS. In this paper, we introduce a novel adiabatic hybrid MTJ/CMOS structure which is used to design AND/NAND, XOR/XNOR and 1-bit full adder circuits. We simulate the designs using HSPICE with 32nm CMOS technology and compared it with a non-adiabatic hybrid MTJ/CMOS circuits. The proposed adiabatic MTJ/CMOS full adder design has more than 7 times lower power consumtion compared to the previous MTJ/CMOS full adder