Optical control of internal electric fields in band-gap graded InGaN nanowires

InGaN nanowires are suitable building blocks for many future optoelectronic devices. We show that a linear grading of the indium content along the nanowire axis from GaN to InN introduces an internal electric field evoking a photocurrent. Consistent with quantitative band structure simulations we observe a sign change in the measured photocurrent as a function of photon flux. This negative differential photocurrent opens the path to a new type of nanowire-based photodetector. We demonstrate that the photocurrent response of the nanowires is as fast as 1.5 ps

Ultrafast photocurrent measurement of the escape time of electrons and holes from carbon nanotube PN junction photodiodes

Ultrafast photocurrent measurements are performed on individual carbon nanotube PN junction photodiodes. The photocurrent response to sub-picosecond pulses separated by a variable time delay {\Delta}t shows strong photocurrent suppression when two pulses overlap ({\Delta}t = 0). The picosecond-scale decay time of photocurrent suppression scales inversely with the applied bias VSD, and is twice as long for photon energy above the second subband E22 as compared to lower energy. The observed photocurrent behavior is well described by an escape time model that accounts for carrier effective mass.Comment: 8 pages Main text, 4 Figure

Photocurrent Generation in a Metallic Transition Metal Dichalcogenide

Light induced current in two-dimensional (2D) layered materials emerges from mechanisms such as photothermoelectric effect, photovoltaic effect or nonlocal hot carrier transport. Semiconducting layered transition metal dichalcogenides have been studied extensively in recent years as the generation of current by light is a crucial process in optoelectronic and photovoltaic devices. However, photocurrent generation is unexpected in metallic 2D layered materials unless a photothermal mechanism is prevalent. Typically, high thermal conductivity and low absorption of the visible spectrum prevent photothermal current generation in metals. Here, we report photoresponse from two-terminal devices of mechanically exfoliated metallic 3R-NbS$_2$ thin crystals using scanning photocurrent microscopy (SPCM) both at zero and finite bias. SPCM measurements reveal that the photocurrent predominantly emerges from metal/NbS$_2$ junctions of the two-terminal device at zero bias. At finite biases, along with the photocurrent generated at metal/NbS$_2$ junctions, now a negative photoresponse from all over the NbS$_2$ crystal is evident. Among our results, we realized that the observed photocurrent can be explained by the local heating caused by the laser excitation. These findings show that NbS$_2$ is among a few metallic materials in which photocurrent generation is possible

Enhanced Photodetection in Graphene-Integrated Photonic Crystal Cavity

We demonstrate the controlled enhancement of photoresponsivity in a graphene photodetector by coupling to slow light modes in a long photonic crystal linear defect cavity. Near the Brillouin zone (BZ) boundary, spectral coupling of multiple cavity modes results in broad-band photocurrent enhancement from 1530 nm to 1540 nm. Away from the BZ boundary, individual cavity resonances enhance the photocurrent eight-fold in narrow resonant peaks. Optimization of the photocurrent via critical coupling of the incident field with the graphene-cavity system is discussed. The enhanced photocurrent demonstrates the feasibility of a wavelength-scale graphene photodetector for efficient photodetection with high spectral selectivity and broadband response

Optical quenching and recovery of photoconductivity in single-crystal diamond

We study the photocurrent induced by pulsed-light illumination (pulse duration is several nanoseconds) of single-crystal diamond containing nitrogen impurities. Application of additional continuous-wave light of the same wavelength quenches pulsed photocurrent. Characterization of the optically quenched photocurrent and its recovery is important for the development of diamond based electronics and sensing

Spin photocurrent, its spectra dependence, and current-induced spin polarization in an InGaAs/InAlAs two-dimensional electron gas

Converse effect of spin photocurrent and current induced spin polarization are experimentally demonstrated in the same two-dimensional electron gas system with Rashba spin splitting. Their consistency with the strength of the Rashba coupling as measured from beating of the Shubnikov-de Haas oscillations reveals a unified picture for the spin photocurrent, current-induced spin polarization and spin orbit coupling. In addition, the observed spectral inversion of the spin photocurrent indicates the system with dominating structure inversion asymmetry.Comment: 13 pages, 4 figure

Theory of magnetoelectric photocurrent generated by direct interband transitions in semiconductor quantum well

A linearly polarized light normally incident on a semiconductor quantum well with spin-orbit coupling may generate pure spin current via direct interband optical transition. An electric photocurrent can be extracted from the pure spin current when an in-plane magnetic field is applied, which has been recently observed in the InGaAs/InAlAs quantum well [Dai et al., Phys. Rev. Lett. 104, 246601 (2010)]. Here we present a theoretical study of this magnetoelectric photocurrent effect associated with the interband transition. By employing the density matrix formalism, we show that the photoexcited carrier density has an anisotropic distribution in k space, strongly dependent on the orientation of the electron wavevector and the polarization of the light. This anisotropy provides an intuitive picture of the observed dependence of the photocurrent on the magnetic field and the polarization of the light. We also show that the ratio of the pure spin photocurrent to the magnetoelectric photocurrent is approximately equal to the ratio of the kinetic energy to the Zeeman energy, which enables us to estimate the magnitude of the pure spin photocurrent. The photocurrent density calculated with the help of an anisotropic Rashba model and the Kohn-Luttinger model can produce all three terms in the fitting formula for measured current, with comparable order of magnitude, but discrepancies are still present and further investigation is needed.Comment: 13 pages, 9 figures, 2 table

Cyclotron Resonance Assisted Photocurrents in Surface States of a 3D Topological Insulator Based on a Strained High Mobility HgTe Film

We report on the observation of cyclotron resonance induced photocurrents, excited by continuous wave terahertz radiation, in a 3D topological insulator (TI) based on an 80 nm strained HgTe film. The analysis of the photocurrent formation is supported by complimentary measurements of magneto-transport and radiation transmission. We demonstrate that the photocurrent is generated in the topologically protected surface states. Studying the resonance response in a gated sample we examined the behavior of the photocurrent, which enables us to extract the mobility and the cyclotron mass as a function of the Fermi energy. For high gate voltages we also detected cyclotron resonance (CR) of bulk carriers, with a mass about two times larger than that obtained for the surface states. The origin of the CR assisted photocurrent is discussed in terms of asymmetric scattering of TI surface carriers in the momentum space. Furthermore, we show that studying the photocurrent in gated samples provides a sensitive method to probe the effective masses and the mobility of 2D Dirac surface states, when the Fermi level lies in the bulk energy gap or even in the conduction band