Production of carbon nanotubes by PECVD and their applications to supercapacitors

Màster en Nanociència i NanotecnologiaPlasma enhanced chemical vapor deposition (PECVD) is a versatile technique to obtain vertically dense-aligned carbon nanotubes (CNTs) at lower temperatures than chemical vapor deposition (CVD). In this work, we used magnetron sputtering to deposit iron layer as a catalyst on silicon wafers. After that, radio frequency (rf) assisted PECVD reactor was used to grow CNTs. They were treated with water plasma and finally covered by MnO2 as dielectric layer in order to use CNTs as electrode for supercapacitors. Optimization of annealing time, reaction time and temperature, water plasma time and MnO2 deposition time were performed to find appropriate conditions to improve the characteristics of supercapacitors. SEM (Scanning Electron Microscopy), TEM (Transmission Electron Microscopy), AFM (Atomic Force Microscopy) and Raman spectroscopy were used to characterize obtained electrodes

Self-aligned 0-level sealing of MEMS devices by a two layer thin film reflow process

Many micro electromechanical systems (MEMS) require a vacuum or controlled atmosphere encapsulation in order to ensure either a good performance or an acceptable lifetime of operation. Two approaches for wafer-scale zero-level packaging exist. The most popular approach is based on wafer bonding. Alternatively, encapsulation can be done by the fabrication and sealing of perforated surface micromachined membranes. In this paper, a sealing method is proposed for zero-level packaging using a thin film reflow technique. This sealing method can be done at arbitrary ambient and pressure. Also, it is self-aligned and it can be used for sealing openings directly above the MEMS device. It thus allows for a smaller die area for the sealing ring reducing in this way the device dimensions and costs. The sealing method has been demonstrated with reflowed aluminium, germanium, and boron phosphorous silica glass. This allows for conducting as well as non-conducting sealing layers and for a variety of allowable thermal budgets. The proposed technique is therefore very versatile

Nanostructure and paramagnetic centres in diamond-like carbon: Effect of Ar dilution in PECVD process

Diamond-like carbon (DLC) films were deposited utilising plasma enhanced chemical vapour deposition (PECVD) with acetylene precursor, diluted with 0 – 45% argon. Electron paramagnetic resonance (EPR) measurements show the presence of one paramagnetic centre with no change in spin population over the range of film deposition conditions. However, the EPR linewidth decreases with increasing argon content of the precursor mix, suggesting an enhancement of motional narrowing due to an increase in electron delocalization, related to an increase in the sp2 cluster size. Atomic force microscopy (AFM) measurements indicate the surface of the DLC is formed of nanoscale asperities of material. With radii of tens of nanometres for films deposited with zero argon, the size of the features increases with the argon dilution of the acetylene. Energy dispersive x-ray analysis and electrical measurements further elucidate the changes in film structure

Influence of interface potential on the effective mass in Ge nanostructures

The role of the interface potential on the effective mass of charge carriers is elucidated in this work. We develop a new theoretical formalism using a spatially dependent effective mass that is related to the magnitude of the interface potential. Using this formalism we studied Ge quantum dots (QDs) formed by plasma enhanced chemical vapour deposition (PECVD) and co-sputtering (sputter). These samples allowed us to isolate important consequences arising from differences in the interface potential. We found that for a higher interface potential, as in the case of PECVD QDs, there is a larger reduction in the effective mass, which increases the confinement energy with respect to the sputter sample. We further understood the action of O interface states by comparing our results with Ge QDs grown by molecular beam epitaxy. It is found that the O states can suppress the influence of the interface potential. From our theoretical formalism we determine the length scale over which the interface potential influences the effective mass

Characterization of PECVD Silicon Nitride Photonic Components at 532 and 900 nm Wavelength

Low temperature PECVD silicon nitride photonic waveguides have been fabricated by both electron beam lithography and 200 mm DUV lithography. Propagation losses and bend losses were both measured at 532 and 900 nm wavelength, revealing sub 1dB/cm propagation losses for cladded waveguides at both wavelengths for single mode operation. Without cladding, propagation losses were measured to be in the 1-3 dB range for 532 nm and remain below 1 dB/cm for 900 nm for single mode waveguides. Bend losses were measured for 532 nm and were well below 0.1 dB per 90 degree bend for radii larger than 10 mu m

Nanomechanical optical devices fabricated with aligned wafer bonding

This paper reports on a new method for making some types of integrated optical nanomechanical devices. Intensity modulators as well as phase modulators were fabricated using several silicon micromachining techniques, including chemical mechanical polishing and aligned wafer bonding. This new method enables batch fabrication of the nanomechanical optical devices, and enhances their performance

Modulation of the high mobility two-dimensional electrons in Si/SiGe using atomic-layer-deposited gate dielectric

Metal-oxide-semiconductor field-effect transistors (MOSFET's) using atomic-layer-deposited (ALD) Al$_2$O$_3$ as the gate dielectric are fabricated on the Si/Si$_{1-x}$Ge$_x$ heterostructures. The low-temperature carrier density of a two-dimensional electron system (2DES) in the strained Si quantum well can be controllably tuned from 2.5$\times10^{11}$cm$^{-2}$ to 4.5$\times10^{11}$cm$^{-2}$, virtually without any gate leakage current. Magnetotransport data show the homogeneous depletion of 2DES under gate biases. The characteristic of vertical modulation using ALD dielectric is shown to be better than that using Schottky barrier or the SiO$_2$ dielectric formed by plasma-enhanced chemical-vapor-deposition(PECVD).Comment: 3 pages Revtex4, 4 figure