15,553 research outputs found

    Energetic disorder at the metal/organic semiconductor interface

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    The physics of organic semiconductors is dominated by the effects of energetic disorder. We show that image forces reduce the electrostatic component of the total energetic disorder near an interface with a metal electrode. Typically, the variance of energetic disorder is dramatically reduced at the first few layers of organic semiconductor molecules adjacent to the metal electrode. Implications for charge injection into organic semiconductors are discussed.Comment: 9 pages, 2 figure

    Transient localization in crystalline organic semiconductors

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    A relation derived from the Kubo formula shows that optical conductivity measurements below the gap frequency in doped semiconductors can be used to probe directly the time-dependent quantum dynamics of charge carriers. This allows to extract fundamental quantities such as the elastic and inelastic scattering rates, as well as the localization length in disordered systems. When applied to crystalline organic semiconductors, an incipient electron localization caused by large dynamical lattice disorder is unveiled, implying a breakdown of semiclassical transport.Comment: Revised version, to appear in Phys. Rev. B Rapid Communication

    Hyperfine interaction and magnetoresistance in organic semiconductors

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    We explore the possibility that hyperfine interaction causes the recently discovered organic magnetoresistance (OMAR) effect. Our study employs both experiment and theoretical modelling. An excitonic pair mechanism model based on hyperfine interaction, previously suggested by others to explain magnetic field effects in organics, is examined. Whereas this model can explain a few key aspects of the experimental data, we, however, uncover several fundamental contradictions as well. By varying the injection efficiency for minority carriers in the devices, we show experimentally that OMAR is only weakly dependent on the ratio between excitons formed and carriers injected, likely excluding any excitonic effect as the origin of OMAR.Comment: 10 pages, 7 figures, 1 tabl

    Quantum coherence and carriers mobility in organic semiconductors

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    We present a model of charge transport in organic molecular semiconductors based on the effects of lattice fluctuations on the quantum coherence of the electronic state of the charge carrier. Thermal intermolecular phonons and librations tend to localize pure coherent states and to assist the motion of less coherent ones. Decoherence is thus the primary mechanism by which conduction occurs. It is driven by the coupling of the carrier to the molecular lattice through polarization and transfer integral fluctuations as described by the hamiltonian of Gosar and Choi. Localization effects in the quantum coherent regime are modeled via the Anderson hamiltonian with correlated diagonal and non-diagonal disorder leading to the determination of the carrier localization length. This length defines the coherent extension of the ground state and determines, in turn, the diffusion range in the incoherent regime and thus the mobility. The transfer integral disorder of Troisi and Orlandi can also be incorporated. This model, based on the idea of decoherence, allowed us to predict the value and temperature dependence of the carrier mobility in prototypical organic semiconductors that are in qualitative accord with experiments

    Measuring Energetic Disorder in Organic Semiconductors Using the Photogenerated Charge-Separation Efficiency

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    Understanding and quantifying energetic disorder in organic semiconductors continues to attract attention because of its significant impact on the transport physics of these technologically important materials. Here, we show that the energetic disorder of organic semiconductors can be determined from the relationship between the internal quantum efficiency of charge generation and the frequency of the incident light. Our results for a number of materials suggest that energetic disorder in organic semiconductors could be larger than previously reported, and we advance ideas as to why this may be the case
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