2,304 research outputs found
Correcting Charge-Constrained Errors in the Rank-Modulation Scheme
We investigate error-correcting codes for a the
rank-modulation scheme with an application to flash memory
devices. In this scheme, a set of n cells stores information in the
permutation induced by the different charge levels of the individual
cells. The resulting scheme eliminates the need for discrete
cell levels, overcomes overshoot errors when programming cells (a
serious problem that reduces the writing speed), and mitigates the
problem of asymmetric errors. In this paper, we study the properties
of error-correcting codes for charge-constrained errors in the
rank-modulation scheme. In this error model the number of errors
corresponds to the minimal number of adjacent transpositions required
to change a given stored permutation to another erroneous
one—a distance measure known as Kendall’s τ-distance.We show
bounds on the size of such codes, and use metric-embedding techniques
to give constructions which translate a wealth of knowledge
of codes in the Lee metric to codes over permutations in Kendall’s
τ-metric. Specifically, the one-error-correcting codes we construct
are at least half the ball-packing upper bound
Systematic Error-Correcting Codes for Rank Modulation
The rank-modulation scheme has been recently proposed for efficiently storing
data in nonvolatile memories. Error-correcting codes are essential for rank
modulation, however, existing results have been limited. In this work we
explore a new approach, \emph{systematic error-correcting codes for rank
modulation}. Systematic codes have the benefits of enabling efficient
information retrieval and potentially supporting more efficient encoding and
decoding procedures. We study systematic codes for rank modulation under
Kendall's -metric as well as under the -metric.
In Kendall's -metric we present -systematic codes for
correcting one error, which have optimal rates, unless systematic perfect codes
exist. We also study the design of multi-error-correcting codes, and provide
two explicit constructions, one resulting in systematic codes
with redundancy at most . We use non-constructive arguments to show the
existence of -systematic codes for general parameters. Furthermore,
we prove that for rank modulation, systematic codes achieve the same capacity
as general error-correcting codes.
Finally, in the -metric we construct two systematic
multi-error-correcting codes, the first for the case of , and the
second for . In the latter case, the codes have the same
asymptotic rate as the best codes currently known in this metric
New Bounds for Permutation Codes in Ulam Metric
New bounds on the cardinality of permutation codes equipped with the Ulam
distance are presented. First, an integer-programming upper bound is derived,
which improves on the Singleton-type upper bound in the literature for some
lengths. Second, several probabilistic lower bounds are developed, which
improve on the known lower bounds for large minimum distances. The results of a
computer search for permutation codes are also presented.Comment: To be presented at ISIT 2015, 5 page
Error-Correction in Flash Memories via Codes in the Ulam Metric
We consider rank modulation codes for flash memories that allow for handling
arbitrary charge-drop errors. Unlike classical rank modulation codes used for
correcting errors that manifest themselves as swaps of two adjacently ranked
elements, the proposed \emph{translocation rank codes} account for more general
forms of errors that arise in storage systems. Translocations represent a
natural extension of the notion of adjacent transpositions and as such may be
analyzed using related concepts in combinatorics and rank modulation coding.
Our results include derivation of the asymptotic capacity of translocation rank
codes, construction techniques for asymptotically good codes, as well as simple
decoding methods for one class of constructed codes. As part of our exposition,
we also highlight the close connections between the new code family and
permutations with short common subsequences, deletion and insertion
error-correcting codes for permutations, and permutation codes in the Hamming
distance
Generalized Gray Codes for Local Rank Modulation
We consider the local rank-modulation scheme in which a sliding window going
over a sequence of real-valued variables induces a sequence of permutations.
Local rank-modulation is a generalization of the rank-modulation scheme, which
has been recently suggested as a way of storing information in flash memory. We
study Gray codes for the local rank-modulation scheme in order to simulate
conventional multi-level flash cells while retaining the benefits of rank
modulation. Unlike the limited scope of previous works, we consider code
constructions for the entire range of parameters including the code length,
sliding window size, and overlap between adjacent windows. We show our
constructed codes have asymptotically-optimal rate. We also provide efficient
encoding, decoding, and next-state algorithms.Comment: 7 pages, 1 figure, shorter version was submitted to ISIT 201
Compressed Encoding for Rank Modulation
Rank modulation has been recently proposed as
a scheme for storing information in flash memories. While
rank modulation has advantages in improving write speed and
endurance, the current encoding approach is based on the "push
to the top" operation that is not efficient in the general case. We
propose a new encoding procedure where a cell level is raised to
be higher than the minimal necessary subset -instead of all - of
the other cell levels. This new procedure leads to a significantly
more compressed (lower charge levels) encoding. We derive an
upper bound for a family of codes that utilize the proposed
encoding procedure, and consider code constructions that achieve
that bound for several special cases
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