An Octave-Range, Watt-Level, Fully-Integrated CMOS Switching Power Mixer Array for Linearization and Back-Off-Efficiency Improvement

The power mixer array is presented as a novel power generation approach for non-constant envelope signals. It comprises several power mixer units that are dynamically turned on and off to improve the linearity and back-off efficiency. At the circuit level, the power mixer unit can operate as a switching amplifier to achieve high peak power efficiency. Additional circuit level linearization and back-off efficiency improvement techniques are also proposed. To demonstrate the feasibility of this idea, a fully-integrated octave-range CMOS power mixer array is implemented in a 130 nm CMOS process. It is operational between 1.2 GHz and 2.4 GHz and can generate an output power of +31.3 dBm into an external 50 Ω load with a PAE of 42% and a gain compression of only 0.4 dB at 1.8 GHz. It achieves a PAE of 25%, at an average output power of +26.4 dBm, and an EVM of 4.6% with a non-constant-envelope 16 QAM signal. It can also produce arbitrary signal levels down to -70 dBm of output power with the 16 QAM-modulated signal without any RF gain control circuit

European White Book on Real-Time Power Hardware in the Loop Testing : DERlab Report No. R- 005.0

The European White Book on Real-Time-Powerhardware-in-the-Loop testing is intended to serve as a reference document on the future of testing of electrical power equipment, with specifi c focus on the emerging hardware-in-the-loop activities and application thereof within testing facilities and procedures. It will provide an outlook of how this powerful tool can be utilised to support the development, testing and validation of specifi cally DER equipment. It aims to report on international experience gained thus far and provides case studies on developments and specifi c technical issues, such as the hardware/software interface. This white book compliments the already existing series of DERlab European white books, covering topics such as grid-inverters and grid-connected storag

Novel active function blocks and their applications in frequency filters and quadrature oscillators

Kmitočtové filtry a sinusoidní oscilátory jsou lineární elektronické obvody, které jsou používány v široké oblasti elektroniky a jsou základními stavebními bloky v analogovém zpracování signálu. V poslední dekádě pro tento účel bylo prezentováno velké množství stavebních funkčních bloků. V letech 2000 a 2006 na Ústavu telekomunikací, VUT v Brně byly definovány univerzální proudový konvejor (UCC) a univerzální napět'ový konvejor (UVC) a vyrobeny ve spolupráci s firmou AMI Semiconductor Czech, Ltd. Ovšem, stále existuje požadavek na vývoj nových aktivních prvků, které nabízejí nové výhody. Hlavní přínos práce proto spočívá v definici dalších původních aktivních stavebních bloků jako jsou differential-input buffered and transconductance amplifier (DBTA), current follower transconductance amplifier (CFTA), z-copy current-controlled current inverting transconductance amplifier (ZC-CCCITA), generalized current follower differential input transconductance amplifier (GCFDITA), voltage gain-controlled modified current-feedback operational amplifier (VGC-MCFOA), a minus-type current-controlled third-generation voltage conveyor (CC-VCIII-). Pomocí navržených aktivních stavebních bloků byly prezentovány původní zapojení fázovacích článků prvního řádu, univerzální filtry druhého řádu, ekvivalenty obvodu typu KHN, inverzní filtry, aktivní simulátory uzemněného induktoru a kvadraturní sinusoidní oscilátory pracující v proudovém, napět'ovém a smíšeném módu. Chování navržených obvodů byla ověřena simulací v prostředí SPICE a ve vybraných případech experimentálním měřením.Frequency filters and sinusoidal oscillators are linear electric circuits that are used in wide area of electronics and also are the basic building blocks in analogue signal processing. In the last decade, huge number of active building blocks (ABBs) were presented for this purpose. In 2000 and 2006, the universal current conveyor (UCC) and the universal voltage conveyor (UVC), respectively, were designed at the Department of Telecommunication, BUT, Brno, and produced in cooperation with AMI Semiconductor Czech, Ltd. There is still the need to develop new active elements that offer new advantages. The main contribution of this thesis is, therefore, the definition of other novel ABBs such as the differential-input buffered and transconductance amplifier (DBTA), the current follower transconductance amplifier (CFTA), the z-copy current-controlled current inverting transconductance amplifier (ZC-CCCITA), the generalized current follower differential input transconductance amplifier (GCFDITA), the voltage gain-controlled modified current-feedback operational amplifier (VGC-MCFOA), and the minus-type current-controlled third-generation voltage conveyor (CC-VCIII-). Using the proposed ABBs, novel structures of first-order all-pass filters, second-order universal filters, KHN-equivalent circuits, inverse filters, active grounded inductance simulators, and quadrature sinusoidal oscillators working in the current-, voltage-, or mixed-mode are presented. The behavior of the proposed circuits has been verified by SPICE simulations and in selected cases also by experimental measurements.

Novel Floating General Element Simulators Using CBTA

In this study, a novel floating frequency dependent negative resistor (FDNR), floating inductor, floating capacitor and floating resistor simulator circuit employing two CBTAs and three passive components is proposed. The presented circuit can realize floating FDNR, inductor, capacitor or resistor depending on the passive component selection. Since the passive elements are all grounded, this circuit is suitable for fully integrated circuit design. The circuit does not require any component matching conditions, and it has a good sensitivity performance with respect to tracking errors. Moreover, the proposed FDNR, inductance, capacitor and resistor simulator can be tuned electronically by changing the biasing current of the CBTA or can be controlled through the grounded resistor or capacitor. The high-order frequency dependent element simulator circuit is also presented. Depending on the passive component selection, it realizes high-order floating circuit defining as V(s) = snAI(s) or V(s) = s-nBI(s). The proposed floating FDNR simulator circuit and floating high-order frequency dependent element simulator circuit are demonstrated by using PSPICE simulation for 0.25 μm, level 7, TSMC CMOS technology parameters

Energy Efficient RF Transmitter Design using Enhanced Breakdown Voltage SOI-CMOS Compatible MESFETs

abstract: The high cut-off frequency of deep sub-micron CMOS technologies has enabled the integration of radio frequency (RF) transceivers with digital circuits. However, the challenging point is the integration of RF power amplifiers, mainly due to the low breakdown voltage of CMOS transistors. Silicon-on-insulator (SOI) metal semiconductor field effect transistors (MESFETs) have been introduced to remedy the limited headroom concern in CMOS technologies. The MESFETs presented in this thesis have been fabricated on different SOI-CMOS processes without making any change to the standard fabrication steps and offer 2-30 times higher breakdown voltage than the MOSFETs on the same process. This thesis explains the design steps of high efficiency and wideband RF transmitters using the proposed SOI-CMOS compatible MESFETs. This task involves DC and RF characterization of MESFET devices, along with providing a compact Spice model for simulation purposes. This thesis presents the design of several SOI-MESFET RF power amplifiers operating at 433, 900 and 1800 MHz with ~40% bandwidth. Measurement results show a peak power added efficiency (PAE) of 55% and a peak output power of 22.5 dBm. The RF-PAs were designed to operate in Class-AB mode to minimize the linearity degradation. Class-AB power amplifiers lead to poor power added efficiency, especially when fed with signals with high peak to average power ratio (PAPR) such as wideband code division multiple access (W-CDMA). Polar transmitters have been introduced to improve the efficiency of RF-PAs at backed-off powers. A MESFET based envelope tracking (ET) polar transmitter was designed and measured. A low drop-out voltage regulator (LDO) was used as the supply modulator of this polar transmitter. MESFETs are depletion mode devices; therefore, they can be configured in a source follower configuration to have better stability and higher bandwidth that MOSFET based LDOs. Measurement results show 350 MHz bandwidth while driving a 10 pF capacitive load. A novel polar transmitter is introduced in this thesis to alleviate some of the limitations associated with polar transmitters. The proposed architecture uses the backgate terminal of a partially depleted transistor on SOI process, which relaxes the bandwidth and efficiency requirements of the envelope amplifier in a polar transmitter. The measurement results of the proposed transmitter demonstrate more than three times PAE improvement at 6-dB backed-off output power, compared to the traditional RF transmitters.Dissertation/ThesisPh.D. Electrical Engineering 201

Multilevel Power Supply for High Efficiency RF Amplifiers

In radio systems linear power amplifiers (class A, B or AB) are usually used as a solution for the power amplifier stage. These amplifiers have high linearity, but suffer from low efficiency when the transmitted signal has low peak-to-average power ratio. The Kahn envelope elimination and restoration (EER) technique is used to enhance efficiency of RF transmitters, by combining highly efficient, nonlinear RF amplifier (class D or E) with a highly efficient envelope amplifier in order to obtain linear and highly efficient RF amplifier. This paper presents a solution for the envelope amplifier based on a combination of multilevel converter and linear regulator. The proposed solution can reproduce any signal with maximal spectral component of 2 MHz and give instantaneous maximal power of 50 W. The efficiency measurements show that when the signals with low average value are transmitted, it has up to 15% higher efficiency than linear regulator that is used as a conventional solution. Additionally, the algorithm for selection of voltage levels for the multilevel converter is explained, as well

Envelope Amplifier for RF Amplifier based on Multilevel Converter

Modern transmitters usually have to amplify and transmit signals with simultaneous envelope and phase modulation. Due to this property of the transmitted signal, linear power amplifiers (class A, B or AB) are usually used as a solution for the power amplifier stage. These amplifiers have high linearity, but suffer from low efficiency when the transmitted signal has low peakto-average power ratio. The Kahn envelope elimination and restoration (EER) technique is used to enhance efficiency of RF transmitters, by combining highly efficient, nonlinear RF amplifier (class D or E) with a highly efficient envelope amplifier in order to obtain linear and highly efficient RF amplifierThis paper presents a solution for the envelope amplifier based on a combination of multilevel converter and linear regulator. The proposed solution can reproduce any signal with maximal spectral component of 2 MHz and give instantaneous maximal power of 50 W. The efficiency measurements show that when the signals with low average value are transmitted, it has up to 15% higher efficiency than linear regulator that is used as a conventional solution. Additionally, the algorithm for selection of voltage levels for the multilevel converter is explained, as wel