Programmable Logic Circuits based on Ambipolar CNFET

Recently, it was demonstrated that the polarity of carbon nanotube field effect transistors can be electrically controlled. In this paper we show how Programmable Logic Arrays (PLA) can be built out of these devices, and we illustrate how they outperform usual PLA by internal signal inversion. The simulations show an area saving up to approximately 21% and decrease of the delay in PLA-based FPGA by 50%. We also show that this architecture is suitable for high-performance design tools and defect-tolerance approaches

An Efficient Gate Library for Ambipolar CNTFET Logic

Recently, several emerging technologies have been reported as potential candidates for controllable ambipolar devices. Controllable ambipolarity is a desirable property that enables the on-line configurability of n-type and p-type device polarity. In this paper, we introduce a new design methodology for logic gates based on controllable ambipolar devices, with an emphasis on carbon nanotubes as the candidate technology. Our technique results in ambipolar gates with a higher expressive power than conventional complementary metal-oxidesemiconductor (CMOS) libraries. We propose a library of static ambipolar carbon nanotube field effect transistor (CNTFET) gates based on generalized NOR-NAND-AOI-OAI primitives, which efficiently implements XOR-based functions. Technology mapping of several multi-level logic benchmarks that extensively use the XOR function, including multipliers, adders, and linear circuits, with ambipolar CNTFET logic gates indicates that on average, it is possible to reduce the number of logic levels by 42%, the delay by 26%, and the power consumption by 32%, resulting in a energy-delay-product (EDP) reduction of 59% over the same circuits mapped with unipolar CNTFET logic gates. Based on the projections in [1], where it is stated that defectfree CNTFETs will provide a 5× performance improvement over metal-oxide-semiconductor field effect transistors, the ambipolar library provides a performance improvement of 7×, a 57% reduction in power consumption, and a 20× improvement in EDP over the CMOS library

Design, Analysis and Test of Logic Circuits under Uncertainty.

Integrated circuits are increasingly susceptible to uncertainty caused by soft errors, inherently probabilistic devices, and manufacturing variability. As device technologies scale, these effects become detrimental to circuit reliability. In order to address this, we develop methods for analyzing, designing, and testing circuits subject to probabilistic effects. Our main contributions are: 1) a fast, soft-error rate (SER) analyzer that uses functional-simulation signatures to capture error effects, 2) novel design techniques that improve reliability using little area and performance overhead, 3) a matrix-based reliability-analysis framework that captures many types of probabilistic faults, and 4) test-generation/compaction methods aimed at probabilistic faults in logic circuits. SER analysis must account for the main error-masking mechanisms in ICs: logic, timing, and electrical masking. We relate logic masking to node testability of the circuit and utilize functional-simulation signatures, i.e., partial truth tables, to efficiently compute estability (signal probability and observability). To account for timing masking, we compute error-latching windows (ELWs) from timing analysis information. Electrical masking is incorporated into our estimates through derating factors for gate error probabilities. The SER of a circuit is computed by combining the effects of all three masking mechanisms within our SER analyzer called AnSER. Using AnSER, we develop several low-overhead techniques that increase reliability, including: 1) an SER-aware design method that uses redundancy already present within the circuit, 2) a technique that resynthesizes small logic windows to improve area and reliability, and 3) a post-placement gate-relocation technique that increases timing masking by decreasing ELWs. We develop the probabilistic transfer matrix (PTM) modeling framework to analyze effects beyond soft errors. PTMs are compressed into algebraic decision diagrams (ADDs) to improve computational efficiency. Several ADD algorithms are developed to extract reliability and error susceptibility information from PTMs representing circuits. We propose new algorithms for circuit testing under probabilistic faults, which require a reformulation of existing test techniques. For instance, a test vector may need to be repeated many times to detect a fault. Also, different vectors detect the same fault with different probabilities. We develop test generation methods that account for these differences, and integer linear programming (ILP) formulations to optimize test sets.Ph.D.Computer Science & EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/61584/1/smita_1.pd

Multiple-Independent-Gate Field-Effect Transistors for High Computational Density and Low Power Consumption

Transistors are the fundamental elements in Integrated Circuits (IC). The development of transistors significantly improves the circuit performance. Numerous technology innovations have been adopted to maintain the continuous scaling down of transistors. With all these innovations and efforts, the transistor size is approaching the natural limitations of materials in the near future. The circuits are expected to compute in a more efficient way. From this perspective, new device concepts are desirable to exploit additional functionality. On the other hand, with the continuously increased device density on the chips, reducing the power consumption has become a key concern in IC design. To overcome the limitations of Complementary Metal-Oxide-Semiconductor (CMOS) technology in computing efficiency and power reduction, this thesis introduces the multiple- independent-gate Field-Effect Transistors (FETs) with silicon nanowires and FinFET structures. The device not only has the capability of polarity control, but also provides dual-threshold- voltage and steep-subthreshold-slope operations for power reduction in circuit design. By independently modulating the Schottky junctions between metallic source/drain and semiconductor channel, the dual-threshold-voltage characteristics with controllable polarity are achieved in a single device. This property is demonstrated in both experiments and simulations. Thanks to the compact implementation of logic functions, circuit-level benchmarking shows promising performance with a configurable dual-threshold-voltage physical design, which is suitable for low-power applications. This thesis also experimentally demonstrates the steep-subthreshold-slope operation in the multiple-independent-gate FETs. Based on a positive feedback induced by weak impact ionization, the measured characteristics of the device achieve a steep subthreshold slope of 6 mV/dec over 5 decades of current. High Ion/Ioff ratio and low leakage current are also simultaneously obtained with a good reliability. Based on a physical analysis of the device operation, feasible improvements are suggested to further enhance the performance. A physics-based surface potential and drain current model is also derived for the polarity-controllable Silicon Nanowire FETs (SiNWFETs). By solving the carrier transport at Schottky junctions and in the channel, the core model captures the operation with independent gate control. It can serve as the core framework for developing a complete compact model by integrating advanced physical effects. To summarize, multiple-independent-gate SiNWFETs and FinFETs are extensively studied in terms of fabrication, modeling, and simulation. The proposed device concept expands the family of polarity-controllable FETs. In addition to the enhanced logic functionality, the polarity-controllable SiNWFETs and FinFETs with the dual-threshold-voltage and steep-subthreshold-slope operation can be promising candidates for future IC design towards low-power applications