193 research outputs found
XNOR-VSH: A Valley-Spin Hall Effect-based Compact and Energy-Efficient Synaptic Crossbar Array for Binary Neural Networks
Binary neural networks (BNNs) have shown an immense promise for
resource-constrained edge artificial intelligence (AI) platforms as their
binarized weights and inputs can significantly reduce the compute, storage and
communication costs. Several works have explored XNOR-based BNNs using SRAMs
and nonvolatile memories (NVMs). However, these designs typically need two
bit-cells to encode signed weights leading to an area overhead. In this paper,
we address this issue by proposing a compact and low power in-memory computing
(IMC) of XNOR-based dot products featuring signed weight encoding in a single
bit-cell. Our approach utilizes valley-spin Hall (VSH) effect in monolayer
tungsten di-selenide to design an XNOR bit-cell (named 'XNOR-VSH') with
differential storage and access-transistor-less topology. We co-optimize the
proposed VSH device and a memory array to enable robust in-memory dot product
computations between signed binary inputs and signed binary weights with sense
margin (SM) > 1 micro-amps. Our results show that the proposed XNOR-VSH array
achieves 4.8% ~ 9.0% and 37% ~ 63% lower IMC latency and energy, respectively,
with 4 % ~ 64% smaller area compared to spin-transfer-torque (STT)-MRAM and
spin-orbit-torque (SOT)-MRAM based XNOR-arrays
The Fourth Element: Characteristics, Modelling, and Electromagnetic Theory of the Memristor
In 2008, researchers at HP Labs published a paper in {\it Nature} reporting
the realisation of a new basic circuit element that completes the missing link
between charge and flux-linkage, which was postulated by Leon Chua in 1971. The
HP memristor is based on a nanometer scale TiO thin-film, containing a
doped region and an undoped region. Further to proposed applications of
memristors in artificial biological systems and nonvolatile RAM (NVRAM), they
also enable reconfigurable nanoelectronics. Moreover, memristors provide new
paradigms in application specific integrated circuits (ASICs) and field
programmable gate arrays (FPGAs). A significant reduction in area with an
unprecedented memory capacity and device density are the potential advantages
of memristors for Integrated Circuits (ICs). This work reviews the memristor
and provides mathematical and SPICE models for memristors. Insight into the
memristor device is given via recalling the quasi-static expansion of Maxwell's
equations. We also review Chua's arguments based on electromagnetic theory.Comment: 28 pages, 14 figures, Accepted as a regular paper - the Proceedings
of Royal Society
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