Non-Stationary Polar Codes for Resistive Memories

Resistive memories are considered a promising memory technology enabling high storage densities with in-memory computing capabilities. However, the readout reliability of resistive memories is impaired due to the inevitable existence of wire resistance, resulting in the sneak path problem. Motivated by this problem, we study polar coding over channels with different reliability levels, termed non-stationary polar codes, and we propose a technique improving its bit error rate (BER) performance. We then apply the framework of non-stationary polar codes to the crossbar array and evaluate its BER performance under two modeling approaches, namely binary symmetric channels (BSCs) and binary asymmetric channels (BSCs). Finally, we propose a technique for biasing the proportion of high-resistance states in the crossbar array and show its advantage in reducing further the BER. Several simulations are carried out using a SPICE-like simulator, exhibiting significant reduction in BER

Variability-Aware Read and Write Channel Models for 1S1R Crossbar Resistive Memory with High Wordline/Bitline Resistance

Crossbar resistive memory with 1 Selector 1 Resistor (1S1R) structure is attractive for low-cost and high-density nonvolatile memory applications. As technology scales down to the single-nm regime, the increasing resistivity of wordline/bitline becomes a limiting factor to device reliability. This paper presents write/read communication channels while considering the line resistance and device variabilities by statistically relating the degraded write/read margins and the channel parameters. Binary asymmetric channel (BAC) models are proposed for the write/read operations and array capacity results are presented. Simulations based on these models suggest that the bit-error rate of devices are highly non-uniform across the memory array. These models provide quantitative tools for evaluating the trade-offs between memory reliability and design parameters, such as array size, technology nodes, and aspect ratio, and also for designing coding-theoretic solutions that would be most effective for crossbar memory