CORE
🇺🇦Â
 make metadata, not war
Services
Services overview
Explore all CORE services
Access to raw data
API
Dataset
FastSync
Content discovery
Recommender
Discovery
OAI identifiers
OAI Resolver
Managing content
Dashboard
Bespoke contracts
Consultancy services
Support us
Support us
Membership
Sponsorship
Community governance
Advisory Board
Board of supporters
Research network
About
About us
Our mission
Team
Blog
FAQs
Contact us
Filters
1 research outputs found
Nb-doped Ga2O3 as charge-trapping layer for nonvolatile memory applications
Author
Huang XD
Lai PT
SHI R
Sin JKO
Publication venue
'Elsevier BV'
Publication date
01/01/2016
Field of study
No full text
HKU Scholars Hub
No full text
