Angle-resolved X-ray photoelectron spectroscopy (ARXPS) and a modified Levenberg-Marquardt fit procedure: a new combination for modeling thin layers

The combination of angle-resolved X-ray photoelectron spectroscopy (ARXPS) and a modified Levenberg-Marquardt (LM) fit procedure has been used to study a native oxide layer on a clean Si(100) substrate. Numerical calculations show that with an aperture of 3° or 9° of the electron analyser, the photoelectron take-off angle should not exceed 80° or 70°, respectively, as compared to normal take-off angles. At larger photoelectron take-off angles, the effect of the aperture on the photoelectron energy distribution may not be neglected. We show how absolute ARXPS measurements in which the same XPS feature is considered at several electron take-off angles are an alternative for relative ARXPS film thickness measurements, avoiding large errors in the quantitative results. Models for the composition and thickness of the oxide layer have been developed. Also, the errors in the parameters of these models have been calculated. It can be concluded that the native oxide layer on silicon is 27 ± 1 (±-5%) Å thick and that the ratio of the silicon atom concentration in the substrate to that in the native oxide layer is 3.7 ±- 0.3 (±-8%), values that agree well with the literature. This report shows that the combination of ARXPS and a LM fit procedure is well suited to study ultra-thin layers and gives reliable results

Electronic properties of very thin native SiO2/a-Si:H interfaces and their comparison with those prepared by both dielectric barrier discharge oxidation at atmospheric pressure and by chemical oxidation

The contribution deals with electronic properties of thin oxide/amorphous hydrogenated silicon (a-Si:H) measured by capacitance-voltage (C-V) and charge version of deep level transient spectroscopy (Q-DLTS). The interest was focused on the studies of the interface properties of very thin dielectrics formed by dielectric barrier discharge (DBD) or natively on the a-Si:H layer. These properties were compared with those of oxide layers prepared by chemical oxidation in HNO3. The DBD was used for the preparation of a very thin SiO2 layer on a-Si:H for the first time to our knowledge. Preliminary electrical measurements confirmed that a very low interface states density was detected in the case of the native oxide/a-Si:H and DBD oxide/a-Si:H

Photoemission study of the SiO₂conversion mechanism to magnesium silicate

The objective of this work is to investigate interface chemistries which minimize the interfacial silicon oxide transition region at Si/high-k dielectric interfaces. We report on the mechanism by which a silicon native oxide layer is converted into magnesium silicate. The deposition of metal Mg onto a SiO native oxide surface resulted in the formation of a magnesium silicide in addition to substochiometric silicon oxides and a significant decrease in the oxidised silicon signal. Annealing to 300 °C resulted in the decomposition of the magnesium silicide, oxidation of the Mg, and the desorption of excess metallic Mg. Subsequent annealing to 500 °C resulted in converting the SiO2 into magnesium silicate. The results suggest that the decomposition of the Mg silicide in the presence of the residual native oxide facilitates silicate formation at 500 °C. Due to the reported thermal stability of Mg silicate it is suggested that this process may be beneficial in modifying the interface characteristics of the Si/high-k dielectric interface which has potentially significant implications for future semiconductor device generations

Native surface oxide turns alloyed silicon membranes into nanophononic metamaterials with ultra-low thermal conductivity

A detailed understanding of the relation between microscopic structure and phonon propagation at the nan oscale is essential to design materials with desired phononic and thermal properties.Here we uncover a new mechanism of phonon interaction in surface oxidized membranes, i.e., native oxide layers interact with phonons in ultra-thin silicon membranes through local resonances. The local resonances reduce the low frequency phonon group velocities and shorten their mean free path. This effect opens up a new strategy for ultralow thermal conductivity design as it complements the scattering mechanism which scatters higher frequency modes effectively. The combination of native oxide layer and alloying with germanium in concentration as small as 5% reduces the thermal conductivity of silicon membranes to 100 time lower than the bulk. In addition, the resonance mechanism produced by native oxide surface layers is particularly effective for thermal condutivity reduction even at very low temperatures, at which only low frequency modes are populated.Comment: 6 pages, 5 figures, Accepted for publication in Physical Review

Enhanced atomic layer etching of native aluminum oxide for ultraviolet optical applications

We report on the development and application of an atomic layer etching (ALE) procedure based on alternating exposures of trimethylaluminum and anhydrous hydrogen fluoride (HF) implemented to controllably etch aluminum oxide. Our ALE process utilizes the same chemistry previously demonstrated in the atomic layer deposition of aluminum fluoride thin films, and can therefore be exploited to remove the surface oxide from metallic aluminum and replace it with thin fluoride layers in order to improve the performance of ultraviolet aluminum mirrors. This ALE process is modified relative to existing methods through the use of a chamber conditioning film of lithium fluoride, which is shown to enhance the loss of fluorine surface species and results in conformal layer-by-layer etching of aluminum oxide films. Etch properties were explored over a temperature range of 225 to 300 {\deg}C with the Al2O3 etch rate increasing from 0.8 to 1.2 {\AA} per ALE cycle at a fixed HF exposure of 60 ms per cycle. The effective etch rate has a dependence on the total HF exposure, but the process is shown to be scalable to large area substrates with a post-etch uniformity of better than 2% demonstrated on 125 mm diameter wafers. The efficacy of the ALE process in reducing interfacial native aluminum oxide on evaporated aluminum mirrors is demonstrated with characterization by x-ray photoelectron spectroscopy and measurements of ultraviolet reflectance at wavelengths down to 120 nm

Dynamic and Static Transmission Electron Microscopy Studies on Structural Evaluation of Au nano islands on Si (100) Surface

Transmission electron microscopy (TEM) study on morphological changes in gold nanostructures deposited on Si (100) upon annealing under different vacuum conditions has been reported. Au thin films of thickness ~2.0 nm were deposited under high vacuum condition (with the native oxide at the interface of Au and Si) using thermal evaporation. In-situ, high temperature (from room temperature (RT) to 850\degreeC) real time TEM measurements showed the evaluation of gold nanoparticles into rectangular/square shaped gold silicide structures. This has been attributed to selective thermal decomposition of native oxide layer. Ex-situ annealing in low vacuum (10-2 mbar) at 850\degreeC showed no growth of nano-gold silicide structures. Under low vacuum annealing conditions, the creation of oxide could be dominating compared to the decomposition of oxide layers resulting in the formation of barrier layer between Au and Si.Comment: 15 pages, 4 figure

The role of titanium in electromigrated tunnel junctions

A standard route for fabrication of nanoscopic tunnel junctions is via electromigration of lithographically prepared gold nanowires. In the lithography process, a thin adhesion layer, typically titanium, is used to promote the adhesion of the gold nanowires to the substrate. Here, we demonstrate that such an adhesion layer plays a vital role in the electrical transport behavior of electromigrated tunnel junctions. We show that junctions fabricated from gold deposited on top of a titanium adhesion layer are electrically stable at ambient conditions, in contrast to gold junctions without a titanium adhesion layer. We furthermore find that electromigrated junctions fabricated from pure titanium are electrically exceptionally stable. Based on our transport data, we provide evidence that the barrier in gold-on-titanium tunnel devices is formed by the native oxide of titanium

Ion-implantation induced anomalous surface amorphization in silicon

Spectroscopic ellipsometry (SE), high-depth-resolution Rutherford backscattering (RBS) and channeling have been used to examine the surface damage formed by room temperature N and B implantation into silicon. For the analysis of the SE data we used the conventional method of assuming appropriate optical models and fitting the model parameters (layer thicknesses and volume fraction of the amorphous silicon component in the layers) by linear regression. The dependence of the thickness of the surface-damaged silicon layer (beneath the native oxide layer) on the implantation parameters was determined: the higher the dose, the thicker the disordered layer at the surface. The mechanism of the surface amorphization process is explained in relation to the ion beam induced layer-by-layer amorphization. The results demonstrate the applicability of Spectroscopic ellipsometry with a proper optical model. RBS, as an independent cross-checking method supported the constructed optical model

Seedless electroplating on patterned silicon

Nickel thin films have been electrodeposited without the use of an additional\ud seed layer, on highly doped silicon wafers. These substrates conduct\ud sufficiently well to allow deposition using a peripherical electrical contact on\ud the wafer. Films 2 μm thick have been deposited using a nickel sulfamate\ud bath on both n+- and p+-type silicon wafers, where a series of trenches with\ud different widths had been previously etched by plasma etching. A new,\ud reliable and simple procedure based on the removal of the native oxide layer\ud is presented which allows uniform plating of patterned substrates

Difference in charge transport properties of Ni-Nb thin films with native and artificial oxide

Here, we report on the properties of native and artificial oxide amorphous thin film on a surface of an amorphous Ni-Nb sample. Careful measurements of local current-voltage characteristics of the system Ni-Nb / NiNb oxide/Pt, were carried out in contact mode of an atomic force microscope. Native oxide showed n-type conductivity, while in the artificial one exhibited p-type one. The shape of current-voltage characteristic curves is unique in both cases and no analogical behavior is found in the literature. X-ray photoelectron spectroscopy (XPS) measurements were used to detect chemical composition of the oxide films and the oxidation state of the alloy components. Detailed analysis of the XPS data revealed that the structure of natural Ni-Nb oxide film consists of Ni-NbOx top layer and nickel enriched bottom layer which provides n-type conductivity. In contrast, in the artificial oxide film Nb is oxidized completely to Nb2O5, Ni atoms migrate into bulk Ni-Nb matrix. Electron depletion layer is formed at the Ni-Nb/Nb2O5 interface providing ptype conductivity