1 research outputs found
Multilayer Graphene Nanoribbon and Carbon Nanotube based Floating Gate Transistor for Nonvolatile Flash Memory
Floating gate transistor is the basic building block of non-volatile flash
memory, which is one of the most widely used memory gadgets in modern micro and
nano electronic applications. Recently there has been a surge of interest to
introduce a new generation of memory devices using graphene nanotechnology. In
this paper we present a new floating gate transistor (FGT) design based on
multilayer graphene nanoribbon (MLGNR) and carbon nanotube (CNT). In the
proposed FGT a multilayer structure of graphene nanoribbon (GNR) would be used
as the channel of the field effect transistor (FET) and a layer of CNTs would
be used as the floating gate. We have performed an analysis of the charge
accumulation mechanism in the floating gate and its dependence on the applied
terminal voltages. Based on our analysis we have observed that proposed
graphene based floating gate transistor could be operated at a reduced voltage
compared to conventional silicon based floating gate devices. We have presented
detail analysis of the operation and the programming and erasing processes of
the proposed FGT, dependency of the programming and erasing current density on
different parameters, impact of scaling the thicknesses of the control and
tunneling oxides. These analysis are done based on the capacitance model of the
device