Minimizing Test Power in SRAM through Reduction of Pre-charge Activity

In this paper we analyze the test power of SRAM memories and demonstrate that the full functional pre-charge activity is not necessary during test mode because of the predictable addressing sequence. We exploit this observation in order to minimize power dissipation during test by eliminating the unnecessary power consumption associated with the pre-charge activity. This is achieved through a modified pre-charge control circuitry, exploiting the first degree of freedom of March tests, which allows choosing a specific addressing sequence. The efficiency of the proposed solution is validated through extensive Spice simulations

Comparing different solutions for testing resistive defects in low-power SRAMs

Low-power SRAM architectures are especially sensitive to many types of defects that may occur during manufacturing. Among these, resistive defects can appear. This paper analyzes some types of such defects that may impair the device functionalities in subtle ways, depending on the defect characteristics, and that may not be directly or easily detectable by traditional test methods, such as March algorithms. We analyze different methods to test such defects and discuss them in terms of complexity and test time