1 research outputs found
Comparative study of the self-heating effect in the accumulation and inversion mode FinFETs
In this work, the self-heating effect in inversion mode FinFET and
Junctionless (accumulation mode) FinFET is compared and the influence of the
different electrical and geometric parameters on the self-heating effect are
considered. It is shown, that the lattice temperature in the channel center is
higher in junctionless (JL), accumulation mode FinFET than in inversion mode
FinFET with the same parameters. The difference in the temperature is explained
by the difference in the structure, particularly by the difference in the
doping level of the channel for these transistors. The dependence of the
self-heating effect on the doping depth and doping profile of the source and
drain areas along the channel were considered