Optically Thin Metallic Films for High-radiative-efficiency Plasmonics

Plasmonics enables deep-subwavelength concentration of light and has become important for fundamental studies as well as real-life applications. Two major existing platforms of plasmonics are metallic nanoparticles and metallic films. Metallic nanoparticles allow efficient coupling to far field radiation, yet their synthesis typically leads to poor material quality. Metallic films offer substantially higher quality materials, but their coupling to radiation is typically jeopardized due to the large momentum mismatch with free space. Here, we propose and theoretically investigate optically thin metallic films as an ideal platform for high-radiative-efficiency plasmonics. For far-field scattering, adding a thin high-quality metallic substrate enables a higher quality factor while maintaining the localization and tunability that the nanoparticle provides. For near-field spontaneous emission, a thin metallic substrate, of high quality or not, greatly improves the field overlap between the emitter environment and propagating surface plasmons, enabling high-Purcell (total enhancement > $10^4$), high-quantum-yield (> 50 %) spontaneous emission, even as the gap size vanishes (3$\sim$5 nm). The enhancement has almost spatially independent efficiency and does not suffer from quenching effects that commonly exist in previous structures.Comment: Supporting Information not included but freely available from DOI:10.1021/acs.nanolett.6b0085

Amorphous metallic films in silicon metallization systems

The general objective was to determine the potential of amorphous metallic thin films as a means of improving the stability of metallic contacts to a silicon substrate. The specific objective pursued was to determine the role of nitrogen in the formation and the resulting properties of amorphous thin-film diffusion barriers. Amorphous metallic films are attractive as diffusion barriers because of the low atomic diffusivity in these materials. Previous investigations revealed that in meeting this condition alone, good diffusion barriers are not necessarily obtained, because amorphous films can react with an adjacent medium (e.g., Si, Al) before they recrystallize. In the case of a silicon single-crystalline substrate, correlation exists between the temperature at which an amorphous metallic binary thin film reacts and the temperatures at which the films made of the same two metallic elements react individually. Amorphous binary films made of Zr and W were investigated. Both react with Si individually only at elevated temperatures. It was confirmed that such films react with Si only above 700 C when annealed in vacuum for 30 min. Amorphous W-N films were also investigated. They are more stable as barriers between Al and Si than polycrystalline W. Nitrogen effectively prevents the W-Al reaction that sets in at 500 C with polycrystalline W

Substrate-induced half-metallic property in epitaxial silicene

For most practical applications in electronic devices, two-dimensional materials should be transferred onto semiconducting or insulating substrates, since they are usually generated on metallic substrates. However, the transfer often leads to wrinkles, damages, contaminations and so on which would destroy the intrinsic properties of samples. Thus, generating two-dimensional materials directly on nonmetallic substrates has been a desirable goal for a long time. Here, via a swarm structure search method and density functional theory, we employed an insulating N-terminated cubic boron nitride(111) surface as a substrate for the generation of silicene. The result shows that the silicene behaves as a ferromagnetic half-metal because of the strong interaction between silicon and surface nitrogen atoms. The magnetic moments are mainly located on surface nitrogen sites without bonding silicon atoms and the value is about 0.12 uB. In spin-up channel, it behaves as a direct band gap semiconductor with a gap of around 1.35 eV, while it exhibits metallic characteristic in spin-down channel, and the half-metallic band gap is about 0.11 eV. Besides, both the magnetic and electronic properties are not sensitive to the external compressive strain. This work maybe open a way for the utility of silicene in spintronic field

Surface and volume plasmons in metallic nanospheres in semiclassical RPA-type approach; near-field coupling of surface plasmons with semiconductor substrate

The random-phase-approximation semiclassical scheme for description of plasmon excitations in large metallic nanospheres, with radius range 10-60 nm, is formulated in an all-analytical version. The spectrum of plasmons is determined including both surface and volume type excitations and their mutual connections. The various channels for damping of surface plasmons are evaluated and the relevant resonance shifts are compared with the experimental data for metallic nanoparticles of different size located in dielectric medium or on the semiconductor substrate. The strong enhancement of energy transfer from the surface plasmon oscillations to the substrate semiconductor is explained in the regime of a near-field coupling in agreement with recent experimental observations for metallically nanomodified photo-diode systems

Plating by glass-bead peening

Technique permits plating of primarily metallic substrates with either metals or nonmetals at normal temperature. Peening uses compressed air to apply concurrent streams of small glass beads and powdered plating material to the substrate

Tunable spin transport in CrAs: role of correlation effects

Correlation effects on the electronic structure of half-metallic CrAs in zinc-blende structure are studied for different substrate lattice constants. Depending on the substrate the spectral weight of the non-quasiparticle states might be tuned from a well developed value in the case of InAs substrate to an almost negligible contribution for the GaAs one. A piezoelectric material that would allow the change in the substrate lattice parameters opens the possibility for practical investigations of the switchable (tunable) non-quasiparticle states. Since the latter are important for the tunneling magnetoresistance and related phenomena it creates new opportunities in spintronics.Comment: 12 pages, 3 figures, 2 tables. accepted PRB 71, 1 (2005

Rotational Reconstruction of Sapphire (0001)

The structure of the $(\sqrt{31}\times \sqrt{31})R\pm9^\circ$ reconstructed phase on sapphire (0001) surface is investigated by means of a simulation based on the energy minimization. The interaction between Al adatoms is described with the semi-empirical many-body Sutton-Chen potential, corrected for the charge transfer between the metallic overlayer and the substrate. The interactions between the Al adatoms and sapphire substrate are described with a simple three-dimensional potential field which has the hexagonal periodicity of sapphire surface. Our energy analysis gave evidence that the structure which is observed at room temperature is in fact a frozen high-temperature structure. In accordance with the X-ray scattering, a hexagonal domain pattern separated by domain walls has been found. The Al adatoms, distributed in two monolayers, are ordered and isomorphic to metallic Al(111) in the domains and disordered in the domain walls. The main reason for the rotational reconstruction is the lattice misfit between the metallic Al and sapphire.Comment: 15 pages with 4 eps figures in text. Uses psfig and elsart.cls (ELSEVIER Science). Submitted to Surf. Sc

Effect of Local Magnetic Moments on the Metallic Behavior in Two Dimensions

The temperature dependence of conductivity $\sigma (T)$ in the metallic phase of a two-dimensional electron system in silicon has been studied for different concentrations of local magnetic moments. The local moments have been induced by disorder, and their number was varied using substrate bias. The data suggest that in the limit of $T\to 0$ the metallic behavior, as characterized by $d\sigma/dT < 0$, is suppressed by an arbitrarily small amount of scattering by local magnetic moments.Comment: 4 pages, revtex, plus four encapsulated postscript figure