Lead Iodide Perovskite Light-Emitting Field-Effect Transistor

Despite the widespread use of solution-processable hybrid organic-inorganic perovskites in photovoltaic and light-emitting applications, determination of their intrinsic charge transport parameters has been elusive due to the variability of film preparation and history-dependent device performance. Here we show that screening effects associated to ionic transport can be effectively eliminated by lowering the operating temperature of methylammonium lead iodide perovskite (CH3NH3PbI3) field-effect transistors (FETs). Field-effect carrier mobility is found to increase by almost two orders of magnitude below 200 K, consistent with phonon scattering limited transport. Under balanced ambipolar carrier injection, gate-dependent electroluminescence is also observed from the transistor channel, with spectra revealing the tetragonal to orthorhombic phase transition. This first demonstration of CH3NH3PbI3 light-emitting FETs provides intrinsic transport parameters to guide materials and solar cell optimization, and will drive the development of new electro-optic device concepts, such as gated light emitting diodes and lasers operating at room temperature

Synthesis of Electromagnetic Metasurfaces: Principles and Illustrations

The paper presents partial overview of the mathematical synthesis and the physical realization of metasurfaces, and related illustrative examples. The synthesis consists in determining the exact tensorial surface susceptibility functions of the metasurface, based on generalized sheet transition conditions, while the realization deals with both metallic and dielectric scattering particle structures. The examples demonstrate the capabilities of the synthesis and realization techniques, thereby showing the plethora of possible metasurface field transmission and subsequent applications. The first example is the design of two diffraction engineering birefringent metasurfaces performing polarization beam splitting and orbital angular momentum multiplexing, respectively. Next, we discuss the concept of the "transistor" metasurface, which is an electromagnetic linear switch based on destructive interferences. Then, we introduce a non-reciprocal non-gyrotropic metasurface using a pick-up circuit radiator (PCR) architecture. Finally, the implementation of all-dielectric metasurfaces for spatial dispersion engineering is discussed

Extending ballistic graphene FET lumped element models to diffusive devices

In this work, a modified, lumped element graphene field effect device model is presented. The model is based on the "Top-of-the-barrier" approach which is usually valid only for ballistic graphene nanotransistors. Proper modifications are introduced to extend the model's validity so that it accurately describes both ballistic and diffusive graphene devices. The model is compared to data already presented in the literature. It is shown that a good agreement is obtained for both nano-sized and large area graphene based channels. Accurate prediction of drain current and transconductance for both cases is obtained

Measurement of carrier transport and recombination parameter in heavily doped silicon

The minority carrier transport and recombination parameters in heavily doped bulk silicon were measured. Both Si:P and Si:B with bulk dopings from 10 to the 17th and 10 to the 20th power/cu cm were studied. It is shown that three parameters characterize transport in bulk heavily doped Si: the minority carrier lifetime tau, the minority carrier mobility mu, and the equilibrium minority carrier density of n sub 0 and p sub 0 (in p-type and n-type Si respectively.) However, dc current-voltage measurements can never measure all three of these parameters, and some ac or time-transient experiment is required to obtain the values of these parameters as a function of dopant density. Using both dc electrical measurements on bipolar transitors with heavily doped base regions and transients optical measurements on heavily doped bulk and epitaxially grown samples, lifetime, mobility, and bandgap narrowing were measured as a function of both p and n type dopant densities. Best fits of minority carrier mobility, bandgap narrowing and lifetime as a function of doping density (in the heavily doped range) were constructed to allow accurate modeling of minority carrier transport in heavily doped Si

Direct electronic measurement of the spin Hall effect

The generation, manipulation and detection of spin-polarized electrons in nanostructures define the main challenges of spin-based electronics[1]. Amongst the different approaches for spin generation and manipulation, spin-orbit coupling, which couples the spin of an electron to its momentum, is attracting considerable interest. In a spin-orbit-coupled system, a nonzero spin-current is predicted in a direction perpendicular to the applied electric field, giving rise to a "spin Hall effect"[2-4]. Consistent with this effect, electrically-induced spin polarization was recently detected by optical techniques at the edges of a semiconductor channel[5] and in two-dimensional electron gases in semiconductor heterostructures[6,7]. Here we report electrical measurements of the spin-Hall effect in a diffusive metallic conductor, using a ferromagnetic electrode in combination with a tunnel barrier to inject a spin-polarized current. In our devices, we observe an induced voltage that results exclusively from the conversion of the injected spin current into charge imbalance through the spin Hall effect. Such a voltage is proportional to the component of the injected spins that is perpendicular to the plane defined by the spin current direction and the voltage probes. These experiments reveal opportunities for efficient spin detection without the need for magnetic materials, which could lead to useful spintronics devices that integrate information processing and data storage.Comment: 5 pages, 4 figures. Accepted for publication in Nature (pending format approval

Quantum measurement characteristics of double-dot single electron transistor

Owing to a few unique advantages, double-dot single electron transistor has been proposed as an alternative detector for charge states. In this work, we present a further study for its signal-to-noise property, based on a full analysis of the setup configuration symmetry. It is found that the effectiveness of the double-dot detector can approach that of an ideal detector, if the symmetric capacitive coupling is taken into account. The quantum measurement efficiency is also analyzed, by comparing the measurement time with the measurement-induced dephasing time.Comment: 7 pages, 5 figure

Current-Voltage Characteristics of Long-Channel Nanobundle Thin-Film Transistors: A Bottom-up Perspective

By generalizing the classical linear response theory of stick percolation to nonlinear regime, we find that the drain current of a Nanobundle Thin Film Transistor (NB-TFT) is described under a rather general set of conditions by a universal scaling formula ID = A/LS g(LS/LC, rho_S * LS * LS) f(VG, VD), where A is a technology-specific constant, g is function of geometrical factors like stick length (LS), channel length (LC), and stick density (rho_S) and f is a function of drain (VD) and gate (VG) biasing conditions. This scaling formula implies that the measurement of full I-V characteristics of a single NB-TFT is sufficient to predict the performance characteristics of any other transistor with arbitrary geometrical parameters and biasing conditions