Controlled open-cell two-dimensional liquid foam generation for micro- and nanoscale patterning of materials

Liquid foam consists of liquid film networks. The films can be thinned to the nanoscale via evaporation and have potential in bottom-up material structuring applications. However, their use has been limited due to their dynamic fluidity, complex topological changes, and physical characteristics of the closed system. Here, we present a simple and versatile microfluidic approach for controlling two-dimensional liquid foam, designing not only evaporative microholes for directed drainage to generate desired film networks without topological changes for the first time, but also microposts to pin the generated films at set positions. Patterning materials in liquid is achievable using the thin films as nanoscale molds, which has additional potential through repeatable patterning on a substrate and combination with a lithographic technique. By enabling direct-writable multi-integrated patterning of various heterogeneous materials in two-dimensional or three-dimensional networked nanostructures, this technique provides novel means of nanofabrication superior to both lithographic and bottom-up state-of-the-art techniques

Tailoring the atomic structure of graphene nanoribbons by STM lithography

The practical realization of nano-scale electronics faces two major challenges: the precise engineering of the building blocks and their assembly into functional circuits. In spite of the exceptional electronic properties of carbon nanotubes only basic demonstration-devices have been realized by time-consuming processes. This is mainly due to the lack of selective growth and reliable assembly processes for nanotubes. However, graphene offers an attractive alternative. Here we report the patterning of graphene nanoribbons (GNRs) and bent junctions with nanometer precision, well-defined widths and predetermined crystallographic orientations allowing us to fully engineer their electronic structure using scanning tunneling microscope (STM) lithography. The atomic structure and electronic properties of the ribbons have been investigated by STM and tunneling spectroscopy measurements. Opening of confinement gaps up to 0.5 eV, allowing room temperature operation of GNR-based devices, is reported. This method avoids the difficulties of assembling nano-scale components and allows the realization of complete integrated circuits, operating as room temperature ballistic electronic devices.Comment: 8 pages text, 5 figures, Nature Nanotechnology, in pres

Manufacturing flexible light-emitting polymer displays with conductive lithographic film technology

We report on a new low-cost manufacturing process for flexible displays that has the potential to rapidly expand the market into areas that have traditionally been outside the scope of such technology. In this paper we consider the feasibility of using offset-lithography to deposit contacts for polymer light-emitting displays. We compare and contrast manufacturing criteria and present a case study detailing our initial results. It is expected that these developments will stimulate further progress in multilayer device fabrication. Cheap, flexible conductive interconnects have the potential to find applications in a wide variety of device structures. For the more challenging exploitation areas in multilayer devices, such as displays, it was found that the properties of conductive lithographic films were not optimal in their current form. Three parameters (conductivity, surface roughness and surface work function) were identified as critical to device fabrication. Calendering and electroless plating were investigated as methods to improve these properties. Both methods aimed to modify the surface roughness and conductivity, with the plating study also modifying the work function

Improving the Resolution and Throughput of Achromatic Talbot Lithography

High-resolution patterning of periodic structures over large areas has several applications in science and technology. One such method, based on the long-known Talbot effect observed with diffraction gratings, is achromatic Talbot lithography (ATL). This method offers many advantages over other techniques, such as high resolution, large depth of focus, high throughput, etc. Although the technique has been studied in the past, its limits have not yet been explored. Increasing the efficiency and the resolution of the method is essential and might enable many applications in science and technology. In this work, we combine this technique with spatially coherent and quasi-monochromatic light at extreme ultraviolet (EUV) wavelengths and explore new mask design schemes in order to enhance its throughput and resolution. We report on simulations of various mask designs in order to explore their efficiency. Advanced and optimized nanofabrication techniques have to be utilized to achieve high quality and efficient masks for ATL. Exposures using coherent EUV radiation from the Swiss light source (SLS) have been performed, pushing the resolution limits of the technique for dense hole or dot patterning down to 40 nm pitch. In addition, through extensive simulations, alternative mask designs with rings instead of holes are explored for the efficient patterning of hole/dot arrays. We show that these rings exhibit similar aerial images to hole arrays, while enabling higher efficiency and thereby increased throughput for ATL exposures. The mask designs with rings show that they are less prone to problems associated with pattern collapse during the nanofabrication process and therefore are promising for achieving higher resolution

Changes in the near edge X-ray absorption fine structure of hybrid organic-inorganic resists upon exposure

We report on the near edge X-ray absorption fine structure (NEXAFS) spectroscopy of hybrid organic-inorganic resists. These materials are nonchemically amplified systems based on Si, Zr, and Ti oxides, synthesized from organically modified precursors and transition metal alkoxides by a sol-gel route and designed for ultraviolet, extreme ultraviolet and electron beam lithography. The experiments were conducted using a scanning transmission X-ray microscope (STXM) which combines high spatial-resolution microscopy and NEXAFS spectroscopy. The absorption spectra were collected in the proximity of the carbon edge (~ 290 eV) before and after in situ exposure, enabling the measurement of a significant photo-induced degradation of the organic group (phenyl or methyl methacrylate, respectively), the degree of which depends on the configuration of the ligand. Photo-induced degradation was more efficient in the resist synthesized with pendant phenyl substituents than it was in the case of systems based on bridging phenyl groups. The degradation of the methyl methacrylate group was relatively efficient, with about half of the initial ligands dissociated upon exposure. Our data reveal that the such dissociation can produce different outcomes, depending on the structural configuration. While all the organic groups were expected to detach and desorb from the resist in their entirety, a sizeable amount of them remain and form undesired byproducts such as alkene chains. In the framework of the materials synthesis and engineering through specific building blocks, these results provide a deeper insight into the photochemistry of resists, in particular for extreme ultraviolet lithography

Photobase Generator Enabled Pitch Division: A Progress Report

Pitch division lithography (PDL) with a photobase generator (PBG) allows printing of grating images with twice the pitch of a mask. The proof-of-concept has been published in the previous paper[1, 2] and demonstrated by others[1]. Forty five nm half-pitch (HP) patterns were produced using a 90nm HP mask, but the image had line edge roughness (LER) that does not meet requirements. Efforts have been made to understand and improve the LER in this process. Challenges were summarized toward low LER and good performing pitch division. Simulations and analysis showed the necessity for an optical image that is uniform in the z direction in order for pitch division to be successful. Two-stage PBGs were designed for enhancement of resist chemical contrast. New pitch division resists with polymer-bound PAGs and PBGs, and various PBGs were tested. This paper focuses on analysis of the LER problems and efforts to improve patterning performance in pitch division lithography.Chemical Engineerin

Spiers Memorial Lecture: Molecular mechanics and molecular electronics

We describe our research into building integrated molecular electronics circuitry for a diverse set of functions, and with a focus on the fundamental scientific issues that surround this project. In particular, we discuss experiments aimed at understanding the function of bistable [2]rotaxane molecular electronic switches by correlating the switching kinetics and ground state thermodynamic properties of those switches in various environments, ranging from the solution phase to a Langmuir monolayer of the switching molecules sandwiched between two electrodes. We discuss various devices, low bit-density memory circuits, and ultra-high density memory circuits that utilize the electrochemical switching characteristics of these molecules in conjunction with novel patterning methods. We also discuss interconnect schemes that are capable of bridging the micrometre to submicrometre length scales of conventional patterning approaches to the near-molecular length scales of the ultra-dense memory circuits. Finally, we discuss some of the challenges associated with fabricated ultra-dense molecular electronic integrated circuits

Metal mask free dry-etching process for integrated optical devices applying highly photostabilized resist.

Photostabilization is a widely used post lithographic resist treatment process, which allows to harden the resist profile in order to maintain critical dimensions and to increase selectivity in subsequent process steps such as reactive ion etching. In this paper we present the optimization of deep UV-curing of 0,3-3.3 μm thick positive resist profiles followed by heat treatment up to 280 °C. The effectiveness of this resist treatment allows for metal mask free reactive ion etching with selectivity up to 6 for silicon structures, thermal silicon oxide and silicon oxynitride. This procedure is demonstrated by the results obtained in etching of various integrated optical structures