Room temperature continuous wave operation of single-mode, edge-emitting photonic crystal Bragg lasers

We report the first room temperature CW operation of two dimensional single-mode edge-emitting photonic crystal Bragg lasers. Single-mode lasing with single-lobed, diffraction limited far-fields is obtained for 100μm wide and 550μm long on-chip devices. We also demonstrate the tuning of the lasing wavelength by changing the transverse lattice constant of the photonic crystal. This enables a fine wavelength tuning sensitivity (change of the lasing wavelength/change of the lattice constant) of 0.072. This dependence proves that the lasing mode is selected by the photonic crystal lattice

Wave interference effect on polymer microstadium laser

We investigate the lasing modes in fully chaotic polymer microstadiums under optical pumping. The lasing modes are regularly spaced in frequency, and their amplitudes oscillate with frequency. Our numerical simulations reveal that the lasing modes are multi-orbit scar modes. The interference of partial waves propagating along the constituent orbits results in local maxima of quality factor at certain frequencies. The observed modulation of lasing mode amplitude with frequency results from the variation of quality factor, which provides the direct evidence of wave interference effect in open chaotic microcavities

Longitudinal mode spectrum of GaAs injection lasers under high-frequency microwave modulation

Experimental observations of the lasing spectrum of a single mode semiconductor laser under continuous microwave modulation reveal that the lasing spectrum is apparently locked to a single longitudinal mode for optical modulation depths up to ~80%, beyond which the lasing spectrum becomes multimoded, whose envelope width increases very rapidly with further increase in modulation depth. These results are satisfactorily explained by a theoretical treatment which enables one to predict the dynamic lasing spectrum of a laser from its cw lasing spectra at various output powers

Mode Repulsion and Mode Coupling in Random Lasers

We studied experimentally and theoretically the interaction of lasing modes in random media. In a homogeneously broadened gain medium, cross gain saturation leads to spatial repulsion of lasing modes. In an inhomogeneously broadened gain medium, mode repulsion occurs in the spectral domain. Some lasing modes are coupled through photon hopping or electron absorption and reemission. Under pulsed pumping, weak coupling of two modes leads to synchronization of their lasing action. Strong coupling of two lasing modes results in anti-phased oscillations of their intensities.Comment: 13 pages, 4 figure

A study of random laser modes in disordered photonic crystals

We studied lasing modes in a disordered photonic crystal. The scaling of the lasing threshold with the system size depends on the strength of disorder. For sufficiently large size, the minimum of the lasing threshold occurs at some finite value of disorder strength. The highest random cavity quality factor was comparable to that of an intentionally introduced single defect. At the minimum, the lasing threshold showed a super-exponential decrease with the size of the system. We explain it through a migration of the lasing mode frequencies toward the photonic bandgap center, where the localization length takes the minimum value. Random lasers with exponentially low thresholds are predicted.Comment: 4 pages, 4 figure

Polarization features of optically pumped CdS nanowire lasers

High quality CdS nanowires suspended in air were optically pumped both below and above the lasing threshold. The polarization of the pump laser was varied while emission out of the end facet of the nanowire was monitored in a 'head-on' measurement geometry. Highest pump-efficiency and most efficient absorption of the pump radiation are demonstrated for an incident electric field being polarized parallel to the nanowire axis. This polarization dependence, which was observed both above the lasing threshold and in the regime of amplified spontaneous emission, is caused by an enhanced absorption for parallel polarized optical pumping. Measured Stokes parameters of the nanowire emission reveal that due to the onset of lasing the degree of polarization rapidly increases from approximately 15% to 85%. Both, Stokes parameters and degree of polarization of the nanowire lasing emission are independent of the excitation polarization. The transversal lasing mode is therefore not notably affected by the polarization of the pumping beam, although the supply with optical gain is significantly enhanced for an excitation polarization parallel to the nanowire axis

Polariton laser using single micropillar GaAs-GaAlAs semiconductor cavities

Polariton lasing is demonstrated on the zero dimensional states of single GaAs/GaAlAs micropillar cavities. Under non resonant excitation, the measured polariton ground state occupancy is found to be as large as $10^{4}$. Changing the spatial excitation conditions, competition between several polariton lasing modes is observed, ruling out Bose-Einstein condensation. When the polariton state occupancy increases, the emission blueshift is the signature of self-interaction within the half-light half-matter polariton lasing mode.Comment: 5 pages, 4 figures, accepted for publication in Physical Review Letter