Confocal microphotoluminescence of InGaN-based light-emitting diodes

Spatially resolved photoluminescence (PL) of InGaN/GaN/AlGaN-based quantum-well-structured light-emitting diodes (LEDs) with a yellow-green light (530 nm) and an amber light (600 nm) was measured by using confocal microscopy. Submicron-scale spatial inhomogeneities of both PL intensities and spectra were found in confocal micro-PL images. We also found clear correlations between PL intensities and peak wavelength for both LEDs. Such correlations for yellow-green and amber LEDs were different from the reported correlations for blue or green LEDs. This discrepancy should be due to different diffusion, localization, and recombination dynamics of electron-hole pairs generated in InGaN active layers, and should be a very important property for influencing the optical properties of LEDs. In order to explain the results, we proposed a possible carrier dynamics model based on the carrier localization and partial reduction of the quantum confinement Stark effect depending on an indium composition in InGaN active layers. By using this model, we also considered the origin of the reduction of the emission efficiencies with a longer emission wavelength of InGaN LEDs with high indium composition

Red-emitting Ba2Si5N8Eu2+ conversion phosphor: A new selection for enhancing the optical performance of the in-cup packaging MCW-LEDs

In this research, the influence of the red-emitting Ba2Si5N8Eu2+ convention phosphor on the optical performance of the 7,000K and 7,700K in-cup packaging multi-chip white LEDs (MCW-LEDs) is investigated. The effect of the red-emitting Ba2Si5N8Eu2+ convention phosphor is demonstrated based on Mie Theory by Mat Lab and Light Tools software. The research results indicated that the optical performance of MCW-LEDs was crucially affected by the red-emitting Ba2Si5N8Eu2+ phosphor's concentration. This paper provides an essential recommendation for selecting and developing the phosphor materials for MW-LEDs manufacturing.Web of Science51art. no. 148615

Distinct roles for inhibition in spatial and temporal tuning of local edge detectors in the rabbit retina.

This paper examines the role of inhibition in generating the receptive-field properties of local edge detector (LED) ganglion cells in the rabbit retina. We confirm that the feed-forward inhibition is largely glycinergic but, contrary to a recent report, our data demonstrate that the glycinergic inhibition contributes to temporal tuning for the OFF and ON inputs to the LEDs by delaying the onset of spiking; this delay was more pronounced for the ON inputs (∼ 340 ms) than the OFF inputs (∼ 12 ms). Blocking glycinergic transmission reduced the delay to spike onset and increased the responses to flickering stimuli at high frequencies. Analysis of the synaptic conductances indicates that glycinergic amacrine cells affect temporal tuning through both postsynaptic inhibition of the LEDs and presynaptic modulation of the bipolar cells that drive the LEDs. The results also confirm that presynaptic GABAergic transmission contributes significantly to the concentric surround antagonism in LEDs; however, unlike presumed LEDs in the mouse retina, the surround is only partly generated by spiking amacrine cells

Fabrication technology for high light-extraction ultraviolet thin-film flip-chip (UV TFFC) LEDs grown on SiC

The light output of deep ultraviolet (UV-C) AlGaN light-emitting diodes (LEDs) is limited due to their poor light extraction efficiency (LEE). To improve the LEE of AlGaN LEDs, we developed a fabrication technology to process AlGaN LEDs grown on SiC into thin-film flip-chip LEDs (TFFC LEDs) with high LEE. This process transfers the AlGaN LED epi onto a new substrate by wafer-to-wafer bonding, and by removing the absorbing SiC substrate with a highly selective SF6 plasma etch that stops at the AlN buffer layer. We optimized the inductively coupled plasma (ICP) SF6 etch parameters to develop a substrate-removal process with high reliability and precise epitaxial control, without creating micromasking defects or degrading the health of the plasma etching system. The SiC etch rate by SF6 plasma was ~46 \mu m/hr at a high RF bias (400 W), and ~7 \mu m/hr at a low RF bias (49 W) with very high etch selectivity between SiC and AlN. The high SF6 etch selectivity between SiC and AlN was essential for removing the SiC substrate and exposing a pristine, smooth AlN surface. We demonstrated the epi-transfer process by fabricating high light extraction TFFC LEDs from AlGaN LEDs grown on SiC. To further enhance the light extraction, the exposed N-face AlN was anisotropically etched in dilute KOH. The LEE of the AlGaN LED improved by ~3X after KOH roughening at room temperature. This AlGaN TFFC LED process establishes a viable path to high external quantum efficiency (EQE) and power conversion efficiency (PCE) UV-C LEDs.Comment: 22 pages, 6 figures. (accepted in Semiconductor Science and Technology, SST-105156.R1 2018

Mid-infrared LEDs versus thermal emitters in IR dynamic scene simulation devices

In a radical departure from conventional thermal emitter-based dynamic IR scene simulation devices, we have tested InAsSbP/InAs LEDs grown by liquid phase epitaxy and tuned at several peak-emitting wavelengths inside the mid-IR band. Light uniformity, radiation apparent temperature (Ta), thermal resistance, and self heating details were characterized at T=300 K in the microscale by calibrated infrared cameras in the 3-5 mm (light pattern) and 8-12 μm (heat pattern) bands. We show that LEDs are capable of simulating very hot (Ta ³740 K) targets as well as cold objects and low observable with respect to a particular background. We resume that cost effective LEDs enable a platform for photonic scene projection devices able to compete with thermal microemitter MEMS technology in testing and stimulating very high-speed infrared sensors used for military and commercial applications. Proposals on how to further increase LEDs performance are given

Thermal And Mechanical Analysis of High-power Light-emitting Diodes with Ceramic Packages

In this paper we present the thermal and mechanical analysis of high-power light-emitting diodes (LEDs) with ceramic packages. Transient thermal measurements and thermo-mechanical simulation were performed to study the thermal and mechanical characteristics of ceramic packages. Thermal resistance from the junction to the ambient was decreased from 76.1 oC/W to 45.3 oC/W by replacing plastic mould to ceramic mould for LED packages. Higher level of thermo-mechanical stresses in the chip were found for LEDs with ceramic packages despite of less mismatching coefficients of thermal expansion comparing with plastic packages. The results suggest that the thermal performance of LEDs can be improved by using ceramic packages, but the mounting process of the high power LEDs with ceramic packages is critically important and should be in charge of delaminating interface layers in the packages.Comment: Submitted on behalf of TIMA Editions (http://irevues.inist.fr/tima-editions

Ultra Bright LED Light Injection Calibration System for MINOS

We describe here a proposal for a light injection calibration system for the MINOS detectors based on ultra bright blue LEDs as the light source. We have shown that these LEDs are bright enough to span over two orders of magnitude in light intensity, commensurate with that expected in a single scintillator strip in the MINOS neutrino detectors.Comment: 9 pages, 13 figures, Submitted to NI

Multispectral mid-infrared light emitting diodes on a GaAs substrate

We have designed, simulated, and experimentally demonstrated four-colour mid-infrared (mid-IR) Light Emitting Diodes (LEDs) integrated monolithically into a vertical structure on a semi-insulating GaAs substrate. In order to finely control the peak wavelength of the emitted mid-IR light, quantum well (QW) structures based on AlInSb/InSb/AlInSb are employed. The completed device structure consists of three p-QW-n diodes with different well widths stacked on top of one bulk AlInSb p-i-n diode. The epitaxial layers comprising the device are designed in such a way that one contact layer is shared between two LEDs. The design of the heterostructure realising the multispectral LEDs was aided by numerical modelling, and good agreement is observed between the simulated and experimental results. Electro-Luminescence measurements, carried out at room temperature, confirm that the emission of each LED peaks at a different wavelength. Peak wavelengths of 3.40 μm, 3.50 μm, 3.95 μm, and 4.18 μm are observed in the bulk, 2 nm, 4 nm, and 6 nm quantum well LEDs, respectively. Under zero bias, Fourier Transform Infrared photo-response measurements indicate that these fabricated diodes can also be operated as mid-IR photodetectors with an extended cut-off wavelength up to 4.6 μm

NASA Light Emitting Diode Medical Applications from Deep Space to Deep Sea

This work is supported and managed through the NASA Marshall Space Flight Center-SBIR Program. LED-technology developed for NASA plant growth experiments in space shows promise for delivering light deep into tissues of the body to promote wound healing and human tissue growth. We present the results of LED-treatment of cells grown in culture and the effects of LEDs on patients’ chronic and acute wounds. LED-technology is also biologically optimal for photodynamic therapy of cancer and we discuss our successes using LEDs in conjunction with light-activated chemotherapeutic drugs