Annealing of SnO2 thin films by ultra-short laser pulses

Post-deposition annealing by ultra-short laser pulses can modify the optical properties of SnO2 thin films by means of thermal processing. Industrial grade SnO2 films exhibited improved optical properties after picosecond laser irradiation, at the expense of a slightly increased sheet resistance [Proc. SPIE 8826, 88260I (2013)]. The figure of merit ϕ = T10 / Rsh was increased up to 59% after laser processing. In this paper we study and discuss the causes of this improvement at the atomic scale, which explain the observed decrease of conductivity as well as the observed changes in the refractive index n and extinction coefficient k. It was concluded that the absorbed laser energy affected the optoelectronic properties preferentially in the top 100-200 nm region of the films by several mechanisms, including the modification of the stoichiometry, a slight desorption of dopant atoms (F), adsorption of hydrogen atoms from the atmosphere and the introduction of laser-induced defects, which affect the strain of the film

Insights into Electrochemical Reactions from Ambient Pressure Photoelectron Spectroscopy

The understanding of fundamental processes in the bulk and at the interfaces of electrochemical devices is a prerequisite for the development of new technologies with higher efficiency and improved performance. One energy storage scheme of great interest is splitting water to form hydrogen and oxygen gas and converting back to electrical energy by their subsequent recombination with only water as a byproduct. However, kinetic limitations to the rate of oxygen-based electrochemical reactions hamper the efficiency in technologies such as solar fuels, fuel cells, and electrolyzers. For these reactions, the use of metal oxides as electrocatalysts is prevalent due to their stability, low cost, and ability to store oxygen within the lattice. However, due to the inherently convoluted nature of electrochemical and chemical processes in electrochemical systems, it is difficult to isolate and study individual electrochemical processes in a complex system. Therefore, in situ characterization tools are required for observing related physical and chemical processes directly at the places where and while they occur and can help elucidate the mechanisms of charge separation and charge transfer at electrochemical interfaces.National Science Foundation (U.S.). Materials Research Science and Engineering Centers (Program)Skoltech-MIT Center for Electrochemical Energy StorageUnited States. Department of EnergyNational Energy Technology Laboratory (U.S.)Solid State Energy Conversion Alliance. Core Technology Program (DEFE0009435

Review of model sensor studies on Pd/SnO2(110) surfaces

Studies performed at the National Institute of Standards and Technology on the model gas sensor system, Pd/SnO2(110), are reviewed. Adsorption and interfacial effects play a primary role in the gas sensing process, as they do in catalysis. For this reason, researchers have used a variety of surface sensitive techniques in the research, including x ray and ultraviolet photoelectron spectroscopies (XPS and UPS), low energy electron diffraction (LEED), and ion scattering spectroscopy (ISS). By combining these complementary techniques with in situ gas response (conductance) measurements, researchers were able to correlate directly sensor activity with the composition and structure of the Pd/SnO2 interface. Although the intent of this work is to develop an understanding of gas sensing mechanisms, its relevance to Pt/SnO2 catalytic systems is obvious

Characterization of Electronic Transport through Amorphous TiO_2 Produced by Atomic-Layer Deposition

Electrical transport in amorphous titanium dioxide (a-TiO_2) thin films, deposited by atomic layer deposition (ALD), and across heterojunctions of p+-Si|a-TiO_2|metal substrates that had various top metal contacts has been characterized by ac conductivity, temperature-dependent dc conductivity, space-charge-limited current spectroscopy, electron paramagnetic resonance (EPR) spectroscopy, X-ray photoelectron spectroscopy, and current density versus voltage (J–V) characteristics. Amorphous TiO_2 films were fabricated using either tetrakis(dimethylamido)-titanium with a substrate temperature of 150 °C or TiCl_4 with a substrate temperature of 50, 100, or 150 °C. EPR spectroscopy of the films showed that the Ti^(3+) concentration varied with the deposition conditions and increases in the concentration of Ti^(3+) in the films correlated with increases in film conductivity. Valence band spectra for the a-TiO_2 films exhibited a defect-state peak below the conduction band minimum (CBM) and increases in the intensity of this peak correlated with increases in the Ti^(3+) concentration measured by EPR as well as with increases in film conductivity. The temperature-dependent conduction data showed Arrhenius behavior at room temperature with an activation energy that decreased with decreasing temperature, suggesting that conduction did not occur primarily through either the valence or conduction bands. The data from all of the measurements are consistent with a Ti^(3+) defect-mediated transport mode involving a hopping mechanism with a defect density of 10^(19) cm^(–3), a 0.83 wide defect band centered 1.47 eV below the CBM, and a free-electron concentration of 10^(16) cm^(–3). The data are consistent with substantial room-temperature anodic conductivity resulting from the introduction of defect states during the ALD fabrication process as opposed to charge transport intrinsically associated with the conduction band of TiO_2