Indium joints for cryogenic gravitational wave detectors

A viable technique for the preparation of highly thermal conductive joints between sapphire components in gravitational wave detectors is presented. The mechanical loss of such a joint was determined to be as low as 2 × 10−3 at 20 K and 2 × 10−2 at 300 K. The thermal noise performance of a typical joint is compared to the requirements of the Japanese gravitational wave detector, KAGRA. It is shown that using such an indium joint in the suspension system allows it to operate with low thermal noise. Additionally, results on the maximum amount of heat which can be extracted via indium joints are presented. It is found that sapphire parts, joined by means of indium, are able to remove the residual heat load in the mirrors of KAGRA

Quasi-monolithic mirror suspensions in ground-based gravitational wave detectors

At the commencement of a new era in astrophysics, with added information from direct detections of gravitational-wave (GW) signals, this paper is a testament to the quasi-monolithic suspensions of the test masses of the GW detectors that have enabled the opening of a new window on the universe. The quasi-monolithic suspensions are the final stages in the seismic isolation of the test masses in GW detectors, and are specifically designed to introduce as little thermal noise as possible. The history of the development of the fused-silica quasi-monolithic suspensions, which have been so essential for the first detections of GWs, is outlined and a glimpse into the status of research towards quasi-monolithic suspensions made of sapphire and silicon is given. This article is part of a discussion meeting issue ‘The promises of gravitational-wave astronomy’

The cadmium electrode: Review of the status of research

Investigations characterizing the negative cadmium electrode used in a nickel cadmium battery cell are summarized with citations to references where more detailed information is available. Emphasis is placed on data pertinent to aerospace applications. An evaluation of some of the published results of cadmium electrode research is included

Growth Techniques for Bulk ZnO and Related Compounds

ZnO bulk crystals can be grown by several methods. 1) From the gas phase, usually by chemical vapor transport. Such CVT crystals may have high chemical purity, as the growth is performed without contact to foreign material. The crystallographic quality is often very high (free growth). 2) From melt fluxes such as alkaline hydroxides or other oxides (MoO3, V2O5, P2O5, PbO) and salts (PbCl2, PbF2). Melt fluxes offer the possibility to grow bulk ZnO under mild conditions (<1000 deg. C, atmospheric pressure), but the crystals always contain traces of solvent. The limited purity is a severe drawback, especially for electronic applications. 3) From hydrothermal fluxes, usually alkaline (KOH, LiOH) aqueous solutions beyond the critical point. Due to the amphoteric character of ZnO, the supercritical bases can dissolve it up to several per cent of mass. The technical requirements for this growth technology are generally hard, but this did not hinder its development as the basic technique for the growth of {\alpha}-quartz, and meanwhile also of zinc oxide, during the last decades. 4) From pure melts, which is the preferred technology for numerous substances applied whenever possible, e.g. for the growth of silicon, gallium arsenide, sapphire, YAG. The benefits of melt growth are (i) the high growth rate and (ii) the absence of solvent related impurities. In the case of ZnO, however, it is difficult to find container materials that are compatible from the thermal (fusion point Tf = 1975 deg. C) and chemical (required oxygen partial pressure) point of view. Either cold crucible (skull melting) or Bridgman (with reactive atmosphere) techniques were shown to overcome the problems that are inherent to melt growth. Reactive atmospheres allow to grow not only bulk ZnO single crystals, but also other TCOs such as {\beta}-Ga2O3 and In2O3.Comment: 10 pages, 7 figures, talk on MRS Fall 2011 Bosto

Optical characterization of europium-doped indium hydroxide nanocubes obtained by Microwave-Assisted Hydrothermal method

Crystalline europium-doped indium hydroxide (In(OH)3:Eu) nanostructures were prepared by rapid and efficient Microwave-Assisted Hydrothermal (MAH) method. Nanostructures were obtained at low temperature. FE-SEM images confirm that these samples are composed of 3D nanostructures. XRD, optical diffuse reflectance and photoluminescence (PL) measurements were used to characterize the products. Emission spectra of europium-doped indium hydroxide (IH:xEu) samples under excitation (350.7 nm) presented broad band emission regarding the indium hydroxide (IH) matrix and 5D0 → 7F0, 5D0 → 7F1, 5D0 → 7F2, 5D0 → 7F3 and 5D0 → 7F4 europium transitions at 582, 596, 618, 653 and 701 nm, respectively. Relative intensities of Eu3+ emissions increased as the concentration of this ion increased from 0, 1, 2, 4 and 8 mol %, of Eu3+, but the luminescence is drastically quenched for the IH matrix.Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Universidade Federal do Rio Grande do Norte Centro de Tecnologia Departamento de Engenharia de MateriaisUniversidade Federal de São Paulo (UNIFESP)Universidade de São Paulo Instituto de Física de São CarlosUniversidade Estadual Paulista Instituto de Química Laboratório Interdisciplinar de Eletroquímica e CerâmicaUNIFESPFAPESP: 2013/07296-2SciEL

Didymium hydrate additive to nickel hydroxide electrodes Patent

Including didymium hydrate in nickel hydroxide of positive electrode of storage batteries to increase ampere hour capacit

Diagrams of the formation of In2S3 and In 2Se3 films on vitroceramic upon precipitation, according to potentiometric titration

Boundary conditions and ranges of the formation of indium(III) sulfide and selenide upon precipitation by thiocarbamide and selenocarbamide are determined. Potentiometric titration of indium chloride (InCl3) in the concentration range of 0.0001 to 0.100 mol/L by a solution of sodium hydroxide is performed. It is found that the following pH ranges are optimal for In 2S3 and In2Se3 film precipitation: from 3.0 to 4.5 and from 9.0 to 14.0. Indium selenide layers 100 to 300 nm thick are prepared on vitroceramic by hydrochemcial precipitation. © 2013 Pleiades Publishing, Ltd