Lagrangian relaxation-based multi-threaded discrete gate sizer

In integrated circuit design gate sizing is one of the key optimization techniques which is repeatedly invoked to trade-off delays for area and/or power of the gates during logic design and physical design stages. With increasing design sizes of a million gates and larger, discrete gate sizes and non-convex delay models the gate sizing algorithms that were designed for continuous sizes and convex delay models are slow and timing inaccurate. Of the several published discrete gate sizing algorithms, recent works have shown that Lagrangian relaxation based gate sizers have produced designs with the lowest power on average with high timing accuracy. But they are also very slow due to a large number of expensive timing updates spread across hundreds of iterations of solving the Lagrangian sub-problem. In this thesis we present a Lagrangian relaxation based multi-threaded discrete gate sizer for fast timing and power reduction by swapping the gate sizes and the threshold voltages. We developed two parallelization enabling techniques to reduce the runtime of Lagrangian sub-problem solver, namely, mutual exclusion edge (MEE) assignment and directed acyclic graph (DAG) based netlist traversal. MEEs are dummy edges assigned to reduce computational dependencies among gates sharing one or more common fan-ins. DAG based netlist traversal facilitates simultaneous resizing of gates belonging to different topological levels. We designed a Lagrange multiplier update framework that enables rapid convergence of the timing recovery and power recovery algorithms. To reduce the runtime of timing updates, we proposed a simple and fast-to-compute effective capacitance model and several mechanisms to calibrate the timing models to improve their accuracy. Compared to the state-of-the-art gate sizer, our proposed gate sizer is on average 15x faster and the optimized designs have only 1.7\% higher power. In digital synchronous designs simultaneous gate sizing and clock skew scheduling provides significantly more power saving. We extend the gate sizer to simultaneously schedule the clock skew. It can achieve an average of 18.8\% more reduction in power with only 20\% increase in the runtime

Modeling and Simulation of Advanced Nano-Scale Very Large Scale Integration Circuits

With VLSI(very large scale integration) technology shrinking and frequency increasing, the minimum feature size is smaller than sub-wavelength lithography wavelength, and the manufacturing cost is significantly increasing in order to achieve a good yield. Consequently design companies need to further lower power consumption. All these factors bring new challenges; simulation and modeling need to handle more design constraints, and need to work with modern manufacturing processes. In this dissertation, algorithms and new methodology are presented for these problems: (1) fast and accurate capacitance extraction, (2) capacitance extraction considering lithography effect, (3) BEOL(back end of line) impact on SRAM(static random access memory) performance and yield, and (4) new physical synthesis optimization flow is used to shed area and reduce the power consumption. Interconnect parasitic extraction plays an important role in simulation, verification, optimization. A fast and accurate parasitic extraction algorithm is always important for a current design automation tool. In this dissertation, we propose a new algorithm named HybCap to efficiently handle multiple planar, conformal or embedded dielectric media. From experimental results, the new method is significantly faster than the previous one, 77X speedup, and has a 99% memory savings compared with FastCap and 2X speedup, and has an 80% memory savings compared with PHiCap for complex dielectric media. In order to consider lithography effect in the existing LPE(Layout Parasitic Extraction) flow, a modified LPE flow and fast algorithms for interconnect parasitic extraction are proposed in this dissertation. Our methodology is efficient, compatible with the existing design flow and has high accuracy. With the new enhanced parasitic extraction flow, simulation of BEOL effect on SRAM performance becomes possible. A SRAM simulation model with internal cell interconnect RC parasitics is proposed in order to study the BEOL lithography impact. The impact of BEOL variations on memory designs are systematically evaluated in this dissertation. The results show the power estimation with our SRAM model is more accurate. Finally, a new optimization flow to shed area blow in the design synthesis flow is proposed, which is one level beyond simulation and modeling to directly optimize design, but is also built upon accurate simulations and modeling. Two simple, yet efficient, buffering and gate sizing techniques are presented. On 20 industrial designs in 45nm and 65nm, our new work achieves 12.5% logic area growth reduction, 5.8% total area reduction, 10% wirelength reduction and 770 ps worst slack improvement on average