Phase Noise in CMOS Phase-Locked Loop Circuits

Phase-locked loops (PLLs) have been widely used in mixed-signal integrated circuits. With the continuously increasing demand of market for high speed, low noise devices, PLLs are playing a more important role in communications. In this dissertation, phase noise and jitter performances are investigated in different types of PLL designs. Hot carrier and negative bias temperature instability effects are analyzed from simulations and experiments. Phase noise of a CMOS phase-locked loop as a frequency synthesizer circuit is modeled from the superposition of noises from its building blocks: voltage-controlled oscillator, frequency divider, phase-frequency detector, loop filter and auxiliary input reference clock. A linear time invariant model with additive noise sources in frequency domain is presented to analyze the phase noise. The modeled phase noise results are compared with the corresponding experimentally measured results on phase-locked loop chips fabricated in 0.5 m n-well CMOS process. With the scaling of CMOS technology and the increase of electrical field, MOS transistors have become very sensitive to hot carrier effect (HCE) and negative bias temperature instability (NBTI). These two reliability issues pose challenges to designers for designing of chips in deep submicron CMOS technologies. A new strategy of switchable CMOS phase-locked loop frequency synthesizer is proposed to increase its tuning range. The switchable PLL which integrates two phase-locked loops with different tuning frequencies are designed and fabricated in 0.5 µm CMOS process to analyze the effects under HCE and NBTI. A 3V 1.2 GHz programmable phase-locked loop frequency synthesizer is designed in 0.5 μm CMOS technology. The frequency synthesizer is implemented using LC voltage-controlled oscillator (VCO) and a low power dual-modulus prescaler. The LC VCO working range is from 900MHz to 1.4GHz. Current mode logic (CML) is used in designing high speed D flip-flop in the dual-modulus prescaler circuits for low power consumption. The power consumption of the PLL chip is under 30mW. Fully differential LC VCO is used to provide high oscillation frequency. A new design of LC VCO using carbon nanotube (CNT) wire inductor has been proposed. The PLL design using CNT-LC VCO shows significant improvement in phase noise due to high-Q LC circuit

Design methodology for reliable and energy efficient self-tuned on-chip voltage regulators

The energy-efficiency needs in computing systems, ranging from high performance processors to low-power devices is steadily on the rise, resulting in increasing popularity of on-chip voltage regulators (VR). The high-frequency and high bandwidth on-chip voltage regulators such as Inductive voltage regulators (IVR) and Digital Low Dropout regulators (DLDO) significantly enhance the energy-efficiency of a SoC by reducing supply noise and enabling faster voltage transitions. However, IVRs and DLDOs need to cope with the higher variability that exists in the deep nanometer digital nodes since they are fabricated on the same die as the digital core affecting performance of both the VR and digital core. Moreover, in most modern SoCs where multiple power domains are preferred, each VR needs to be designed and optimized for a target load demand which significantly increases the design time and time to market for VR assisted SoCs. This thesis investigates a performance-based auto-tuning algorithm utilizing performance of digital core to tune VRs against variations and improve performance of both VR and the core. We further propose a fully synthesizable VR architecture and an auto-generation tool flow that can be used to design and optimize a VR for given target specifications and auto-generate a GDS layout. This would reduce the design time drastically. And finally, a flexible precision IVR architecture is also explored to further improve transient performance and tolerance to process variations. The proposed IVR and DLDO designs with an AES core and auto-tuning circuits are prototyped in two testchips in 130nm CMOS process and one test chip in 65nm CMOS process. The measurements demonstrate improved performance of IVR and AES core due to performance-based auto-tuning. Moreover, the synthesizable architectures of IVR and DLDO implemented using auto-generation tool flow showed competitive performance with state of art full custom designs with orders of magnitude reduction in design time. Additional improvement in transient performance of IVR is also observed due to the flexible precision feedback loop design.Ph.D

저 잡음 디지털 위상동기루프의 합성

학위논문 (박사)-- 서울대학교 대학원 : 전기·컴퓨터공학부, 2014. 2. 정덕균.As a device scaling proceeds, Charge Pump PLL has been confronted by many design challenges. Especially, a leakage current in loop filter and reduced dynamic range due to a lower operating voltage make it difficult to adopt a conventional analog PLL architecture for a highly scaled technology. To solve these issues, All Digital PLL (ADPLL) has been widely studied recently. ADPLL mitigates a filter leakage and a reduced dynamic range issues by replacing the analog circuits with digital ones. However, it is still difficult to get a low jitter under low supply voltage. In this thesis, we propose a dual loop architecture to achieve a low jitter even with a low supply voltage. And bottom-up based multi-step TDC and DCO are proposed to meet both fine resolution and wide operation range. In the aspect of design methodology, ADPLL has relied on a full custom design method although ADPLL is fully described in HDL (Hardware Description Language). We propose a new cell based layout technique to automatically synthesize the whole circuit and layout. The test chip has no linearity degradation although it is fully synthesized using a commercially available auto P&R tool. We has implemented an all digital pixel clock generator using the proposed dual loop architecture and the cell based layout technique. The entire circuit is automatically synthesized using 28nm CMOS technology. And s-domain linear model is utilized to optimize the jitter of the dual-loop PLL. Test chip occupies 0.032mm2, and achieves a 15ps_rms integrated jitter although it has extremely low input reference clock of 100 kHz. The whole circuit operates at 1.0V and consumes only 3.1mW.Abstract i Lists of Figures vii Lists of Tables xiii 1. Introduction 1 1.1 Thesis Motivation and Organization 1 1.1.1 Motivation 1 1.1.2 Thesis Organization 2 1.2 PLL Design Issues in Scaled CMOS Technology 3 1.2.1 Low Supply Voltage 4 1.2.2 High Leakage Current 6 1.2.3 Device Reliability: NBTI, HCI, TDDB, EM 8 1.2.4 Mismatch due to Proximity Effects: WPE, STI 11 1.3 Overview of Clock Synthesizers 14 1.3.1 Dual Voltage Charge Pump PLL 14 1.3.2 DLL Based Edge Combining Clock Multiplier 16 1.3.3 Recirculation DLL 17 1.3.4 Reference Injected PLL 18 1.3.5 All Digital PLL 19 1.3.6 Flying Adder Clock Synthesizer 20 1.3.7 Dual Loop Hybrid PLL 21 1.3.8 Comparisons 23 2. Tutorial of ADPLL Design 25 2.1 Introduction 25 2.1.1 Motivation for a pure digital 25 2.1.2 Conversion to digital domain 26 2.2 Functional Blocks 26 2.2.1 TDC, and PFD/Charge Pump 26 2.2.2 Digital Loop Filter and Analog R/C Loop Filter 29 2.2.3 DCO and VCO 34 2.2.4 S-domain Model of the Whole Loop 34 2.2.5 ADPLL Loop Design Flow 36 2.3 S-domain Noise Model 41 2.3.1 Noise Transfer Functions 41 2.3.2 Quantization Noise due to Limited TDC Resolution 45 2.3.3 Quantization Noise due to Divider ΔΣ Noise 46 2.3.4 Quantization Noise due to Limited DCO Resolution 47 2.3.5 Quantization Noise due to DCO ΔΣ Dithering 48 2.3.6 Random Noise of DCO and Input Clock 50 2.3.7 Over-all Phase Noise 50 3. Synthesizable All Digital Pixel Clock PLL Design 53 3.1 Overview 53 3.1.1 Introduction of Pixel Clock PLL 53 3.1.1 Design Specifications 55 3.2 Proposed Architecture 60 3.2.1 All Digital Dual Loop PLL 60 3.2.2 2-step controlled TDC 61 3.2.3 3-step controlled DCO 64 3.2.4 Digital Loop Filter 76 3.3 S-domain Noise Model 78 3.4 Loop Parameter Optimization Based on the s-domain Model 85 3.5 RTL and Gate Level Circuit Design 88 3.5.1 Overview of the design flow 88 3.5.2 Behavioral Simulation and Gate level synthesis 89 3.5.1 Preventing a meta-stability 90 3.5.1 Reusable Coding Style 92 3.6 Layout Synthesis 94 3.6.1 Auto P&R 94 3.6.2 Design of Unit Cells 97 3.6.3 Linearity Degradation in Synthesized TDC 98 3.6.4 Linearity Degradation in Synthesized DCO 106 3.7 Experiment Results 109 3.7.1 DCO measurement 109 3.7.2 PLL measurement 113 3.8 Conclusions 117 A. Device Technology Scaling Trends 118 A.1. Motivation for Technology Scaling 118 A.2. Constant Field Scaling 120 A.3. Quasi Constant Voltage Scaling 123 A.4. Device Technology Trends in Real World 124 B. Spice Simulation Tip for a DCO 137 C. Phase Noise to Jitter Conversion 141 Bibliography 144 초록 151Docto

The Telecommunications and Data Acquisition Report

Tracking and ground-based navigation; communications, spacecraft-ground; station control and system technology; capabilities for new projects; networks consolidation program; and network sustaining are described

Dynamic Partial Reconfiguration for Dependable Systems

Moore’s law has served as goal and motivation for consumer electronics manufacturers in the last decades. The results in terms of processing power increase in the consumer electronics devices have been mainly achieved due to cost reduction and technology shrinking. However, reducing physical geometries mainly affects the electronic devices’ dependability, making them more sensitive to soft-errors like Single Event Transient (SET) of Single Event Upset (SEU) and hard (permanent) faults, e.g. due to aging effects. Accordingly, safety critical systems often rely on the adoption of old technology nodes, even if they introduce longer design time w.r.t. consumer electronics. In fact, functional safety requirements are increasingly pushing industry in developing innovative methodologies to design high-dependable systems with the required diagnostic coverage. On the other hand commercial off-the-shelf (COTS) devices adoption began to be considered for safety-related systems due to real-time requirements, the need for the implementation of computationally hungry algorithms and lower design costs. In this field FPGA market share is constantly increased, thanks to their flexibility and low non-recurrent engineering costs, making them suitable for a set of safety critical applications with low production volumes. The works presented in this thesis tries to face new dependability issues in modern reconfigurable systems, exploiting their special features to take proper counteractions with low impacton performances, namely Dynamic Partial Reconfiguration

Degradation in FPGAs: Monitoring, Modeling and Mitigation

This dissertation targets the transistor aging degradation as well as the associated thermal challenges in FPGAs (since there is an exponential relation between aging and chip temperature). The main objectives are to perform experimentation, analysis and device-level model abstraction for modeling the degradation in FPGAs, then to monitor the FPGA to keep track of aging rates and ultimately to propose an aging-aware FPGA design flow to mitigate the aging

NEGATIVE BIAS TEMPERATURE INSTABILITY STUDIES FOR ANALOG SOC CIRCUITS

Negative Bias Temperature Instability (NBTI) is one of the recent reliability issues in sub threshold CMOS circuits. NBTI effect on analog circuits, which require matched device pairs and mismatches, will cause circuit failure. This work is to assess the NBTI effect considering the voltage and the temperature variations. It also provides a working knowledge of NBTI awareness to the circuit design community for reliable design of the SOC analog circuit. There have been numerous studies to date on the NBTI effect to analog circuits. However, other researchers did not study the implication of NBTI stress on analog circuits utilizing bandgap reference circuit. The reliability performance of all matched pair circuits, particularly the bandgap reference, is at the mercy of aging differential. Reliability simulation is mandatory to obtain realistic risk evaluation for circuit design reliability qualification. It is applicable to all circuit aging problems covering both analog and digital. Failure rate varies as a function of voltage and temperature. It is shown that PMOS is the reliabilitysusceptible device and NBTI is the most vital failure mechanism for analog circuit in sub-micrometer CMOS technology. This study provides a complete reliability simulation analysis of the on-die Thermal Sensor and the Digital Analog Converter (DAC) circuits and analyzes the effect of NBTI using reliability simulation tool. In order to check out the robustness of the NBTI-induced SOC circuit design, a bum-in experiment was conducted on the DAC circuits. The NBTI degradation observed in the reliability simulation analysis has given a clue that under a severe stress condition, a massive voltage threshold mismatch of beyond the 2mV limit was recorded. Bum-in experimental result on DAC proves the reliability sensitivity of NBTI to the DAC circuitry

Phase Noise Analyses and Measurements in the Hybrid Memristor-CMOS Phase-Locked Loop Design and Devices Beyond Bulk CMOS

Phase-locked loop (PLLs) has been widely used in analog or mixed-signal integrated circuits. Since there is an increasing market for low noise and high speed devices, PLLs are being employed in communications. In this dissertation, we investigated phase noise, tuning range, jitter, and power performances in different architectures of PLL designs. More energy efficient devices such as memristor, graphene, transition metal di-chalcogenide (TMDC) materials and their respective transistors are introduced in the design phase-locked loop. Subsequently, we modeled phase noise of a CMOS phase-locked loop from the superposition of noises from its building blocks which comprises of a voltage-controlled oscillator, loop filter, frequency divider, phase-frequency detector, and the auxiliary input reference clock. Similarly, a linear time-invariant model that has additive noise sources in frequency domain is used to analyze the phase noise. The modeled phase noise results are further compared with the corresponding phase-locked loop designs in different n-well CMOS processes. With the scaling of CMOS technology and the increase of the electrical field, the problem of short channel effects (SCE) has become dominant, which causes decay in subthreshold slope (SS) and positive and negative shifts in the threshold voltages of nMOS and pMOS transistors, respectively. Various devices are proposed to continue extending Moore\u27s law and the roadmap in semiconductor industry. We employed tunnel field effect transistor owing to its better performance in terms of SS, leakage current, power consumption etc. Applying an appropriate bias voltage to the gate-source region of TFET causes the valence band to align with the conduction band and injecting the charge carriers. Similarly, under reverse bias, the two bands are misaligned and there is no injection of carriers. We implemented graphene TFET and MoS2 in PLL design and the results show improvements in phase noise, jitter, tuning range, and frequency of operation. In addition, the power consumption is greatly reduced due to the low supply voltage of tunnel field effect transistor