Injection of clarity needed?

The legal status of children who stay in hospital for three months or longer gives rise to considerable confusion among managers in social services and social work departments. And the number of young people affected is significant. NHS statistics for the year ending 31 March 2000 suggest that in England around 2,800 children aged 0-19 on admission were discharged after spending more than two months in hospital, as were more than 500 children in Scotland. (A small number of these would have been discharged as adults.) A two-year study, commissioned by the Joseph Rowntree Foundation1 and carried out by the universities of Stirling, Durham, Newcastle and York, investigated the numbers, characteristics and circumstances of children and young people with complex needs who spend long periods in health care settings. Interviews were conducted in England and Scotland with 11 social services or health managers responsible for these children. The findings show a worrying degree of uncertainty about the position of young people who find themselves in a hospital or other health care setting for at least three months. One social services manager believed such children become looked after under the terms of the Children Act 1989. Another said children are not formally looked after but nevertheless receive the same services and safeguards as those who are. One Scottish social work manager did not know whether children going into health care settings for short-term (respite) care are looked after or not. And discussion with the research team's advisory group indicated that the confusion is not confined to our fieldwork areas

Spatially probed electron-electron scattering in a two-dimensional electron gas

Using scanning gate microscopy (SGM), we probe the scattering between a beam of electrons and a two-dimensional electron gas (2DEG) as a function of the beam's injection energy, and distance from the injection point. At low injection energies, we find electrons in the beam scatter by small-angles, as has been previously observed. At high injection energies, we find a surprising result: placing the SGM tip where it back-scatters electrons increases the differential conductance through the system. This effect is explained by a non-equilibrium distribution of electrons in a localized region of 2DEG near the injection point. Our data indicate that the spatial extent of this highly non-equilibrium distribution is within ~1 micrometer of the injection point. We approximate the non-equilibrium region as having an effective temperature that depends linearly upon injection energy.Comment: 8 pages, 6 figure

Gamma-ray bursts with continuous energy injection and their afterglow signature

(Abridged) We discuss a Gamma-ray burst (GRB) fireball with an additional energy injection, either in the form of a Poynting-flux-dominated outflow or a kinetic-energy-dominated matter shell injected after the burst. A total injection energy comparable to that of the impulsive energy in the initial fireball is required to make a detectable signature in the afterglow lightcurves. For the case of a Poynting-flux-dominated injection, this leads to a gradual achromatic bump feature. For the case when the injection is kinetic-energy-dominated, the collision between the rear (injected) and the forward shell mild if the relative velocity between the colliding shells does not exceed a critical value defined by their energy ratio. Otherwise, the injection is violent, and an additional pair of shocks will form at the discontinuity between two colliding shells, so that there are altogether three shock-heated regions from which the emission contributes to the final lightcurves. We describe the shell-merging process in detail and present broadband lightcurves with the injection signatures. A violent collision results in very complicated features, which differs from the gradual bump signature found in the Poynting-flux or mild matter injection cases. In all the cases, the energetics of the fireball as well as the absolute afterglow flux level after the injection are boosted after the injection. Identifying the different injection signatures from future early afterglow observations may provide diagnostics about the nature of the fireball and of the central engine.Comment: emulateapj style, 12 pages, 8 figures, final version accepted for publication in Ap

Detection of spin injection into a double quantum dot: Violation of magnetic-field-inversion symmetry of nuclear polarization instabilities

In mesoscopic systems with spin-orbit coupling, spin-injection into quantum dots at zero magnetic field is expected under a wide range of conditions. However, up to now, a viable approach for experimentally identifying such injection has been lacking. We show that electron spin injection into a spin-blockaded double quantum dot is dramatically manifested in the breaking of magnetic- field-inversion symmetry of nuclear polarization instabilities. Over a wide range of parameters, the asymmetry between positive and negative instability fields is extremely sensitive to the injected electron spin polarization and allows for the detection of even very weak spin injection. This phenomenon may be used to investigate the mechanisms of spin transport, and may hold implications for spin-based information processing

Theory of spin injection

Diffusive theory of spin injection is reviewed and a number of new results is presented for the dc and ac regimes. They were derived by means of the "gamma-technique" allowing to simplify the calculations by choosing the spin injection coefficients through different interfaces as the basic variables. The prospects for increasing spin injection by using resistive spin-selective contacts are emphasized and spin non-conserving contacts are introduced. Finding the basic parameters of a junction from the ac data is discussed.Comment: 4 pages, 2 column REVTeX, to be published in Proceedings of Intern. Symposium on Mesoscopic Superconductivity and Spintronics (Atsugi, March 2002

Spray characteristics of a multi-hole injector for direct-injection gasoline engines

The sprays from a high-pressure multi-hole nozzle injected into a constant-volume chamber have been visualized and quantified in terms of droplet velocity and diameter with a two-component phase Doppler anemometry (PDA) system at injection pressures up to 200 bar and chamber pressures varying from atmospheric to 12 bar. The flow characteristics within the injection system were quantified by means of a fuel injection equipment (FIE) one-dimensional model, providing the injection rate and the injection velocity in the presence of hole cavitation, by an in-house three-dimensional computational fluid dynamics (CFD) model providing the detailed flow distribution for various combinations of nozzle hole configurations, and by a fuel atomization model giving estimates of the droplet size very near to the nozzle exit. The overall spray angle relative to the axis of the injector was found to be almost independent of injection and chamber pressure, a significant advantage relative to swirl pressure atomizers. Temporal droplet velocities were found to increase sharply at the start of injection and then to remain unchanged during the main part of injection, before decreasing rapidly towards the end of injection. The spatial droplet velocity profiles were jet-like at all axial locations, with the local velocity maximum found at the centre of the jet. Within the measured range, the effect of injection pressure on droplet size was rather small while the increase in chamber pressure from atmospheric to 12 bar resulted in much smaller droplet velocities, by up to four-fold, and larger droplet sizes by up to 40 per cent

Spin diffusion and injection in semiconductor structures: Electric field effects

In semiconductor spintronic devices, the semiconductor is usually lightly doped and nondegenerate, and moderate electric fields can dominate the carrier motion. We recently derived a drift-diffusion equation for spin polarization in the semiconductors by consistently taking into account electric-field effects and nondegenerate electron statistics and identified a high-field diffusive regime which has no analogue in metals. Here spin injection from a ferromagnet (FM) into a nonmagnetic semiconductor (NS) is extensively studied by applying this spin drift-diffusion equation to several typical injection structures such as FM/NS, FM/NS/FM, and FM/NS/NS structures. We find that in the high-field regime spin injection from a ferromagnet into a semiconductor is enhanced by several orders of magnitude. For injection structures with interfacial barriers, the electric field further enhances spin injection considerably. In FM/NS/FM structures high electric fields destroy the symmetry between the two magnets at low fields, where both magnets are equally important for spin injection, and spin injection becomes locally determined by the magnet from which carriers flow into the semiconductor. The field-induced spin injection enhancement should also be insensitive to the presence of a highly doped nonmagnetic semiconductor (NS$^+$) at the FM interface, thus FM/NS$^+$/NS structures should also manifest efficient spin injection at high fields. Furthermore, high fields substantially reduce the magnetoresistance observable in a recent experiment on spin injection from magnetic semiconductors