Power packet transferability via symbol propagation matrix

Power packet is a unit of electric power transferred by a power pulse with an information tag. In Shannon's information theory, messages are represented by symbol sequences in a digitized manner. Referring to this formulation, we define symbols in power packetization as a minimum unit of power transferred by a tagged pulse. Here, power is digitized and quantized. In this paper, we consider packetized power in networks for a finite duration, giving symbols and their energies to the networks. A network structure is defined using a graph whose nodes represent routers, sources, and destinations. First, we introduce symbol propagation matrix (SPM) in which symbols are transferred at links during unit times. Packetized power is described as a network flow in a spatio-temporal structure. Then, we study the problem of selecting an SPM in terms of transferability, that is, the possibility to represent given energies at sources and destinations during the finite duration. To select an SPM, we consider a network flow problem of packetized power. The problem is formulated as an M-convex submodular flow problem which is known as generalization of the minimum cost flow problem and solvable. Finally, through examples, we verify that this formulation provides reasonable packetized power.Comment: Submitted to Proceedings of the Royal Society A: Mathematical, Physical and Engineering Science

High-speed gate drive circuit for SiC MOSFET by GaN HEMT

This paper focuses on a development and an evaluation of high-speed gate drive circuit for SiC power MOSFET by GaN HEMT. The increasing requests to SiC power devices face to the difficulty of the gate drive because of the mismatching between device parameters and conventional driving circuits for Si power devices. Up to now, high frequency switching is the main target of logic and radio applications of active devices. The drive circuit of power devises has not been considered at the switching over MHz. Moreover, p-type SiC and GaN power devices are still not in our hand in spite of the development of n-type device. Therefore there are difficulties in the design of symmetric circuit structure to avoid the management of ground setting. This paper proposes a gate drive circuit applied GaN devices for high-speed switching of an SiC MOSFET. The proposed circuit is designed for the operation of SiC MOSFET at 10 MHz. The feasibility is confirmed through a simple switching circuit

High-speed gate drive circuit for SiC MOSFET by GaN HEMT

This paper focuses on a development and an evaluation of high-speed gate drive circuit for SiC power MOSFET by GaN HEMT. The increasing requests to SiC power devices face to the difficulty of the gate drive because of the mismatching between device parameters and conventional driving circuits for Si power devices. Up to now, high frequency switching is the main target of logic and radio applications of active devices. The drive circuit of power devises has not been considered at the switching over MHz. Moreover, p-type SiC and GaN power devices are still not in our hand in spite of the development of n-type device. Therefore there are difficulties in the design of symmetric circuit structure to avoid the management of ground setting. This paper proposes a gate drive circuit applied GaN devices for high-speed switching of an SiC MOSFET. The proposed circuit is designed for the operation of SiC MOSFET at 10 MHz. The feasibility is confirmed through a simple switching circuit

小型Marx発生器を用いた高繰り返しパルスパワー発生技

国立大学法人長岡技術科学大