9,984,285 research outputs found

    On realization of generalized effect algebras

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    A well known fact is that there is a finite orthomodular lattice with an order determining set of states which is not representable in the standard quantum logic, the lattice L(H)L({\mathcal H}) of all closed subspaces of a separable complex Hilbert space. We show that a generalized effect algebra is representable in the operator generalized effect algebra GD(H){\mathcal G}_D({\mathcal H}) of effects of a complex Hilbert space H{\mathcal H} iff it has an order determining set of generalized states. This extends the corresponding results for effect algebras of Rie\v{c}anov\'a and Zajac. Further, any operator generalized effect algebra GD(H){\mathcal G}_D({\mathcal H}) possesses an order determining set of generalized states

    Nernst Effect in Electron-Doped Pr2x_{2-x}Cex_{x}CuO4_4

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    The Nernst effect of Pr2x_{2-x}Cex_{x}CuO4_4 (x=0.13, 0.15, and 0.17) has been measured on thin film samples between 5-120 K and 0-14 T. In comparison to recent measurements on hole-doped cuprates that showed an anomalously large Nernst effect above the resistive Tc_c and Hc2_{c2} \cite{xu,wang1,wang2,capan}, we find a normal Nernst effect above Tc_c and Hc2_{c2} for all dopings. The lack of an anomalous Nernst effect in the electron-doped compounds supports the models that explain this effect in terms of amplitude and phase fluctuations in the hole-doped cuprates. In addition, the Hc2_{c2}(T) determined from the Nernst effect shows a conventional behavior for all dopings. The energy gap determined from Hc2_{c2}(0) decreases as the system goes from under-doping to over-dopingin agreement with the recent tunnelling experiments

    Lexicographic Effect Algebras

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    In the paper we investigate a class of effect algebras which can be represented in the form of the lexicographic product \Gamma(H\lex G,(u,0)), where (H,u)(H,u) is an Abelian unital po-group and GG is an Abelian directed po-group. We study algebraic conditions when an effect algebra is of this form. Fixing a unital po-group (H,u)(H,u), the category of strong (H,u)(H,u)-perfect effect algebra is introduced and it is shown that it is categorically equivalent to the category of directed po-group with interpolation. We show some representation theorems including a subdirect product representation by antilattice lexicographic effect algebras

    Interaction between superconductor and ferromagnetic domains in iron sheath: peak effect in MgB2/Fe wires

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    Interaction between the superconductor and ferromagnet in MgB2/Fe wires results in either a plateau or a peak effect in the field dependence of transport critical current, Ic(H). This is in addition to magnetic shielding of external field. Current theoretical models cannot account for the observed peak effect in Ic(H). This paper shows that the theoretical explanation of the peak effect should be sought in terms of interaction between superconductor and magnetic domain structure, obtained after re-magnetization of the iron sheath by the self-field of the current. There is a minimum value of critical current, below which the re-magnetization of the iron sheath and peak effect in Ic(H) are not observed

    Contribution of Information and Communication Technology (ICT) in Country’S H-Index

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    The aim of this study is to examine the effect of Information and Communication Technology (ICT) development on country’s scientific ranking as measured by H-index. Moreover, this study applies ICT development sub-indices including ICT Use, ICT Access and ICT skill to find the distinct effect of these sub-indices on country’s H-index. To this purpose, required data for the panel of 14 Middle East countries over the period 1995 to 2009 is collected. Findings of the current study show that ICT development increases the H-index of the sample countries. The results also indicate that ICT Use and ICT Skill sub-indices positively contribute to higher H-index but the effect of ICT access on country’s H-index is not clear

    Enhancement of Superconductivity in Disordered Films by Parallel Magnetic Field

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    We show that the superconducting transition temperature T_c(H) of a very thin highly disordered film with strong spin-orbital scattering can be increased by parallel magnetic field H. This effect is due to polarization of magnetic impurity spins which reduces the full exchange scattering rate of electrons; the largest effect is predicted for spin-1/2 impurities. Moreover, for some range of magnetic impurity concentrations the phenomenon of {\it superconductivity induced by magnetic field} is predicted: superconducting transition temperature T_c(H) is found to be nonzero in the range of magnetic fields 0<H<=H<=Hc0 < H^* <= H <= H_c.Comment: 4 pages, 2 figure
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