Magnetic Mn5Ge3 nanocrystals embedded in crystalline Ge: a magnet/semiconductor hybrid synthesized by ion implantation

The integration of ferromagnetic Mn5Ge3 with the Ge matrix is promising for spin injection in a silicon-compatible geometry. In this paper, we report the preparation of magnetic Mn5Ge3 nanocrystals embedded inside the Ge matrix by Mn ions implantation at elevated temperature. By X-ray diffraction and transmission electron microscopy, we observe crystalline Mn5Ge3 with variable size depending on the Mn ion fluence. The electronic structure of Mn in Mn5Ge3 nanocrystals is 3d6 configuration, the same as in bulk Mn5Ge3. A large positive magnetoresistance has been observed at low temperatures. It can be explained by the conductivity inhomogeneity in the magnetic/semiconductor hybrid system.Comment: 16 pages, 5 figure

Precipitation of amorphous ferromagnetic semiconductor phase in epitaxially grown Mn-doped Ge thin films

We investigated the origin of ferromagnetism in epitaxially grown Mn-doped Ge thin films. Using low-temperature molecular beam epitaxy, Mn-doped Ge films were successfully grown without precipitation of ferromagnetic Ge-Mn intermetallic compounds, such as Mn5Ge3. Magnetic circular dichroism measurements revealed that the epitaxially grown Mn-doped Ge films exhibited clear ferromagnetic behavior, but the Zeeman splitting observed at the critical points was not induced by the s,p-d exchange interactions. High-resolution transmission electron microscopy and energy dispersive X-ray spectroscopy analyses show phase separation of amorphous Ge1-xMnx clusters with high Mn content from a Mn-free monocrystalline Ge matrix. Since amorphous Ge1-xMnx was characterized as a homogeneous ferromagnetic semiconductor, the precipitation of the amorphous Ge1-xMnx clusters is the origin of the ferromagnetic semiconductor behavior of the epitaxially grown Mn-doped Ge films.Comment: 12pages, 4figure

Simple and Deterministic Matrix Sketching

We adapt a well known streaming algorithm for approximating item frequencies to the matrix sketching setting. The algorithm receives the rows of a large matrix $A \in \R^{n \times m}$ one after the other in a streaming fashion. It maintains a sketch matrix B \in \R^ {1/\eps \times m} such that for any unit vector $x$ [\|Ax\|^2 \ge \|Bx\|^2 \ge \|Ax\|^2 - \eps \|A\|_{f}^2 \.] Sketch updates per row in $A$ require O(m/\eps^2) operations in the worst case. A slight modification of the algorithm allows for an amortized update time of O(m/\eps) operations per row. The presented algorithm stands out in that it is: deterministic, simple to implement, and elementary to prove. It also experimentally produces more accurate sketches than widely used approaches while still being computationally competitive

Memory effect of Mn5_5Ge3_3 nanomagnets embedded inside a Mn-diluted Ge matrix

Crystalline Mn5Ge3 nanomagnets are formed inside a Mn-diluted Ge matrix using Mn ion implantation. A temperature-dependent memory effect and slow magnetic relaxation are observed below the superparamagnetic blocking temperature of Mn5Ge3. Our findings corroborate that the observed spin-glass-like features are caused by the size distribution of Mn5Ge3 nanomagnets, rather than by the inter-particle interaction through the Mn-diluted Ge matrix.Comment: 10 pages, 4 figures,. submitted to Appl. Phys. Let