Placement for fast and reliable through-silicon-via (TSV) based 3D-IC layouts

The objective of this research is to explore the feasibility of addressing the major performance and reliability problems or issues, such as wirelength, stress-induced carrier mobility variation, temperature, and quality trade-offs, found in three-dimensional integrated circuits (3D ICs) that use through-silicon vias (TSVs) at placement stage. Four main works that support this goal are included. In the first work, wirelength of TSV-based 3D ICs is the main focus. In the second work, stress-induced carrier mobility variation in TSV-based 3D ICs is examined. In the third work, temperature inside TSV-based 3D ICs is investigated. In the final work, the quality trade-offs of TSV-based 3D-IC designs are explored. In the first work, a force-directed, 3D, and gate-level placement algorithm that efficiently handles TSVs is developed. The experiments based on synthesized benchmarks indicate that the developed algorithm helps generate GDSII layouts of 3D-IC designs that are optimized in terms of wirelength. In addition, the impact of TSVs on other physical aspects of 3D-IC designs is also studied by analyzing the GDSII layouts. In the second work, the model for carrier mobility variation caused by TSV and STI stresses is developed as well as the timing analysis flow considering the stresses. The impact of TSV and STI stresses on carrier mobility variation and performance of 3D ICs is studied. Furthermore, a TSV-stress-driven, force-directed, and 3D placement algorithm is developed. It exploits carrier mobility variation, caused by stress around TSVs after fabrication, to improve the timing and area objectives during placement. In addition, the impact of keep-out zone (KOZ) around TSVs on stress, carrier mobility variation, area, wirelength, and performance of 3D ICs is studied. In the third work, two temperature-aware global placement algorithms are developed. They exploit die-to-die thermal coupling in 3D ICs to improve temperature during placement. In addition, a framework used to evaluate the results from temperature-aware global placements is developed. The main component of the framework is a GDSII-level thermal analysis that considers all structures inside a TSV-based 3D IC while computing temperature. The developed placers are compared with several state-of-the-art placers published in recent literature. The experimental results indicate that the developed algorithms help improve the temperature of 3D ICs effectively. In the final work, three block-level design styles for TSV-based die-to-wafer bonded 3D ICs are discussed. Several 3D-IC layouts in the three styles are manually designed. The main difference among these layouts is the position of TSVs. Finally, the area, wirelength, timing, power, temperature, and mechanical stress of all layouts are compared to explore the trade-offs of layout quality.PhDCommittee Chair: Lim, Sung Kyu; Committee Member: Bakir, Muhannad; Committee Member: Kim, Hyesoon; Committee Member: Mukhopadhyay, Saibal; Committee Member: Swaminathan, Madhava

Heterogeneous 2.5D integration on through silicon interposer

© 2015 AIP Publishing LLC. Driven by the need to reduce the power consumption of mobile devices, and servers/data centers, and yet continue to deliver improved performance and experience by the end consumer of digital data, the semiconductor industry is looking for new technologies for manufacturing integrated circuits (ICs). In this quest, power consumed in transferring data over copper interconnects is a sizeable portion that needs to be addressed now and continuing over the next few decades. 2.5D Through-Si-Interposer (TSI) is a strong candidate to deliver improved performance while consuming lower power than in previous generations of servers/data centers and mobile devices. These low-power/high-performance advantages are realized through achievement of high interconnect densities on the TSI (higher than ever seen on Printed Circuit Boards (PCBs) or organic substrates), and enabling heterogeneous integration on the TSI platform where individual ICs are assembled at close proximity

Through-silicon-via-aware prediction and physical design for multi-granularity 3D integrated circuits

The main objective of this research is to predict the wirelength, area, delay, and power of multi-granularity three-dimensional integrated circuits (3D ICs), to develop physical design methodologies and algorithms for the design of multi-granularity 3D ICs, and to investigate the impact of through-silicon vias (TSVs) on the quality of 3D ICs. This dissertation supports these objectives by addressing six research topics. The first pertains to analytical models that predict the interconnects of multi-granularity 3D ICs, and the second focuses on the development of analytical models of the capacitive coupling of TSVs. The third and the fourth topics present design methodologies and algorithms for the design of gate- and block-level 3D ICs, and the fifth topic pertains to the impact of TSVs on the quality of 3D ICs. The final topic addresses topography variation in 3D ICs. The first section of this dissertation presents TSV-aware interconnect prediction models for multi-granularity 3D ICs. As previous interconnect prediction models for 3D ICs did not take TSV area into account, they were not capable of predicting many important characteristics of 3D ICs related to TSVs. This section will present several previous interconnect prediction models that have been improved so that the area occupied by TSVs is taken into account. The new models show numerous important predictions such as the existence of the number of TSVs minimizing wirelength. The second section presents fast estimation of capacitive coupling of TSVs and wires. Since TSV-to-TSV and TSV-to-wire coupling capacitance is dependent on their relative locations, fast estimation of the coupling capacitance of a TSV is essential for the timing optimization of 3D ICs. Simulation results show that the analytical models presented in this section are sufficiently accurate for use at various design steps that require the computation of TSV capacitance. The third and fourth sections present design methodologies and algorithms for gate- and block-level 3D ICs. One of the biggest differences in the design of 2D and 3D ICs is that the latter requires TSV insertion. Since no widely-accepted design methodology designates when, where, and how TSVs are inserted, this work develops and presents several design methodologies for gate- and block-level 3D ICs and physical design algorithms supporting them. Simulation results based on GDSII-level layouts validate the design methodologies and present evidence of their effectiveness. The fifth section explores the impact of TSVs on the quality of 3D ICs. As TSVs become smaller, devices are shrinking, too. Since the relative size of TSVs and devices is more critical to the quality of 3D ICs than the absolute size of TSVs and devices, TSVs and devices should be taken into account in the study of the impact of TSVs on the quality of 3D ICs. In this section, current and future TSVs and devices are combined to produce 3D IC layouts and the impact of TSVs on the quality of 3D ICs is investigated. The final section investigates topography variation in 3D ICs. Since landing pads fabricated in the bottommost metal layer are attached to TSVs, they are larger than TSVs, so they could result in serious topography variation. Therefore, topography variation, especially in the bottommost metal layer, is investigated and two layout optimization techniques are applied to a global placement algorithm that minimizes the topography variation of the bottommost metal layer of 3D ICs.PhDCommittee Chair: Lim, Sung Kyu; Committee Member: Bakir, Muhannad; Committee Member: Kim, Hyesoon; Committee Member: Lee, Hsien-Hsin Sean; Committee Member: Mukhopadhyay, Saiba

HIGH PERFORMANCE CLOCK DISTRIBUTION FOR HIGH-SPEED VLSI SYSTEMS

Tohoku University堀口 進課

Through-Silicon Vias in SiGe BiCMOS and Interposer Technologies for Sub-THz Applications

Im Rahmen der vorliegenden Dissertation zum Thema „Through-Silicon Vias in SiGe BiCMOS and Interposer Technologies for Sub-THz Applications“ wurde auf Basis einer 130 nm SiGe BiCMOS Technologie ein Through-Silicon Via (TSV) Technologiemodul zur Herstellung elektrischer Durchkontaktierungen für die Anwendung im Millimeterwellen und Sub-THz Frequenzbereich entwickelt. TSVs wurden mittels elektromagnetischer Simulationen modelliert und in Bezug auf ihre elektrischen Eigenschaften bis in den sub-THz Bereich bis zu 300 GHz optimiert. Es wurden die Wechselwirkungen zwischen Modellierung, Fertigungstechnologie und den elektrischen Eigenschaften untersucht. Besonderes Augenmerk wurde auf die technologischen Einflussfaktoren gelegt. Daraus schlussfolgernd wurde das TSV Technologiemodul entwickelt und in eine SiGe BiCMOS Technologie integriert. Hierzu wurde eine Via-Middle Integration gewählt, welche eine Freilegung der TSVs von der Wafer Rückseite erfordert. Durch die geringe Waferdicke von ca. 75 μm wird einen Carrier Wafer Handling Prozess verwendet. Dieser Prozess wurde unter der Randbedingung entwickelt, dass eine nachfolgende Bearbeitung der Wafer innerhalb der BiCMOS Pilotlinie erfolgen kann. Die Rückseitenbearbeitung zielt darauf ab, einen Redistribution Layer auf der Rückseite der BiCMOS Wafer zu realisieren. Hierzu wurde ein Prozess entwickelt, um gleichzeitig verschiedene TSV Strukturen mit variablen Geometrien zu realisieren und damit eine hohe TSV Design Flexibilität zu gewährleisten. Die TSV Strukturen wurden von DC bis über 300 GHz charakterisiert und die elektrischen Eigenschaften extrahiert. Dabei wurde gezeigt, dass TSV Verbindungen mit sehr geringer Dämpfung <1 dB bis 300 GHz realisierbar sind und somit ausgezeichnete Hochfrequenzeigenschaften aufweisen. Zuletzt wurden vielfältige Anwendungen wie das Grounding von Hochfrequenzschaltkreisen, Interposer mit Waveguides und 300 GHz Antennen dargestellt. Das Potential für Millimeterwellen Packaging und 3D Integration wurde evaluiert. TSV Technologien sind heutzutage in vielen Anwendungen z.B. im Bereich der Systemintegration von Digitalschaltkreisen und der Spannungsversorgung von integrierten Schaltkreisen etabliert. Im Rahmen dieser Arbeit wurde der Einsatz von TSVs für Millimeterwellen und dem sub-THz Frequenzbereich untersucht und die Anwendung für den sub-THz Bereich bis 300 GHz demonstriert. Dadurch werden neue Möglichkeiten der Systemintegration und des Packaging von Höchstfrequenzsystemen geschaffen.:Bibliographische Beschreibung List of symbols and abbreviations Acknowledgement 1. Introduction 2. FEM Modeling of BiCMOS & Interposer Through-Silicon Vias 3. Fabrication of BiCMOS & Silicon Interposer with TSVs 4. Characterization of BiCMOS Embedded Through-Silicon Vias 5. Applications 6. Conclusion and Future Work 7. Appendix 8. Publications & Patents 9. Bibliography 10. List of Figures and Table

Design automation and analysis of three-dimensional integrated circuits

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2004.Includes bibliographical references (p. 165-176).This dissertation concerns the design of circuits and systems for an emerging technology known as three-dimensional integration. By stacking individual components, dice, or whole wafers using a high-density electromechanical interconnect, three-dimensional integration can achieve scalability and performance exceeding that of conventional fabrication technologies. There are two main contributions of this thesis. The first is a computer-aided design flow for the digital components of a three-dimensional integrated circuit (3-D IC). This flow primarily consists of two software tools: PR3D, a placement and routing tool for custom 3-D ICs based on standard cells, and 3-D Magic, a tool for designing, editing, and testing physical layout characteristics of 3-D ICs. The second contribution of this thesis is a performance analysis of the digital components of 3-D ICs. We use the above tools to determine the extent to which 3-D integration can improve timing, energy, and thermal performance. In doing so, we verify the estimates of stochastic computational models for 3-D IC interconnects and find that the models predict the optimal 3-D wire length to within 20% accuracy. We expand upon this analysis by examining how 3-D technology factors affect the optimal wire length that can be obtained. Our ultimate analysis extends this work by directly considering timing and energy in 3-D ICs. In all cases we find that significant performance improvements are possible. In contrast, thermal performance is expected to worsen with the use of 3-D integration. We examine precisely how thermal behavior scales in 3-D integration and determine quantitatively how the temperature may be controlled during the circuit placement process. We also show how advanced packaging(cont.) technologies may be leveraged to maintain acceptable die temperatures in 3-D ICs. Finally, we explore two issues for the future of 3-D integration. We determine how technology scaling impacts the effect of 3-D integration on circuit performance. We also consider how to improve the performance of digital components in a mixed-signal 3-D integrated circuit. We conclude with a look towards future 3-D IC design tools.by Shamik Das.Ph.D

Constraint-Aware, Scalable, and Efficient Algorithms for Multi-Chip Power Module Layout Optimization

Moving towards an electrified world requires ultra high-density power converters. Electric vehicles, electrified aerospace, data centers, etc. are just a few fields among wide application areas of power electronic systems, where high-density power converters are essential. As a critical part of these power converters, power semiconductor modules and their layout optimization has been identified as a crucial step in achieving the maximum performance and density for wide bandgap technologies (i.e., GaN and SiC). New packaging technologies are also introduced to produce reliable and efficient multichip power module (MCPM) designs to push the current limits. The complexity of the emerging MCPM layouts is surpassing the capability of a manual, iterative design process to produce an optimum design with agile development requirements. An electronic design automation tool called PowerSynth has been introduced with ongoing research toward enhanced capabilities to speed up the optimized MCPM layout design process. This dissertation presents the PowerSynth progression timeline with the methodology updates and corresponding critical results compared to v1.1. The first released version (v1.1) of PowerSynth demonstrated the benefits of layout abstraction, and reduced-order modeling techniques to perform rapid optimization of the MCPM module compared to the traditional, manual, and iterative design approach. However, that version is limited by several key factors: layout representation technique, layout generation algorithms, iterative design-rule-checking (DRC), optimization algorithm candidates, etc. To address these limitations, and enhance PowerSynth’s capabilities, constraint-aware, scalable, and efficient algorithms have been developed and implemented. PowerSynth layout engine has evolved from v1.3 to v2.0 throughout the last five years to incorporate the algorithm updates and generate all 2D/2.5D/3D Manhattan layout solutions. These fundamental changes in the layout generation methodology have also called for updates in the performance modeling techniques and enabled exploring different optimization algorithms. The latest PowerSynth 2 architecture has been implemented to enable electro-thermo-mechanical and reliability optimization on 2D/2.5D/3D MCPM layouts, and set up a path toward cabinet-level optimization. PowerSynth v2.0 computer-aided design (CAD) flow has been hardware-validated through manufacturing and testing of an optimized novel 3D MCPM layout. The flow has shown significant speedup compared to the manual design flow with a comparable optimization result

Test Chip Design for Process Variation Characterization in 3D Integrated Circuits

A test chip design is presented for the characterization of process variations and Through Silicon Via (TSV) induced mechanical stress in 3D integrated circuits. The chip was de- signed, layed-out, and taped-out for fabrication in a 130nm Tezzaron/GlobalFoundries process through CMC microsystems. The test chip takes advantage of the architecture of 3D ICs to split its test structure onto the two tiers of the 3D IC, achieving a device array density of 40.94 m2 per device. The design also has a high spatial resolution and measurement delity compared to similar 2D variation characterization test structures. Background leakage subtraction and radial ltering are two techniques that are ap- plied to the chip's measurements to reduce its error further for subthreshold device current measurements and stress-induced mobility measurements, respectively. Experimental mea- surements are be taken from the chip using a custom PCB measurement setup once the chip has returned from fabrication