Bose-Einstein statistics in thermalization and photoluminescence of quantum well excitons

Quasi-equilibrium relaxational thermodynamics is developed to understand LA-phonon-assisted thermalization of Bose-Einstein distributed excitons in quantum wells. We study the quantum-statistical effects in the relaxational dynamics of the effective temperature of excitons $T = T(t)$. When $T$ is less than the degeneracy temperature $T_0$, well-developed Bose-Einstein statistics of quantum well excitons leads to nonexponential and density-dependent thermalization. At low bath temperatures $T_b \to 0$ the thermalization of quantum-statistically degenerate excitons effectively slows down and $T(t) \propto 1 / \ln t$. We also analyze the optical decay of Bose-Einstein distributed excitons in perfect quantum wells and show how nonclassical statistics influences the effective lifetime $\tau_{opt}$. In particular, $\tau_{opt}$ of a strongly degenerate gas of excitons is given by $2 \tau_R$, where $\tau_R$ is the intrinsic radiative lifetime of quasi-two-dimensional excitons. Kinetics of resonant photoluminescence of quantum well excitons during their thermalization is studied within the thermodynamic approach and taking into account Bose-Einstein statistics. We find density-dependent photoluminescence dynamics of statistically degenerate excitons. Numerical modeling of the thermalization and photoluminescence kinetics of quasi-two-dimensional excitons are given for GaAs/AlGaAs quantum wells.Comment: 19 pages, 9 figures. Phys. Rev. B (accepted for publication

Auger decay of degenerate and Bose-condensed excitons in Cu2_2O

We study the non-radiative Auger decay of excitons in Cu$_2$O, in which two excitons scatter to an excited electron and hole. The exciton decay rate for the direct and the phonon-assisted processes is calculated from first principles; incorporating the band structure of the material leads to a relatively shorter lifetime of the triplet state ortho excitons. We compare our results with the Auger decay rate extracted from data on highly degenerate triplet excitons and Bose-condensed singlet excitons in Cu$_2$O.Comment: 15 pages, revtex, figures available from G. Kavoulaki

Electrical control of optical orientation of neutral and negatively charged excitons in n-type semiconductor quantum well

We report a giant electric field induced increase of spin orientation of excitons in n-type GaAs/AlGaAs quantum well. It correlates strongly with the formation of negatively charged excitons (trions) in the photoluminescence spectra. Under resonant excitation of neutral heavy-hole excitons, the polarization of excitons and trions increases dramatically with electrical injection of electrons within the narrow exciton-trion bias transition in the PL spectra, implying a polarization sensitivity of 200 % per Volt. This effect results from a very efficient trapping of neutral excitons by the quantum well interfacial fluctuations (so-called "natural" quantum dots) containing resident electrons.Comment: 18 pages, 4 figure

Kinetics of indirect excitons in the optically-induced exciton trap

We report on the kinetics of a low-temperature gas of indirect excitons in the optically-induced exciton trap. The excitons in the region of laser excitation are found to rapidly -- within 4 ns -- cool to the lattice temperature T = 1.4 K, while the excitons at the trap center are found to be cold -- essentially at the lattice temperature -- even during the excitation pulse. The loading time of excitons to the trap center is found to be about 40 ns, longer than the cooling time yet shorter than the lifetime of the indirect excitons. The observed time hierarchy is favorable for creating a dense and cold exciton gas in optically-induced traps and for in situ control of the gas by varying the excitation profile in space and time before the excitons recombine.Comment: 4 pages, 3 figure

Energy relaxation during hot-exciton transport in quantum wells: Direct observation by spatially resolved phonon-sideband spectroscopy

We investigate the energy relaxation of excitons during the real-space transport in ZnSe quantum wells by using microphotoluminescence with spatial resolution enhanced by a solid immersion lens. The spatial evolution of the LO-phonon sideband, originating from the LO-phonon assisted recombination of hot excitons, is measured directly. By calculating the LO-phonon assisted recombination probability, we obtain the nonthermal energy distribution of excitons and observe directly the energy relaxation of hot excitons during their transport. We find the excitons remain hot during their transport on a length scale of several micrometers. Thus, the excitonic transport on this scale cannot be described by classical diffusion.Comment: 4 pages, 4 figure