FPGA-based systems for evolvable hardware

Since 1992, year where Hugo de Garis has published the first paper on Evolvable Hardware (EHW), a period of intense creativity has followed. It has been actively researched, developed and applied to various problems. Different approaches have been proposed that created three main classifications: extrinsic, mixtrinsic and intrinsic EHW. Each of these solutions has a real interest. Nevertheless, although the extrinsic evolution generates some excellent results, the intrinsic systems are not so advanced. This paper suggests 3 possible solutions to implement the run-time configuration intrinsic EHW system: FPGA-based Run-Time Configuration system, JBits-based Run-Time Configuration system and Multi-board functional-level Run-Time Configuration system. The main characteristic of the proposed architectures is that they are implemented on Field Programmable Gate Array. A comparison of proposed solutions demonstrates that multi-board functional-level run-time configuration is superior in terms of scalability, flexibility and the implementation easiness

Radiation Effects Measurement Test Structure using GF 32-nm SOI process

abstract: This thesis describes the design of a Single Event Transient (SET) duration measurement test-structure on the Global Foundries (previously IBM) 32-nm silicon-on insulator (SOI) process. The test structure is designed for portability and allows quick design and implementation on a new process node. Such a test structure is critical in analyzing the effects of radiation on complementary metal oxide semi-conductor (CMOS) circuits. The focus of this thesis is the change in pulse width during propagation of SET pulse and build a test structure to measure the duration of a SET pulse generated in real time. This test structure can estimate the SET pulse duration with 10ps resolution. It receives the input SET propagated through a SET capture structure made using a chain of combinational gates. The impact of propagation of the SET in a >200 deep collection structure is studied. A novel methodology of deploying Thick Gate TID structure is proposed and analyzed to build multi-stage chain of combinational gates. Upon using long chain of combinational gates, the most critical issue of pulse width broadening and shortening is analyzed across critical process corners. The impact of using regular standard cells on pulse width modification is compared with NMOS and/or PMOS skewed gates for the chain of combinational gates. A possible resolution to pulse width change is demonstrated using circuit and layout design of chain of inverters, two and three inputs NOR gates. The SET capture circuit is also tested in simulation by introducing a glitch signal that mimics an individual ion strike that could lead to perturbation in SET propagation. Design techniques and skewed gates are deployed to dampen the glitch that occurs under the effect of radiation. Simulation results, layout structures of SET capture circuit and chain of combinational gates are presented.Dissertation/ThesisMasters Thesis Electrical Engineering 201