Experimental Study and Modeling of the g\u3csub\u3em\u3c/sub\u3e-I Dependence of Long-Channel MOSFETs

This paper describes an experimental study and modeling of the current-transconductance dependence of the ALD1106 and ALD1107 arrays. The study tests the hypothesis that the I-g m dependence of these 7.8 μm MOSFETs conforms to the Advanced Compact Model (ACM). Results from performed measurements, however, do not support this expectation. Despite the relatively large length, both ALD1106 and ALD1107 show sufficiently pronounced `short-channel\u27 effects to render the ACM inadequate. As a byproduct of this effort, we confirmed the modified ACM equation. With an m factor of approximately 0.6, it captures the I-g m dependence quite well. The paper also introduces several formulas and procedures for I-g m model extraction and tuning. These are not specific to the ALD transistor family and can be applied to MOSFETs with different physical size and electrical performance

Empirical Model for the Transconductance-Current Dependence of Short-Channel MOSFETs

This work is concerned with the gm-I dependence of sub-micrometer MOSFETs. The transconductance-current expression given by the Advanced Compact Model (ACM) is reviewed and simple modification is proposed. The modification yields an expression which (with proper parametrization) captures the gm-I dependence of short-channel MOSFETs. The proposed expression is “universal” in the sense that it is capable of modeling the gm-I dependence of long-channel MOSFETs, short-channel MOSFETs, and resistively-degenerated BJTs