Electroluminescence and photoluminescence of Ge-implanted Si/SiO_2/Si structures

Electroluminescent devices were fabricated in SiO_2 films containing Ge nanocrystals formed by ion implantation and precipitation during annealing at 900 °C, and the visible room‐temperature electroluminescence and photoluminescence spectra were found to be broadly similar. The electroluminescent devices have an onset for emission in reverse bias of approximately −10 V, suggesting that the mechanism for carrier excitation may be an avalanche breakdown caused by injection of hot carriers into the oxide. The electroluminescent emission was stable for periods exceeding 6 h

Charakterizace tenkovrstvých elektroluminiscenčních součástek

Jádrem této disertační práce bylo studovat optické a elektrické charakteristiky tenkovrstvých elektroluminiscenčních součástek řízených střídavým proudem (ACTFEL) a zejména vliv procesu stárnutí luminiforů na jejich optické a elektrické vlastnosti. Cílem této studie měl být příspěvek ke zvýšení celkové účinnosti luminoforů, vyjádřené pomocí jasu, účinnosti a stability. Vzhledem k tomu, že současnou dominantní technologií plochých obrazovek je LCD, musí se další alternativní technologie plošných displejů porovnávat s LCD. Výhodou ACTFEL displejů proti LCD je lepší rozlišení, větší teplotní rozsah činnosti, větší čtecí úhel, či možnost čtení při mnohem vyšší intenzitě pozadí. Na druhou stranu je jejich nevýhodou vyšší energetická náročnost, problém s odpovídající barevností tří základních barev a podstatně vyšší napětí nutné pro činnost displeje. K dosažení tohoto cíle jsme provedli optická, elektrická a optoelektrická měření ACTFEL struktur a ZnS:Mn luminoforů. Navíc jsme studovali vliv dotování vrstvy pomocí KCl na chování mikrostruktury a na elektroluminiscenční vlastnosti (zejména na jas a světelnou účinnost) ZnS:Mn luminoforů. Provedli jsme i některá, ne zcela obvyklá, měření ACTFEL součástek. Vypočítali jsme i rozptylový poměr nabitých barevných center a simulovali transportní charakteristiky v ACTFEL součástkách. Studovali jsme vliv stárnutí dvou typů ZnS:Mn luminoforů (s vrstvou napařenou či získanou pomocí epitaxe atomových vrstev) monitorováním závislostí svítivost-napětí (L-V), velikost vnitřního náboje - elektrické pole luminoforu (Q-Fp) a kapacitance-napětí (C-V) ve zvolených časových intervalech v průběhu stárnutí. Provedli jsme krátkodobá i dlouhodobá měření a pokusili jsme se i o vizualizaci struktury luminoforu se subvlnovým rozlišením pomocí optického rastrovacího mikroskopu pracujícího v blízkém poli (SNOM). Na praktickém případu zeleného Zn2GeO4:Mn (2% Mn) ACTFEL displeje, pracujícího při 50 Hz, jsme také studovali stabilitu svítivosti pomocí měření závislosti svítivosti na napětí (L-V) a světelné účinnosti na napětí (eta-V). Přitom byl zhodnocen význam těchto charakteristik. Nezanedbatelnou a neoddělitelnou součástí této práce je i její pedagogický aspekt. Předložený text by mohl být využit i jako učebnice pro studenty na mé univerzitě v Lybii.The objective of this thesis is to study the optical and electrical characterization of Alternating-Current Thin-Film ElectroLuminescent (ACTFEL) devices, and specifically the aging process of phosphor materials that comprise the ACTFEL display in an effort to improve the overall performance of the primary phosphor colors in terms of brightness, efficiency and stability. Since the dominant flat-panel display technology is the LCD, an alternative flat-panel display technology must gauge itself in terms of the LCD. The advantages of ACTFEL displays in comparison with LCDs are the ability to pattern much smaller pixel, performance over a wider temperature range, full-viewing angle, and readability with much greater intensity background light. The disadvantages of ACTFEL displays against LCD ones are larger power consumption, lack of adequate chromaticity of the three primary colors, and much larger driving voltages. To achieve these objectives, the optical, electrical, and opto-electric measurements of the ACTFEL structures and ZnS:Mn phosphor hosts were carried out. Moreover, the effect of KCl co-doping on the microstructure and the electroluminescent properties (mainly brightness and luminous efficiency) of ZnS:Mn phosphors has been investigated, too. A non-common electrical characterization of ACTFEL devices has also been provided. We also calculated charged center scattering rates, and simulated the electron transport process in an ACTFEL device The study of the aging characteristics of evaporated and atomic layer epitaxy ZnS:Mn phosphors has been undertaken by monitoring the luminance-voltage (L-V) internal charge-phosphor field (Q-Fp) and capacitance-voltage (C-V) electrical characteristics at in selected time intervals during aging. Short-term and long-term ACTFEL aging studies has been provided and an attempt to visualize locally the structure of phosphor with a subwavelenght resolution using Scanning near-field optical microscope (SNOM) has also been presented. The practical case of a green Zn2GeO4:Mn (2% Mn) ACTFEL device operated at 50 Hz was studied and a luminance stability by a measurement of luminance-voltage (L-V) and luminous efficiency-voltage (eta-V) characteristics has been evaluated. A non-negligible and indiscreptible task of this thesis was also its pedagogical aspect. Therefore, the presented text can be considered as a textbook suitable for our students in Libya.

Luminescence in sulfides : a rich history and a bright future

Sulfide-based luminescent materials have attracted a lot of attention for a wide range of photo-, cathodo- and electroluminescent applications. Upon doping with Ce3+ and Eu2+, the luminescence can be varied over the entire visible region by appropriately choosing the composition of the sulfide host. Main application areas are flat panel displays based on thin film electroluminescence, field emission displays and ZnS-based powder electroluminescence for backlights. For these applications, special attention is given to BaAl2S4:Eu, ZnS:Mn and ZnS:Cu. Recently, sulfide materials have regained interest due to their ability (in contrast to oxide materials) to provide a broad band, Eu2+-based red emission for use as a color conversion material in white-light emitting diodes (LEDs). The potential application of rare-earth doped binary alkaline-earth sulfides, like CaS and SrS, thiogallates, thioaluminates and thiosilicates as conversion phosphors is discussed. Finally, this review concludes with the size-dependent luminescence in intrinsic colloidal quantum dots like PbS and CdS, and with the luminescence in doped nanoparticles

Single layer multi-color luminescent display

The invention is a multi-color luminescent display comprising an insulator substrate and a single layer of host material which may be a phosphor deposited thereon that hosts one or more differential impurities, therein forming a pattern of selected and distinctly colored phosphors such as blue, green, and red phosphors in a single layer of host material. Transparent electrical conductor means may be provided for subjecting selected portions of the pattern of colored phosphors to an electric field thereby forming a multi-color, single layer electroluminescent display

Electroluminescent light sources via soft lithography

Purpose: Microcontact printing is a process used to print high resolution protein arrays for biosensors. We investigate using these techniques to print electrically conductive fine line structures for electroluminescent (E/L) light sources. Approach: The viability of using microcontact printing as a process for electronics fabrication is investigated. Polydimethylsiloxane (PDMS) stamps inked with alkanethiol compounds form Self Assembled Monolayers (SAM) on substrate surfaces, acting as the resist to subsequent etching processes. The printed lines are characterized with regard to their performance as high electric field generators in electroluminescent displays. Findings: It has been demonstrated that microcontact printing is a cheap, repeatable process for fabricating electronic devices. The results demonstrate the viability of the process to fabricate electric field generator structures for E/L light sources with reduced driving voltages. Value: It has been demonstrated that microcontact printing can produce electrically conductive fine-line structures with high resolution, confirming its viability in printed electronics manufacture

Single layer multi-color luminescent display and method of making

The invention is a multi-color luminescent display comprising an insulator substrate and a single layer of host material, which may be a phosphor deposited thereon that hosts one or more different impurities, therein forming a pattern of selected and distinctly colored phosphors such as blue, green, and red phosphors in a single layer of host material. Transparent electrical conductor means may be provided for subjecting selected portions of the pattern of colored phosphors to an electric field, thereby forming a multi-color, single layer electroluminescent display. A method of forming a multi-color luminescent display includes the steps of depositing on an insulator substrate a single layer of host material, which itself may be a phosphor, with the properties to host varying quantities of different impurities and introducing one or more of said different impurities into selected areas of the said single layer of host material by thermal diffusion or ion implantation to form a pattern of phosphors of different colors in the said single layer of host material

Transparent and Flexible Thin Film Electroluminescent Devices Using HiTUS Deposition and Laser Processing Fabrication

Highly transparent thin film electroluminescent structures offering excellent switch on characteristics, high luminance and large break-down voltages have been deposited onto glass and flexible polymeric materials with no substrate heating using high target utilization sputtering. Deposition of ZnS:Mn as the active light emitting layer and Y2O3,Al2O3,Ta2O5, and HfO2 as dielectric materials arranged in single and multiple layer configurations were investigated. Devices incorporating Al2O3,HfO2 quadruple layers demonstrate the highest attainable luminance at low threshold voltage. Single pulse excimer laser irradiation of the phosphor layer prior to deposition of the top dielectric layer enhanced the luminance of the devices. The devices fabricated on glass and polymeric substrates exhibited a maximum luminance of 500 and 450 cdm−2 when driven at 270 VRMS and 220 VRMS, respectively, with a 1.0 kHz sine wave

Homogeneously bright, flexible and foldable lighting devices with functionalised graphene electrodes

Alternating current electroluminescent technology allows the fabrication of large area, flat and flexible lights. Presently the maximum size of a continuous panel is limited by the high resistivity of available transparent electrode materials causing a visible gradient of brightness. Here, we demonstrate that the use of the best known transparent conductor FeCl$_{3}$-intercalated few-layer graphene boosts the brightness of electroluminescent devices by 49$\%$ compared to pristine graphene. Intensity gradients observed for high aspect ratio devices are undetectable when using these highly conductive electrodes. Flat lights on polymer substrates are found to be resilient to repeated and flexural strains.Comment: Published on ACS Materials and Interface