2 research outputs found
Effects of constant voltage stress on p- and n-type organic thin film transistors with poly(methyl methacrylate) gate dielectric
We performed constant voltage stress on oligothiophene-based p- and n-type organic thin-film-transistors,
in the accumulation regime. The stress induced charge trapping, mobility degradation and defect
generation. The specific kinetics depends not only on the applied bias value and polarity, but also on
the semiconductor type. Stress on PMMA capacitors (without the semiconductor film) revealed that most
of the degradation is largely originated by the interaction with the semiconductor layer, which enhances
charge injectio
Effects of constant voltage stress on p- and n-type organic thin film transistors with poly(methyl methacrylate) gate dielectric
none9We performed constant voltage stress on oligothiophene-based p- and n-type organic thin-film-transistors, in the accumulation regime. The stress induced charge trapping, mobility degradation and defect generation. The specific kinetics depends not only on the applied bias value and polarity, but also on the semiconductor type. Stress on PMMA capacitors (without the semiconductor film) revealed that most of the degradation is largely originated by the interaction with the semiconductor layer, which enhances charge injection. © 2013 Elsevier Ltd. All rights reserved.noneN. Wrachien;A. Cester;D. Bari;R. Capelli;R. D'Alpaos;M. c. Muccini;A. Stefani;G. Turatti;G. MeneghessoWrachien, Nicola; Cester, Andrea; Bari, Daniele; R., Capelli; R., D'Alpaos; M. c., Muccini; A., Stefani; G., Turatti; Meneghesso, Gaudenzi