Effectiveness of a school-based doping prevention programme in Spanish adolescents

The purpose of the study is to assess the effectiveness of a school-based programme to improve knowledge, attitudes and beliefs about doping. 540 adolescents (aged 12-13 years old, 50% boys) took part, from eight Spanish schools. Three hundred and thirteen of these were in the experimental group and the rest formed a control group. Six sessions were held, based on international recommendations, during the Physical Education classes, and were assessed with the Questionnaire on the Anti-doping Intervention programme. The principal results showed that the knowledge, attitudes and beliefs about doping improved in the experimental group compared to the control group, for the whole of the questionnaire (p<.001, Eta2=.03) and specifically for the factors Concept (p<.001, Eta2=.004), Utility (p<.01, Eta2=.02) and Sport and doping (p<.01, Eta2=.01). But there were no benefits observed in the factors Methods and Origin of the behaviour. In conclusion, school-based programmes may be useful for improving knowledge, attitudes and beliefs about doping among adolescents

Chemical doping of individual semiconducting carbon-nanotube ropes

We report the effects of potassium doping on the conductance of individual semiconducting single-walled carbon nanotube ropes. We are able to control the level of doping by reversibly intercalating and de-intercalating potassium. Potassium doping changes the carriers in the ropes from holes to electrons. Typical values for the carrier density are found to be ∼100–1000 electrons/μm. The effective mobility for the electrons is μeff∼20–60 cm2 V-1 s-1, a value similar to that reported for the hole effective mobility in nanotubes [R. Martel et al., Appl. Phys. Lett. 73, 2447 (1998)]

Crown Graphene Nanomeshes: Highly Stable Chelation-Doped Semiconducting Materials

Graphene nanomeshes (GNM's) formed by the creation of pore superlattices in graphene, are a possible route to graphene-based electronics due to their semiconducting properties, including the emergence of fractional eV band gaps. The utility of GNM's would be markedly increased if a scheme to stably and controllably dope them was developed. In this work, a chemically-motivated approach to GNM doping based on selective pore-perimeter passivation and subsequent ion chelation is proposed. It is shown by first-principles calculations that ion chelation leads to stable doping of the passivated GNM's -- both {\it n}- and {\it p}-doping are achieved within a rigid-band picture. Such chelated or ``crown'' GNM structures are stable, high mobility semiconducting materials possessing intrinsic doping-concentration control; these can serve as building blocks for edge-free graphene nanoelectronics including GNM-based complementary metal oxide semiconductor (CMOS)-type logic switches.Comment: 18 pages, 6 figure

Extraordinary quasiparticle scattering and bandwidth-control by dopants in iron-based superconductors

The diversities in crystal structures and ways of doping result in extremely diversified phase diagrams for iron-based superconductors. With angle-resolved photoemission spectroscopy (ARPES), we have systematically studied the effects of chemical substitution on the electronic structure of various series of iron-based superconductors. In addition to the control of Fermi surface topology by heterovalent doping, we found two more extraordinary effects of doping: 1. the site and band dependencies of quasiparticle scattering; and more importantly 2. the ubiquitous and significant bandwidth-control by both isovalent and heterovalent dopants in the iron-anion layer. Moreover, we found that the bandwidth-control could be achieved by either applying the chemical pressure or doping electrons, but not by doping holes. Together with other findings provided here, these results complete the microscopic picture of the electronic effects of dopants, which facilitates a unified understanding of the diversified phase diagrams and resolutions to many open issues of various iron-based superconductors.Comment: 12 pages, 9 figure

Graphene field effect transistors with ferroelectric gating

Recent experiments on ferroelectric gating have introduced a novel functionality, i.e. nonvolatility, in graphene field effect transistors. A comprehensive understanding in the non-linear, hysteretic ferroelectric gating and an effective way to control it are still absent. In this letter, we quantitatively characterize the hysteretic ferroelectric gating using the reference of an independent background doping (nBG) provided by normal dielectric gating. More importantly, we prove that nBG can be used to control the ferroelectric gating by unidirectionally shifting the hysteretic ferroelectric doping in graphene. Utilizing this electrostatic effect, we demonstrate symmetrical bit writing in graphene-ferroelectric FETs with resistance change over 500% and reproducible no-volatile switching over 10^5 cycles.Comment: 5 Pages; 4 figures; two column forma

Controlling magnetism in 2D CrI3 by electrostatic doping

The atomic thickness of two-dimensional (2D) materials provides a unique opportunity to control material properties and engineer new functionalities by electrostatic doping. Electrostatic doping has been demonstrated to tune the electrical and optical properties of 2D materials in a wide range, as well as to drive the electronic phase transitions. The recent discovery of atomically thin magnetic insulators has opened up the prospect of electrical control of magnetism and new devices with unprecedented performance. Here we demonstrate control of the magnetic properties of monolayer and bilayer CrI3 by electrostatic doping using a dual-gate field-effect device structure. In monolayer CrI3, doping significantly modifies the saturation magnetization, coercive force and Curie temperature, showing strengthened (weakened) magnetic order with hole (electron) doping. Remarkably, in bilayer CrI3 doping drastically changes the interlayer magnetic order, causing a transition from an antiferromagnetic ground state in the pristine form to a ferromagnetic ground state above a critical electron density. The result reveals a strongly doping-dependent interlayer exchange coupling, which enables robust switching of magnetization in bilayer CrI3 by small gate voltages.Comment: 12 pages and 4 figure

Competition between antiferromagnetism and superconductivity, electron-hole doping asymmetry and "Fermi Surface" topology in cuprates

We investigate the asymmetry between electron and hole doping in a 2D Mott insulator, and the resulting competition between antiferromagnetism (AF) and d-wave superconductivity (SC), using variational Monte Carlo for projected wave functions. We find that key features of the T = 0 phase diagram, such as critical doping for SC-AF coexistence and the maximum value of the SC order parameter, are determined by a single parameter which characterises the topology of the "Fermi surface" at half filling defined by the bare tight-binding parameters. Our results give insight into why AF wins for electron doping, while SC is dominant on the hole doped side. We also suggest using band structure engineering to control the parameter for enhancing SC.Comment: 4 pages, 4 figure

Atomic Hole Doping of Graphene

Graphene is an excellent candidate for the next generation of electronic materials due to the strict two-dimensionality of its electronic structure as well as the extremely high carrier mobility. A prerequisite for the development of graphene based electronics is the reliable control of the type and density of the charge carriers by external (gate) and internal (doping) means. While gating has been successfully demonstrated for graphene flakes and epitaxial graphene on silicon carbide, the development of reliable chemical doping methods turns out to be a real challenge. In particular hole doping is an unsolved issue. So far it has only been achieved with reactive molecular adsorbates, which are largely incompatible with any device technology. Here we show by angle-resolved photoemission spectroscopy that atomic doping of an epitaxial graphene layer on a silicon carbide substrate with bismuth, antimony or gold presents effective means of p-type doping. Not only is the atomic doping the method of choice for the internal control of the carrier density. In combination with the intrinsic n-type character of epitaxial graphene on SiC, the charge carriers can be tuned from electrons to holes, without affecting the conical band structure