Donor behavior in indium-alloyed silicon

The anomalous doping behavior of Si regrown from In solution was studied by (1) Schottky barrier evaluation of conductivity type, (2) electron microprobe analysis for phosphorus, and (3) channeling effect measurements for interstitial In. The latter showed In present at ~ 10^19 cm^–3, but not occupying a regular substitutional or interstitial position. A correlation was found in the first two measurements between phosphorus contamination and n-type conductivity. When the In was contacted only by quartz freshly etched in HF, the n-type behavior and phosphorus contamination disappeared. The anomalous doping behavior is most likely due to phosphorus inpurity picked up by the In

Isotopic effects on the thermal conductivity of graphene nanoribbons: localization mechanism

Thermal conductivity of graphene nanoribbons (GNR) with length 106~{\AA} and width 4.92~{\AA} after isotopic doping is investigated by molecular dynamics with quantum correction. Two interesting phenomena are found: (1) isotopic doping reduces thermal conductivity effectively in low doping region, and the reduction slows down in high doping region; (2) thermal conductivity increases with increasing temperature in both pure and doped GNR; but the increasing behavior is much more slowly in the doped GNR than that in pure ones. Further studies reveal that the physics of these two phenomena is related to the localized phonon modes, whose number increases quickly (slowly) with increasing isotopic doping in low (high) isotopic doping region.Comment: 6 fig

Anomalous organic magnetoresistance from competing carrier-spin-dependent interactions with localized electronic and nuclear spins

We describe a new regime for low-field magnetoresistance in organic semiconductors, in which the spin-relaxing effects of localized nuclear spins and electronic spins interfere. The regime is studied by the controlled addition of localized electronic spins to a material that exhibits substantial room-temperature magnetoresistance ($\sim 20$\%). Although initially the magnetoresistance is suppressed by the doping, at intermediate doping there is a regime where the magnetoresistance is insensitive to the doping level. For much greater doping concentrations the magnetoresistance is fully suppressed. The behavior is described within a theoretical model describing the effect of carrier spin dynamics on the current

Anisotropic resistivity of Na1−δ_{1-\delta}Fe1−x_{1-x}Cox_xAs

Temperature-dependent resistivity is studied in single crystals of iron-arsenide superconductor Na$_{1-\delta}$Fe$_{1-x}$Co$_x$As for electrical current directions along, $\rho_a (T)$, and transverse, $\rho_c (T)$, to the Fe-As layers. Doping with Co increases stability of this compound to reaction with the environment and suppresses numerous features in both $\rho_a(T)$ and $\rho_c(T)$ compared to the stoichiometric NaFeAs. Evolution of $\rho_a (T)$ with $x$ follows a universal trend observed in other pnictide superconductors, exhibiting a $T$-linear temperature dependence close to the optimal doping and development of $T^2$ dependence upon further doping. $\rho_c (T)$ in parent compound shows a non - monotonic behavior with a crossover from non-metallic resistivity increase on cooling from room temperature down to $\sim$ 80 K to a metallic decrease below this temperature. Both $\rho_a (T)$ and $\rho_c (T)$ show several correlated crossover - like features at $T>$ 80 K. Despite a general trend towards more metallic behavior of inter - plane resistivity in Co-doped samples, the temperature of the crossover from insulating to metallic behavior (80 K) does not change much with doping

Impurity-doping induced ferroelectricity in frustrated antiferromagnet CuFeO2

Dielectric responses have been investigated on the triangular-lattice antiferromagnet CuFeO2 and its site-diluted analogs CuFe1-xAlxO2 (x=0.01 and 0.02) with and without application of magnetic field. We have found a ferroelectric behavior at zero magnetic field for x=0.02. At any doping level, the onset field of the ferroelectricity always coincides with that of the noncollinear magnetic structure while the transition field dramatically decreases to zero field with Al doping. The results imply the further possibility of producing the ferroelectricity by modifying the frustrated spin structure in terms of site-doping and external magnetic field.Comment: 4 pages, 4 figure

The charge asymmetry in superconductivity of hole- and electron-doped cuprates

Within the t-t'-J model, the charge asymmetry in superconductivity of hole- and electron-doped cuprates is studied based on the kinetic energy driven superconducting mechanism. It is shown that superconductivity appears over a narrow range of doping in electron-doped cuprates, and the superconducting transition temperature displays the same kind of the doping controlled behavior that is observed in the hole-doped case. However, the maximum achievable superconducting transition temperature in the optimal doping in electron-doped cuprates is much lower than that of the hole-doped case due to the electron-hole asymmetry.Comment: 6 pages, 1 figure, added discussion

Effects of Fe doping in La1/2Ca1/2MnO3

The effect of Fe doping in the Mn site on the magnetic, transport and structural properties of polycrystalline La1/2Ca1/2MnO3 was studied. Doping with low Fe concentration (< 10%) strongly affects electrical transport and magnetization. Long range charge order is disrupted even for the lowest doping level studied (~2%). For Fe concentration up to 5% a ferromagnetic state develops at low temperature with metallic like conduction and thermal hysteresis. In this range, the Curie temperature decreases monotonously as a function of Fe doping. Insulating behavior and a sudden depression of the ferromagnetic state is observed by further Fe doping.Comment: 2 pages, presented at ICM2000, to appear in JMM

Interplane charge dynamics in a valence-bond dynamical mean-field theory of cuprate superconductors

We present calculations of the interplane charge dynamics in the normal state of cuprate superconductors within the valence-bond dynamical mean-field theory. We show that by varying the hole doping, the c-axis optical conductivity and resistivity dramatically change character, going from metallic-like at large doping to insulating-like at low-doping. We establish a clear connection between the behavior of the c-axis optical and transport properties and the destruction of coherent quasiparticles as the pseudogap opens in the antinodal region of the Brillouin zone at low doping. We show that our results are in good agreement with spectroscopic and optical experiments.Comment: 5 pages, 3 figure

Planar hole-doping concentration and effective three-dimensional hole-doping concentration for single-layer high-TcT_c superconductors

We propose that physical properties for the high temperature superconductors can be addressed by either a two-dimensional planar hole-doping concentration ($P_{pl}$) or an effective three-dimentional hole-doping concentration ($P_{3D}$). We find that superconducting transition temperature ($T_c$) exhibits a universal dome-shaped behavior in the $T_c$ $vs.$ $P_{3D}$ plot with a universal optimal doping concentration at $P_{3D}$ $\sim$ 1.6 $\times$ 10$^{21}$ cm$^{-3}$ for the single-layer high temperature superconductors.Comment: 2pages, 2 figures, submitted to Physica C (Proceedings of M2S-HTSC VIII) ; Ref. 10 is revise