Effect of surface pretreatments on the deposition of polycrystalline diamond on silicon nitride substrates using hot filament chemical vapor deposition method

The deposition of diamond films on a silicon nitride (Si3N4) substrate is an attractive technique for industrial applications because of the excellent properties of diamond. Diamond possesses remarkable physical and mechanical properties such as chemical resistant, extreme hardness and highly wears resistant. Pretreatment of substrate is very important prior to diamond deposition to promote nucleation and adhesion between coating and substrate. Polycrystalline diamonds films have been deposited on silicon nitride substrate by Hot Filament Chemical Vapor Deposition (HF-CVD) method. The Si3N4 substrates have been subjected to various pretreatment methods prior to diamond deposition namely chemical etching and mechanical abrasion. The structure and morphology of diamond coating have been studied using X-ray Diffraction (XRD) and Scanning Electron Microscopy (SEM) while diamond film quality has been characterized using Raman spectroscopy. The adhesion of diamond films has been determined qualitatively by using Vickers hardness tester. It was found that the diamond films formed on chemical pretreated substrates has cauliflower morphology and low adhesive strength but also have low surface roughness. Substrates that pretreated with sand blasting have yield diamond film with well-facetted morphology with high crystallinity and better adhesion. However, the surface roughness of the diamond film deposited on substrates pretreated with blasting are also higher

First principles calculation of lithium-phosphorus co-doped diamond

We calculate the density of states (DOS) and the Mulliken population of the diamond and the co-doped diamonds with different concentrations of lithium (Li) and phosphorus (P) by the method of the density functional theory, and analyze the bonding situations of the Li-P co-doped diamond thin films and the impacts of the Li-P co-doping on the diamond conductivities. The results show that the Li-P atoms can promote the split of the diamond energy band near the Fermi level, and improve the electron conductivities of the Li-P co-doped diamond thin films, or even make the Li-P co-doped diamond from semiconductor to conductor. The effect of Li-P co-doping concentration on the orbital charge distributions, bond lengths and bond populations is analyzed. The Li atom may promote the split of the energy band near the Fermi level as well as may favorably regulate the diamond lattice distortion and expansion caused by the P atom.Comment: 14 pages, 11 figure

Diamond anvil cell using boron-doped diamond electrodes covered with undoped diamond insulating layer

Diamond anvil cell using boron-doped metallic diamond electrodes covered with undoped diamond insulating layer have been developed for electrical transport measurements under high pressure. These designed diamonds were grown on a bottom diamond anvil via a nanofabrication process combining microwave plasma-assisted chemical vapor deposition and electron beam lithography. The resistance measurements of high quality FeSe superconducting single crystal under high pressure were successfully demonstrated by just putting the sample and gasket on the bottom diamond anvil directly. The superconducting transition temperature of FeSe single crystal was enhanced up to 43 K by applying uniaxial-like pressure

Partitioning 3-homogeneous latin bitrades

A latin bitrade $(T^{\diamond}, T^{\otimes})$ is a pair of partial latin squares which defines the difference between two arbitrary latin squares $L^{\diamond} \supseteq T^{\diamond}$ and $L^{\diamond} \supseteq T^{\otimes}$ of the same order. A 3-homogeneous bitrade $(T^{\diamond}, T^{\otimes})$ has three entries in each row, three entries in each column, and each symbol appears three times in $T^{\diamond}$. Cavenagh (2006) showed that any 3-homogeneous bitrade may be partitioned into three transversals. In this paper we provide an independent proof of Cavenagh's result using geometric methods. In doing so we provide a framework for studying bitrades as tessellations of spherical, euclidean or hyperbolic space.Comment: 13 pages, 11 figures, fixed the figures. Geometriae Dedicata, Accepted: 13 February 2008, Published online: 5 March 200

Properties of nanostructured diamond-silicon carbide composites sintered by high pressure infiltration technique

A high-pressure silicon infiltration technique was applied to sinter diamond–SiC composites with different diamond crystal sizes. Composite samples were sintered at pressure 8 GPa and temperature 2170 K. The structure of composites was studied by evaluating x-ray diffraction peak profiles using Fourier coefficients of ab initio theoretical size and strain profiles. The composite samples have pronounced nanocrystalline structure: the volume-weighted mean crystallite size is 41–106 nm for the diamond phase and 17–37 nm for the SiC phase. The decrease of diamond crystal size leads to increased dislocation density in the diamond phase, lowers average crystallite sizes in both phases, decreases composite hardness, and improves fracture toughness

Single Color Centers Implanted in Diamond Nanostructures

The development of materials processing techniques for optical diamond nanostructures containing a single color center is an important problem in quantum science and technology. In this work, we present the combination of ion implantation and top-down diamond nanofabrication in two scenarios: diamond nanopillars and diamond nanowires. The first device consists of a 'shallow' implant (~20nm) to generate Nitrogen-vacancy (NV) color centers near the top surface of the diamond crystal. Individual NV centers are then isolated mechanically by dry etching a regular array of nanopillars in the diamond surface. Photon anti-bunching measurements indicate that a high yield (>10%) of the devices contain a single NV center. The second device demonstrates 'deep' (~1\mu m) implantation of individual NV centers into pre-fabricated diamond nanowire. The high single photon flux of the nanowire geometry, combined with the low background fluorescence of the ultrapure diamond, allows us to sustain strong photon anti-bunching even at high pump powers.Comment: 20 pages, 7 figure