27,907 research outputs found
Resistive switching RAM devices based on amorphous oxide semiconductors for system on panel applications
This work reports the mask design, fabrication and characterization of memristor
devices with diode like electrical behavior at pristine state. It is due to the presence
of Schottky junctions between Zinc-tin-oxide (ZTO) and platinum - Indium-galliumzinc-
oxide (IGZO) and molybdenum oxide for two different Metal-Insulator-Metal (MIM)
configurations. The devices were exclusively produced using physical vapor deposition
processes without intentional heating. Typical advanced electrical analysis of ReRAM
device was performed.
The Pt-ZTO-TiAu devices showed pinched hysteresis properties with large Ron=of f
ratio, fast switching which can be controlled in a digital SET and analog RESET operation.
However, large device-to-device variations and stability are the main issues which is due
to the processing.
On the other hand, the Mo-IGZO-Mo devices showed a small Ron=of f ratio and only
analog operation. There was a high yield and stability. However, using DC sweep for
cycling led to a charging phenomenon. Using SET/RESET pulses, the devices sustain
hundreds of cycles without deterioration or movement of the resistance states, showing
great resilience and retention
Semiempirical Modeling of Reset Transitions in Unipolar Resistive-Switching based Memristors
We have measured the transition process from the high to low resistivity states, i.e., the reset process of resistive switching based memristors based on Ni/HfO2/Si-n+ structures, and have also developed an analytical model for their electrical characteristics. When the characteristic curves are plotted in the current-voltage (I-V) domain a high variability is observed. In spite of that, when the same curves are plotted in the charge-flux domain (Q-phi), they can be described by a simple model containing only three parameters: the charge (Qrst) and the flux (rst) at the reset point, and an exponent, n, relating the charge and the flux before the reset transition. The three parameters can be easily extracted from the Q-phi plots. There is a strong correlation between these three parameters, the origin of which is still under study
Impact of laser attacks on the switching behavior of RRAM devices
The ubiquitous use of critical and private data in electronic format requires reliable and secure embedded systems for IoT devices. In this context, RRAMs (Resistive Random Access
Memories) arises as a promising alternative to replace current memory technologies. However,
their suitability for this kind of application, where the integrity of the data is crucial, is still under
study. Among the different typology of attacks to recover information of secret data, laser attack
is one of the most common due to its simplicity. Some preliminary works have already addressed
the influence of laser tests on RRAM devices. Nevertheless, the results are not conclusive since
different responses have been reported depending on the circuit under testing and the features of
the test. In this paper, we have conducted laser tests on individual RRAM devices. For the set of
experiments conducted, the devices did not show faulty behaviors. These results contribute to the
characterization of RRAMs and, together with the rest of related works, are expected to pave the way for the development of suitable countermeasures against external attacks.Postprint (published version
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SiOx-based resistive switching memory integrated in nanopillar structure fabricated by nanosphere lithography
textA highly compact, one diode-one resistor (1D-1R) SiOx-based resistive switching memory device with nano-pillar architecture has been achieved for the first time using nano-sphere lithography. The average nano-pillar height and diameter are 1.3 μm and 130 nm, respectively. Low-voltage electroforming using DC bias and AC pulse response in the 50ns regime demonstrate good potential for high-speed, low-energy nonvolatile memory. Nano-sphere deposition, oxygen-plasma isolation, and nano-pillar formation by deep-Si-etching are studied and optimized for the 1D-1R configurations. Excellent electrical performance, data retention and the potential for wafer-scale integration are promising for future non-volatile memory applications.Materials Science and Engineerin
Overview of ionizing radiation effects in image sensors fabricated in a deep-submicrometer CMOS imaging technology
An overview of ionizing radiation effects in imagers
manufactured in a 0.18-μm CMOS image sensor technology is presented. Fourteen types of image sensors are characterized and irradiated by a 60Co source up to 5 kGy. The differences between these 14 designs allow us to separately estimate the effect of ionizing radiation on microlenses, on low- and zero-threshold-voltage MOSFETs and on several pixel layouts using P+ guard-rings and edgeless transistors. After irradiation, wavelength dependent responsivity drops are observed. All the sensors exhibit a large dark current increase attributed to the shallow trench isolation that surrounds the photodiodes. Saturation voltage rises and readout chain gain variations are also reported. Finally, the radiation hardening perspectives resulting from this paper are discussed
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