A 39GHz Balanced Power Amplifier with Enhanced Linearity in 45 nm SOI CMOS

With the high data rate communication systems that come with fifth-generation (5G) mobile networks, the shift of operation to millimeter-wave frequency becomes inevitable. The expected data rate in 5G is significantly improved over 4G by utilizing the large available channel bandwidth at millimeter wave frequencies and complex data modulation schemes. With this increase in operation frequency, many new challenges arise and research efforts are made to tackle them. Among them, the phased array system is one of the hottest topics as it can be made use of to improve the link budget and overcome the path loss challenge at these frequencies. As the last circuit component in the transmitter's front-end right before the antenna, the power amplifier (PA) is one of the most crucial components with significant effects on overall system performance. Many of the traditional challenges of CMOS PA design such as output power and efficiency, are now compounded with the additional challenges that are imposed on complementary metal-oxide semiconductor (CMOS) PAs in millimeter wave phased array systems. This thesis presents a balanced power amplifier design with enhanced linearity in GlobalFoundries' 45nm silicon-on-insulator (SOI) CMOS technology. By using the balanced topology with each stage terminating with a differential 2-stacked architecture, the PA achieves saturated output power of over 21 dBm. Each of the two identical sub-PAs in the balanced topology uses 2-stage topology with driver and PA co-design method. The linearity is enhanced through careful choice of biasing point and a strategic inter-stage matching network design methodology, resulting in amplitude-to-phase distortion below 1 degree up to the output 1dB compression level of over 19 dBm. The balanced amplifier topology significantly reduces the PA performance variation over mismatched load impedance at the output, thus improving the PA performance over different antenna active impedance caused by varying phased array beam-steering angles. In addition to this, the balanced topology also optimizes the PA input and output return loss, giving a better matching than -20 dB at both input and output, and minimizing the risk of potential issues and performance degradation in the system integration phase. Lastly, the compact transformer based matching networks and quadrature hybrids reduce the chip area occupation of this PA, resulting in a compact design with competitive performance

Instrumentation for Studies of Electron Emission and Charging from Insulators

Making measurements of electron emission properties of insulators is difficult since insulators can charge either negatively or positively under charge particle bombardment. In addition, high incident energies or high fluences can result in modification of a material’s conductivity, bulk and surface charge profile, structural makeup through bond breaking and defect creation, and emission properties. We discuss here some of the charging difficulties associated with making insulator-yield measurements and review the methods used in previous studies of electron emission from insulators. We present work undertaken by our group to make consistent and accurate measurements of the electron/ion yield properties for numerous thin-film and thick insulator materials using innovative instrumentation and techniques. We also summarize some of the necessary instrumentation developed for this purpose including fast-response, low-noise, highsensitivity ammeters; signal isolation and interface to standard computer data acquisition apparatus using opto-isolation, sample-and-hold, and boxcar integration techniques; computer control, automation and timing using Labview software; a multiple sample carousel; a pulsed, compact, low-energy, charge neutralization electron flood gun; and pulsed visible and UV light neutralization sources. This work is supported through funding from the NASA Space Environments and Effects Program and the NASA Graduate Research Fellowship Program

Design methods for 60GHz beamformers in CMOS

The 60GHz band is promising for applications such as high-speed short-range wireless personal-area network (WPAN), real-time video streaming at rates of several-Gbps, automotive radar, and mm-Wave imaging, since it provides a large amount of bandwidth that can freely (i.e. without a license) be used worldwide. However, transceivers at 60GHz pose several additional challenges over microwave transceivers. In addition to the circuit design challenges of implementing high performance 60GHz RF circuits in mainstream CMOS technology, the path loss at 60GHz is significantly higher than at microwave frequencies because of the smaller size of isotropic antennas. This can be overcome by using phased array technology. This thesis studies the new concepts and design techniques that can be used for 60GHz phased array systems. It starts with an overview of various applications at mm-wave frequencies, such as multi-Gbps radio at 60GHz, automotive radar and millimeter-wave imaging. System considerations of mm-wave receivers and transmitters are discussed, followed by the selection of a CMOS technology to implement millimeter-wave (60GHz) systems. The link budget of a 60GHz WPAN is analyzed, which leads to the introduction of phased array techniques to improve system performance. Different phased array architectures are studied and compared. The system requirements of phase shifters are discussed. Several types of conventional RF phase shifters are reviewed. A 60GHz 4-bit passive phase shifter is designed and implemented in a 65nm CMOS technology. Measurement results are presented and compared to published prior art. A 60GHz 4-bit active phase shifter is designed and integrated with low noise amplifier and combiner for a phased array receiver. This is implemented in a 65nm CMOS technology, and the measurement results are presented. The design of a 60GHz 4-bit active phase shifter and its integration with power amplifier is also presented for a phased array transmitter. This is implemented in a 65nm CMOS technology. The measurement results are also presented and compared to reported prior art. The integration of a 60GHz CMOS amplifier and an antenna in a printed circuit-board (PCB) package is investigated. Experimental results are presented and discussed

A review of technologies and design techniques of millimeter-wave power amplifiers

his article reviews the state-of-the-art millimeter-wave (mm-wave) power amplifiers (PAs), focusing on broadband design techniques. An overview of the main solid-state technologies is provided, including Si, gallium arsenide (GaAs), GaN, and other III-V materials, and both field-effect and bipolar transistors. The most popular broadband design techniques are introduced, before critically comparing through the most relevant design examples found in the scientific literature. Given the wide breadth of applications that are foreseen to exploit the mm-wave spectrum, this contribution will represent a valuable guide for designers who need a single reference before adventuring in the challenging task of the mm-wave PA design

Efficient and Linear CMOS Power Amplifier and Front-end Design for Broadband Fully-Integrated 28-GHz 5G Phased Arrays

Demand for data traffic on mobile networks is growing exponentially with time and on a global scale. The emerging fifth-generation (5G) wireless standard is being developed with millimeter-wave (mm-Wave) links as a key technological enabler to address this growth by a 2020 time frame. The wireless industry is currently racing to deploy mm-Wave mobile services, especially in the 28-GHz band. Previous widely-held perceptions of fundamental propagation limitations were overcome using phased arrays. Equally important for success of 5G is the development of low-power, broadband user equipment (UE) radios in commercial-grade technologies. This dissertation demonstrates design methodologies and circuit techniques to tackle the critical challenge of key phased array front-end circuits in low-cost complementary metal oxide semiconductor (CMOS) technology. Two power amplifier (PA) proof-of-concept prototypes are implemented in deeply scaled 28- nm and 40-nm CMOS processes, demonstrating state-of-the-art linearity and efficiency for extremely broadband communication signals. Subsequently, the 40 nm PA design is successfully embedded into a low-power fully-integrated transmit-receive front-end module. The 28 nm PA prototype in this dissertation is the first reported linear, bulk CMOS PA targeting low-power 5G mobile UE integrated phased array transceivers. An optimization methodology is presented to maximizing power added efficiency (PAE) in the PA output stage at a desired error vector magnitude (EVM) and range to address challenging 5G uplink requirements. Then, a source degeneration inductor in the optimized output stage is shown to further enable its embedding into a two-stage transformer-coupled PA. The inductor helps by broadening inter-stage impedance matching bandwidth, and helping to reduce distortion. Designed and fabricated in 1P7M 28 nm bulk CMOS and using a 1 V supply, the PA achieves +4.2 dBm/9% measured Pout/PAE at −25 dBc EVM for a 250 MHz-wide, 64-QAM orthogonal frequency division multiplexing (OFDM) signal with 9.6 dB peak-to-average power ratio (PAPR). The PA also achieves 35.5%/10% PAE for continuous wave signals at saturation/9.6dB back-off from saturation. To the best of the author’s knowledge, these are the highest measured PAE values among published K- and K a-band CMOS PAs to date. To drastically extend the communication bandwidth in 28 GHz-band UE devices, and to explore the potential of CMOS technology for more demanding access point (AP) devices, the second PA is demonstrated in a 40 nm process. This design supports a signal radio frequency bandwidth (RFBW) >3× the state-of-the-art without degrading output power (i.e. range), PAE (i.e. battery life), or EVM (i.e. amplifier fidelity). The three-stage PA uses higher-order, dual-resonance transformer matching networks with bandwidths optimized for wideband linearity. Digital gain control of 9 dB range is integrated for phased array operation. The gain control is a needed functionality, but it is largely absent from reported high-performance mm-Wave PAs in the literature. The PA is fabricated in a 1P6M 40 nm CMOS LP technology with 1.1 V supply, and achieves Pout/PAE of +6.7 dBm/11% for an 8×100 MHz carrier aggregation 64-QAM OFDM signal with 9.7 dB PAPR. This PA therefore is the first to demonstrate the viability of CMOS technology to address even the very challenging 5G AP/downlink signal bandwidth requirement. Finally, leveraging the developed PA design methodologies and circuits, a low power transmit-receive phased array front-end module is fully integrated in 40 nm technology. In transmit-mode, the front-end maintains the excellent performance of the 40 nm PA: achieving +5.5 dBm/9% for the same 8×100 MHz carrier aggregation signal above. In receive-mode, a 5.5 dB noise figure (NF) and a minimum third-order input intercept point (IIP₃) of −13 dBm are achieved. The performance of the implemented CMOS frontend is comparable to state-of-the-art publications and commercial products that were very recently developed in silicon germanium (SiGe) technologies for 5G communication

ANALYSIS AND DESIGN OF SILICON-BASED MILLIMETER-WAVE AMPLIFIERS

Ph.DDOCTOR OF PHILOSOPH

Broadband High Gain mm-Wave CMOS Amplifier With Complex Device Neutralization for 5G Communication System

Presently, the major challenge at the device level is the lack of sufficient device power gain of commercial IC technologies at THz. In this dissertation, we will address this device-level challenge. We first characterize their THz behaviors/modeling. Then, novel circuits-aware device core designs and optimizations to boost the device-level “gain-bandwidth product” at THz are presented. This dissertation presents a wideband power amplifier at THz frequency range. The proposed power amplifier covers the frequency range from 100 to 125 GHz, supporting the operation in the low band of the D-band. Moreover, a novel embedding network, called complex neutralization scheme, is presented to boost the power gain of the device for near-fmax operation. Furthermore, in-house automation program is presented for optimum selection of the complex neutralization embedding network. The goal of this program is to maximize device Gain-BW for the available technology at target operating frequencies. Furthermore, the proposed power amplifier is cascaded to increase the output power along with high gain. The presented work contains 3-stage complex neutralized differential blocks with output power combiner. The matching stages are optimized for low loss and wideband operation. The proposed power amplifier is taped-out on using GlobalFoundries 45nm FD-SOI CMOS process. The electromagnetic simulations for the proposed power amplifier, which is biased in class AB, demonstrate a small signal gain of 19dB at 115 GHz with k factor more than 17. Moreover, the large signal simulations show a peak power added efficiency of 14% with saturated output power of 12.6dBm. The proposed system has a total active area of 0.23mm².M.S

Ultra high data rate CMOS front ends

The availability of numerous mm-wave frequency bands for wireless communication has motivated the exploration of multi-band and multi-mode integrated components and systems in the main stream CMOS technology. This opportunity has faced the RF designer with the transition between schematic and layout. Modeling the performance of circuits after layout and taking into account the parasitic effects resulting from the layout are two issues that are more important and influential at high frequency design. Performing measurements using on-wafer probing at 60 GHz has its own complexities. The very short wave-length of the signals at mm-wave frequencies makes the measurements very sensitive to the effective length and bending of the interfaces. This paper presents different 60 GHz corner blocks, e.g. Low Noise Amplifier, Zero IF mixer, Phase-Locked Loop, a Dual-Mode Mm-Wave Injection-Locked Frequency Divider and an active transformed power amplifiers implemented in CMOS technologies. These results emphasize the feasibility of the realization 60 GHZ integrated components and systems in the main stream CMOS technology