Overview of ionizing radiation effects in image sensors fabricated in a deep-submicrometer CMOS imaging technology

An overview of ionizing radiation effects in imagers manufactured in a 0.18-μm CMOS image sensor technology is presented. Fourteen types of image sensors are characterized and irradiated by a 60Co source up to 5 kGy. The differences between these 14 designs allow us to separately estimate the effect of ionizing radiation on microlenses, on low- and zero-threshold-voltage MOSFETs and on several pixel layouts using P+ guard-rings and edgeless transistors. After irradiation, wavelength dependent responsivity drops are observed. All the sensors exhibit a large dark current increase attributed to the shallow trench isolation that surrounds the photodiodes. Saturation voltage rises and readout chain gain variations are also reported. Finally, the radiation hardening perspectives resulting from this paper are discussed

Smart-Pixel Cellular Neural Networks in Analog Current-Mode CMOS Technology

This paper presents a systematic approach to design CMOS chips with concurrent picture acquisition and processing capabilities. These chips consist of regular arrangements of elementary units, called smart pixels. Light detection is made with vertical CMOS-BJT’s connected in a Darlington structure. Pixel smartness is achieved by exploiting the Cellular Neural Network paradigm [1], [2], incorporating at each pixel location an analog computing cell which interacts with those of nearby pixels. We propose a current-mode implementation technique and give measurements from two 16 x 16 prototypes in a single-poly double-metal CMOS n-well 1.6-µm technology. In addition to the sensory and processing circuitry, both chips incorporate light-adaptation circuitry for automatic contrast adjustment. They obtain smart-pixel densities up to 89 units/mm2, with a power consumption down to 105 µW/unit and image processing times below 2 µs

A Bio-Inspired Vision Sensor With Dual Operation and Readout Modes

This paper presents a novel event-based vision sensor with two operation modes: intensity mode and spatial contrast detection. They can be combined with two different readout approaches: pulse density modulation and time-to-first spike. The sensor is conceived to be a node of an smart camera network made up of several independent an autonomous nodes that send information to a central one. The user can toggle the operation and the readout modes with two control bits. The sensor has low latency (below 1 ms under average illumination conditions), low power consumption (19 mA), and reduced data flow, when detecting spatial contrast. A new approach to compute the spatial contrast based on inter-pixel event communication less prone to mismatch effects than diffusive networks is proposed. The sensor was fabricated in the standard AMS4M2P 0.35-um process. A detailed system-level description and experimental results are provided.Office of Naval Research (USA) N00014-14-1-0355Ministerio de Economía y Competitividad TEC2012- 38921-C02-02, P12-TIC-2338, IPT-2011-1625-43000

A spatial contrast retina with on-chip calibration for neuromorphic spike-based AER vision systems

We present a 32 32 pixels contrast retina microchip that provides its output as an address event representation (AER) stream. Spatial contrast is computed as the ratio between pixel photocurrent and a local average between neighboring pixels obtained with a diffuser network. This current-based computation produces an important amount of mismatch between neighboring pixels, because the currents can be as low as a few pico-amperes. Consequently, a compact calibration circuitry has been included to trimm each pixel. Measurements show a reduction in mismatch standard deviation from 57% to 6.6% (indoor light). The paper describes the design of the pixel with its spatial contrast computation and calibration sections. About one third of pixel area is used for a 5-bit calibration circuit. Area of pixel is 58 m 56 m, while its current consumption is about 20 nA at 1-kHz event rate. Extensive experimental results are provided for a prototype fabricated in a standard 0.35- m CMOS process.Gobierno de España TIC2003-08164-C03-01, TEC2006-11730-C03-01European Union IST-2001-3412

Single Event Effects in CMOS Image Sensors

In this work, 3T Active Pixel Sensors (APS) are exposed to heavy ions (N, Ar, Kr, Xe), and Single Event Effects (SEE) are studied. Devices were fully functional during exposure, no Single Event Latch-up (SEL) or Single Event Functional Interrupt (SEFI) happened. However Single Event Transient (SET) effects happened on frames: line disturbances, and half or full circular clusters of white pixels. The collection of charges in cluster was investigated with arrays of two pixel width (7 and 10 \textmu{}m), with bulk and epitaxial substrates. This paper shows technological and design parameters involved in the transient events. It also shows that STARDUST simulation software can predict cluster obtained for bulk substrate devices. However, the discrepancies in epitaxial layer devices are large - which shows the need for an improved model