18,405 research outputs found
Optimization and evaluation of variability in the programming window of a flash cell with molecular metal-oxide storage
We report a modeling study of a conceptual nonvolatile memory cell based on inorganic molecular metal-oxide clusters as a storage media embedded in the gate dielectric of a MOSFET. For the purpose of this paper, we developed a multiscale simulation framework that enables the evaluation of variability in the programming window of a flash cell with sub-20-nm gate length. Furthermore, we studied the threshold voltage variability due to random dopant fluctuations and fluctuations in the distribution of the molecular clusters in the cell. The simulation framework and the general conclusions of our work are transferrable to flash cells based on alternative molecules used for a storage media
Solcore: A multi-scale, python-based library for modelling solar cells and semiconductor materials
Computational models can provide significant insight into the operation
mechanisms and deficiencies of photovoltaic solar cells. Solcore is a modular
set of computational tools, written in Python 3, for the design and simulation
of photovoltaic solar cells. Calculations can be performed on ideal,
thermodynamic limiting behaviour, through to fitting experimentally accessible
parameters such as dark and light IV curves and luminescence. Uniquely, it
combines a complete semiconductor solver capable of modelling the optical and
electrical properties of a wide range of solar cells, from quantum well devices
to multi-junction solar cells. The model is a multi-scale simulation accounting
for nanoscale phenomena such as the quantum confinement effects of
semiconductor nanostructures, to micron level propagation of light through to
the overall performance of solar arrays, including the modelling of the
spectral irradiance based on atmospheric conditions. In this article we
summarize the capabilities in addition to providing the physical insight and
mathematical formulation behind the software with the purpose of serving as
both a research and teaching tool.Comment: 25 pages, 18 figures, Journal of Computational Electronics (2018
Analytical model of nanowire FETs in a partially ballistic or dissipative transport regime
The intermediate transport regime in nanoscale transistors between the fully
ballistic case and the quasi equilibrium case described by the drift-diffusion
model is still an open modeling issue. Analytical approaches to the problem
have been proposed, based on the introduction of a backscattering coefficient,
or numerical approaches consisting in the MonteCarlo solution of the Boltzmann
transport equation or in the introduction of dissipation in quantum transport
descriptions. In this paper we propose a very simple analytical model to
seamlessly cover the whole range of transport regimes in generic quasi-one
dimensional field-effect transistors, and apply it to silicon nanowire
transistors. The model is based on describing a generic transistor as a chain
of ballistic nanowire transistors in series, or as the series of a ballistic
transistor and a drift-diffusion transistor operating in the triode region. As
an additional result, we find a relation between the mobility and the mean free
path, that has deep consequences on the understanding of transport in nanoscale
devices
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