Method for fabricating solar cells having integrated collector grids

A heterojunction or Schottky barrier photovoltaic device comprising a conductive base metal layer compatible with and coating predominately the exposed surface of the p-type substrate of the device such that a back surface field region is formed at the interface between the device and the base metal layer, a transparent, conductive mixed metal oxide layer in integral contact with the n-type layer of the heterojunction or Schottky barrier device having a metal alloy grid network of the same metal elements of the oxide constituents of the mixed metal oxide layer embedded in the mixed metal oxide layer, an insulating layer which prevents electrical contact between the conductive metal base layer and the transparent, conductive metal oxide layer, and a metal contact means covering the insulating layer and in intimate contact with the metal grid network embedded in the transparent, conductive oxide layer for conducting electrons generated by the photovoltaic process from the device

Solar cell collector and method for producing same

A transparent, conductive collector layer containing conductive metal channels is formed as a layer on a photovoltaic substrate by coating a photovoltaic substract with a conductive mixed metal layer. A heat sink having portions protruding from one of its surfaces is attached. These protruding portions define a continuous pattern in combination with recessed regions among them such that they are in contact with the conductive layer of the photovoltaic substrate. Heating the substrate while simultaneously oxidizing the portions of the conductive layer exposed to a gaseous oxidizing substance forced into the recessed regions of the heat sink, creates a transparent metal oxide layer on the substrate. A continous pattern of highly conductive metal channels is contained in the metal oxide layer

Solar cells having integral collector grids

A heterojunction or Schottky barrier photovoltaic device is described, comprising a conductive base metal layer. A back surface field region was formed at the interface between the device and the base metal layer, a transparent, conductive mixed metal oxide layer in integral contact with the n-type layer of the heterojunction or Schottky barrier device. A metal alloy grid network was included. An insulating layer prevented electrical contact between the conductive metal base layer and the transparent, conductive metal oxide layer

Improved heat shield/radiator

Thermally conductive metal shield is put in direct thermal contact with the mounting plate for the radiation detectors. External surfaces of the shield are insulated by an insulation blanket. The internal faces are covered with a thin layer of quartz with a metallic thermally conductive coating on the hidden faces

Fabric circuits and method of manufacturing fabric circuits

A flexible, fabric-based circuit comprises a non-conductive flexible layer of fabric and a conductive flexible layer of fabric adjacent thereto. A non-conductive thread, an adhesive, and/or other means may be used for attaching the conductive layer to the non-conductive layer. In some embodiments, the layers are attached by a computer-driven embroidery machine at pre-determined portions or locations in accordance with a pre-determined attachment layout before automated cutting. In some other embodiments, an automated milling machine or a computer-driven laser using a pre-designed circuit trace as a template cuts the conductive layer so as to separate an undesired portion of the conductive layer from a desired portion of the conductive layer. Additional layers of conductive fabric may be attached in some embodiments to form a multi-layer construct

A liquid crystal based contact lens display using PEDOT: PSS and obliquely evaporated SiO2

An active spherically conformed liquid crystal cell is presented comprising PEDOT:PSS as a transparent conductive layer and obliquely evaporated SiO2 as an alignment layer. To tackle compatibility issues with the SU8 processing needed for the spacers, an additional buffer layer was included in the fabrication process. The electro-optic response is inspected closely and a contrast measurement is given

Growth of aligned carbon nanotubes on carbon microfibers by dc plasma-enhanced chemical vapor deposition

It is shown that unidirectionally aligned carbon nanotubes can be grown on electrically conductive network of carbon microfibers via control of buffer layer material and applied electric field during dc plasma chemical vapor deposition growth. Ni catalyst deposition on carbon microfiber produces relatively poorly aligned nanotubes with significantly varying diameters and lengths obtained. The insertion of Ti 5 nm thick underlayer between Ni catalyst layer and C microfiber substrate significantly alters the morphology of nanotubes, resulting in much better aligned, finer diameter, and longer array of nanotubes. This beneficial effect is attributed to the reduced reaction between Ni and carbon paper, as well as prevention of plasma etching of carbon paper by inserting a Ti buffer layer. Such a unidirectionally aligned nanotube structure on an open-pore conductive substrate structure may conveniently be utilized as a high-surface-area base electrodes for fuel cells, batteries, and other electrochemical and catalytic reactions