Complementary ferroelectric-capacitor logic for low-power logic-in-memory VLSI

科研費報告書収録論文(課題番号:13558026・基盤研究(B)(2)・13～16/研究代表者:羽生, 貴弘/転送ボトルネックフリー多値ロジックインメモリVLSIの開発と応用

SiOx-based resistive switching memory integrated in nanopillar structure fabricated by nanosphere lithography

textA highly compact, one diode-one resistor (1D-1R) SiOx-based resistive switching memory device with nano-pillar architecture has been achieved for the first time using nano-sphere lithography. The average nano-pillar height and diameter are 1.3 μm and 130 nm, respectively. Low-voltage electroforming using DC bias and AC pulse response in the 50ns regime demonstrate good potential for high-speed, low-energy nonvolatile memory. Nano-sphere deposition, oxygen-plasma isolation, and nano-pillar formation by deep-Si-etching are studied and optimized for the 1D-1R configurations. Excellent electrical performance, data retention and the potential for wafer-scale integration are promising for future non-volatile memory applications.Materials Science and Engineerin