Characterization of CMOS Defects using Transient Signal Analysis,” DFT

We present the results of hardware experiments designed to determine the relative contribution of CMOS coupling mechanisms to off-path signal variations caused by common types of defects. The transient signals measured in defect-free test structures coupled to defective test structures through internodal coupling capacitors, the power supply, the well and substrate are analyzed in the time and frequency domain to determine the characteristics of the signal variations produced by seven types of CMOS defects. The results of these experiments are used in the development of a failure analysis technique based on the analysis of transient signals. Transient Signal Analysis (TSA) [1] is a defect detection technique for digital CMOS devices that is based on the analysis of transient signal behavior. The method analyzes the voltage transient waveforms measured simultaneously at multiple test points while a logic signal transition is applied to the primary inputs. These transient waveforms characterize the physical component