Episodic Memory Measures Complement Structural and Functional MRI for Predicting Cognitive Decline in Apolipoprotein E ε4 Carriers

Apolipo-protein E (APOE) ?4 allele carriers demonstrate greater risk for cognitive decline and Alzheimer\u27s disease than non-carriers. However, factors associated with risk of decline among APOE ?4 carriers are not well-known. In this longitudinal study, we investigated whether discrete aspects of baseline episodic memory performance and structural (sMRI) and function (fMRI) magnetic resonance imaging were associated with cognitive decline in older APOE ?4 carriers and non-carriers. Seventy-eight healthy older adults underwent cognitive testing at baseline and after 18 months, baseline serum APOE genotyping, manually-traced hip-pocampal volume measurement from sMRI, and task-activated fMRI. Cognitive decline was defined as a one SD or greater reduction from baseline on at least one of three cognitive measures at follow-up (Rey Auditory Verbal Learning Test [AVLT] Delayed Recall and Trials 1-5 Sum, Mattis Dementia Rating Scale-2 Total Score). Declining APOE ?4 carriers (n=14) exhibited reduced hippocampal volume (

White matter differences between healthy young ApoE4 carriers and non-carriers identified with tractography and support vector machines.

The apolipoprotein E4 (ApoE4) is an established risk factor for Alzheimer's disease (AD). Previous work has shown that this allele is associated with functional (fMRI) changes as well structural grey matter (GM) changes in healthy young, middle-aged and older subjects. Here, we assess the diffusion characteristics and the white matter (WM) tracts of healthy young (20-38 years) ApoE4 carriers and non-carriers. No significant differences in diffusion indices were found between young carriers (ApoE4+) and non-carriers (ApoE4-). There were also no significant differences between the groups in terms of normalised GM or WM volume. A feature selection algorithm (ReliefF) was used to select the most salient voxels from the diffusion data for subsequent classification with support vector machines (SVMs). SVMs were capable of classifying ApoE4 carrier and non-carrier groups with an extremely high level of accuracy. The top 500 voxels selected by ReliefF were then used as seeds for tractography which identified a WM network that included regions of the parietal lobe, the cingulum bundle and the dorsolateral frontal lobe. There was a non-significant decrease in volume of this WM network in the ApoE4 carrier group. Our results indicate that there are subtle WM differences between healthy young ApoE4 carriers and non-carriers and that the WM network identified may be particularly vulnerable to further degeneration in ApoE4 carriers as they enter middle and old age

Ultrafast separation of photo-doped carriers in Mott antiferromagnets

We use inhomogeneous nonequilibrium dynamical mean-field theory to investigate the spreading of photo-excited carriers in Mott insulating heterostructures with strong internal fields. Antiferromagnetic correlations are found to affect the carrier dynamics in a crucial manner: An antiferromagnetic spin background can absorb energy from photo-excited carriers on an ultrafast timescale, thus enabling fast transport between different layers and the separation of electron and hole-like carriers, whereas in the paramagnetic state, carriers become localized in strong fields. This interplay between charge and spin degrees of freedom can be exploited to control the functionality of devices based on Mott insulating heterostructures with polar layers, e.g., for photovoltaic applications

The determinants of full-service carriers airfares in European hub-to-hub markets

This paper explores the factors influencing the pricing behaviour of full-service carriers in European hub-to-hub markets. Drawing on a 2009 dataset containing route and airfare information, we establish an econometric model to estimate the impact of route structure, alliances, and market concentration on the pricing of European full-service carriers in these markets. The results suggest that alliances on routes connecting two primary hubs, airport concentration, market share inequality and competition from low-cost carriers influence average airfares of full-service carriers in the European hub-to-hub markets

Longitudinal Associations between Physical Activity, Cognitive Status, and Brain Function in Older Adults at Genetic Risk for Alzheimer’s Disease

The apolipoproteinE epsilon4 (APOE-?4) allele is associated with cognitive decline in old age and is a risk factor for Alzheimer\u27s disease (AD). Physical activity (P A) is associated with a reduced risk of incident cognitive impairment, particularly among APOE-?4 carriers. We recently reported greater semantic memory related brain activation in cognitively intact physically active (High P A) APOE-?4 carriers compared to physically inactive (Low PA) ?4 carriers and non-carriers (Smith et al., 2011). Here, we compared longitudinal changes in semantic memory-related brain activation in High PA and Low PA APOE-?4 carriers. Thirty-two older ?4 carriers completed neuropsychological testing and a fMRI semantic memory task (famous name discrimination) at baseline and after 18 months. All participants were cognitively intact at baseline and were classified as High PA (n = 16) or Low PA (n = 16) based on self-report. After 18 months, 5 of 16 High P A and 13 of 16 Low P A were classified as cognitively declining by at least 1 SD decrease in neurocognitive performance (Group difference, p = .011, Fisher\u27s exact test). A fROI analysis of the fMRI data and repeated measures ANOV As revealed significant Group by Time interactions for intensity of semantic memory-related activation. Significantly greater activation at baseline in the High PA group was attenuated over time (no change in Low P A) and resulted in no group differences at the 18-month follow-up. These findings suggest that greater P A at baseline is associated with greater cognitive stability over 18-months in APOE-?4 carriers and reduced neural activation during fame discrimination

Ultrafast nonlinear optical response of Dirac fermions in graphene

The speed of solid-state electronic devices, determined by the temporal dynamics of charge carriers, could potentially reach unprecedented petahertz frequencies through direct manipulation by optical fields, consisting in a million-fold increase from state-of-the-art technology. In graphene, charge carrier manipulation is facilitated by exceptionally strong coupling to optical fields, from which stems an important back-action of photoexcited carriers. Here we investigate the instantaneous response of graphene to ultrafast optical fields, elucidating the role of hot carriers on sub-100 fs timescales. The measured nonlinear response and its dependence on interaction time and field polarization reveal the back-action of hot carriers over timescales commensurate with the optical field. An intuitive picture is given for the carrier trajectories in response to the optical-field polarization state. We note that the peculiar interplay between optical fields and charge carriers in graphene may also apply to surface states in topological insulators with similar Dirac cone dispersion relations.Peer ReviewedPostprint (published version

Imaging ambipolar two-dimensional carriers induced by the spontaneous electric polarization of a polar semiconductor BiTeI

Two-dimensional (2D) mobile carriers are a wellspring of quantum phenomena. Among various 2D-carrier systems, such as field effect transistors and heterostructures, polar materials hold a unique potential; the spontaneous electric polarization in the bulk could generate positive and negative 2D carriers at the surface. Although several experiments have shown ambipolar carriers at the surface of a polar semiconductor BiTeI, their origin is yet to be specified. Here we provide compelling experimental evidences that the ambipolar 2D carriers at the surface of BiTeI are induced by the spontaneous electric polarization. By imaging electron standing waves with spectroscopic imaging scanning tunneling microscopy, we find that positive or negative carriers with Rashba-type spin splitting emerge at the surface correspondingly to the polar directions in the bulk. The electron densities at the surface are constant independently of those in the bulk, corroborating that the 2D carriers are induced by the spontaneous electric polarization. We also successfully image that lateral $p$-$n$ junctions are formed along the boundaries of submicron-scale domains with opposite polar directions. Our study presents a novel means to endow non-volatile, spin-polarized, and ambipolar 2D carriers as well as, without elaborate fabrication, lateral $p$-$n$ junctions of those carriers at atomically-sharp interfaces.Comment: 23 pages, 8 figure