Spatio-temporal dynamics in graphene

Temporally and spectrally resolved dynamics of optically excited carriers in graphene has been intensively studied theoretically and experimentally, whereas carrier diffusion in space has attracted much less attention. Understanding the spatio-temporal carrier dynamics is of key importance for optoelectronic applications, where carrier transport phenomena play an important role. In this work, we provide a microscopic access to the time-, momentum-, and space-resolved dynamics of carriers in graphene. We determine the diffusion coefficient to be $D \approx 360$cm$^{2}$/s and reveal the impact of carrier-phonon and carrier-carrier scattering on the diffusion process. In particular, we show that phonon-induced scattering across the Dirac cone gives rise to back-diffusion counteracting the spatial broadening of the carrier distribution

Ultrafast Optical-Pump Terahertz-Probe Spectroscopy of the Carrier Relaxation and Recombination Dynamics in Epitaxial Graphene

The ultrafast relaxation and recombination dynamics of photogenerated electrons and holes in epitaxial graphene are studied using optical-pump Terahertz-probe spectroscopy. The conductivity in graphene at Terahertz frequencies depends on the carrier concentration as well as the carrier distribution in energy. Time-resolved studies of the conductivity can therefore be used to probe the dynamics associated with carrier intraband relaxation and interband recombination. We report the electron-hole recombination times in epitaxial graphene for the first time. Our results show that carrier cooling occurs on sub-picosecond time scales and that interband recombination times are carrier density dependent.Comment: 4 pages, 5 figure

Direct and Simultaneous Observation of Ultrafast Electron and Hole Dynamics in Germanium

Understanding excited carrier dynamics in semiconductors is crucial for the development of photovoltaics and efficient photonic devices. However, overlapping spectral features in optical/NIR pump-probe spectroscopy often render assignments of separate electron and hole carrier dynamics ambiguous. Here, ultrafast electron and hole dynamics in germanium nanocrystalline thin films are directly and simultaneously observed by attosecond transient absorption spectroscopy (ATAS) in the extreme ultraviolet at the germanium M_{4,5}-edge (~30 eV). We decompose the ATAS spectra into contributions of electronic state blocking and photo-induced band shifts at a carrier density of 8*10^{20}cm^{-3}. Separate electron and hole relaxation times are observed as a function of hot carrier energies. A first order electron and hole decay of ~1 ps suggests a Shockley-Read-Hall recombination mechanism. The simultaneous observation of electrons and holes with ATAS paves the way for investigating few to sub-femtosecond dynamics of both holes and electrons in complex semiconductor materials and across junctions.Comment: Includes Supplementary Informatio

Near-field scanning optical microscopic transient lens for carrier dynamics study in InGaN/GaN

Time-resolved microscopic transient lens (TR-M-TL) and near-field scanning optical microscopic transient lens (NSOM-TL) were performed to reveal temporal and spatial behavior of carrier dynamics in InGaN/GaN quantum wells. The carrier and thermal dynamics were observed through the time profile of the TR-M-TL signal. Also, NSOM-photoluminescence and NSOM-TL images were observed at the same time. By comparing these two images, both radiative and nonradiative recombination centers in InGaN active layer were unambiguously discriminated with submicrometer scale. Such nonradiative carrier dynamics has been difficult to observe by conventional techniques in spite of its importance

Ultrafast Momentum Imaging of Pseudospin-Flip Excitations in Graphene

The pseudospin of Dirac electrons in graphene manifests itself in a peculiar momentum anisotropy for photo-excited electron-hole pairs. These interband excitations are in fact forbidden along the direction of the light polarization, and are maximum perpendicular to it. Here, we use time- and angle-resolved photoemission spectroscopy to investigate the resulting unconventional hot carrier dynamics, sampling carrier distributions as a function of energy and in-plane momentum. We first show that the rapidly-established quasi-thermal electron distribution initially exhibits an azimuth-dependent temperature, consistent with relaxation through collinear electron-electron scattering. Azimuthal thermalization is found to occur only at longer time delays, at a rate that depends on the substrate and the static doping level. Further, we observe pronounced differences in the electron and hole dynamics in n-doped samples. By simulating the Coulomb- and phonon-mediated carrier dynamics we are able to disentangle the influence of excitation fluence, screening, and doping, and develop a microscopic picture of the carrier dynamics in photo-excited graphene. Our results clarify new aspects of hot carrier dynamics that are unique to Dirac materials, with relevance for photo-control experiments and optoelectronic device applications.Comment: 23 pages, 12 figure

Nonlinear carrier dynamics in silicon nano-waveguides

Carrier recombination dynamics in strip silicon nano-waveguides is analyzed through time-resolved pump-and-probe experiments, revealing a complex recombination dynamics at densities ranging from ${10^{14}}$ to ${10^{17}}\,$cm$^{{-3}}$. Our results show that the carrier lifetime varies as recombination evolves, with faster decay rates at the initial stages (with lifetime of ${\sim 800}\,$ps), and much slower lifetimes at later stages (up to ${\sim 300}\,$ns). We also observe experimentally the effect of trapping, manifesting as a decay curve highly dependent on the initial carrier density. We further demonstrate that operating at high carrier density can lead to faster recombination rates. Finally, we present a theoretical discussion based on trap-assisted recombination statistics applied to nano-waveguides. Our results can impact the dynamics of several nonlinear nanophotonic devices in which free-carriers play a critical role, and open further opportunities to enhance the performance of all-optical silicon-based devices based on carrier recombination engineering

Free-carrier driven spatio-temporal dynamics in amplifying silicon waveguides

We theoretically investigate the free-carrier induced spatio-temporal dynamics of continuous waves in silicon waveguides embedded in an amplifying medium. Optical propagation is governed by a cubic Ginzburg-Landau equation coupled with an ordinary differential equation accounting for the free-carrier dynamics. We find that, owing to free-carrier dispersion, countinuous waves are modulationally unstable in both anomalous and normal dispersion regimes and chaotically generate unstable accelerating pulses.Comment: 5 pages, 4 figure

Drifting instabilities of cavity solitons in vertical cavity surface-emitting lasers with frequency selective feedback

In this paper we study the formation and dynamics of self-propelled cavity solitons (CSs) in a model for vertical cavity surface-emitting lasers (VCSELs) subjected to external frequency selective feedback (FSF), and build their bifurcation diagram for the case where carrier dynamics is eliminated. For low pump currents, we find that they emerge from the modulational instability point of the trivial solution, where traveling waves with a critical wavenumber are formed. For large currents, the branch of self-propelled solitons merges with the branch of resting solitons via a pitchfork bifurcation. We also show that a feedback phase variation of 2\pi can transform a CS (whether resting or moving) into a different one associated to an adjacent longitudinal external cavity mode. Finally, we investigate the influence of the carrier dynamics, relevant for VCSELs. We find and analyze qualitative changes in the stability properties of resting CSs when increasing the carrier relaxation time. In addition to a drifting instability of resting CSs, a new kind of instability appears for certain ranges of carrier lifetime, leading to a swinging motion of the CS center position. Furthermore, for carrier relaxation times typical of VCSELs the system can display multistability of CSs.Comment: 11 pages, 12 figure