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Anomalous Electron Transport in Field-Effect Transistors with Titanium Ditelluride Semimetal Thin-Film Channels
We report on "graphene-like" mechanical exfoliation of thin films of titanium
ditelluride and investigation of their electronic properties. The exfoliated
crystalline TiTe2 films were used as the channel layers in the back-gated
field-effect transistors fabricated with Ti/Al/Au metal contacts on SiO2/Si
substrates. The room-temperature current-voltage characteristics revealed
strongly non-linear behavior with signatures of the source-drain threshold
voltage similar to those observed in the charge-density-wave devices. The
drain-current showed an unusual non-monotonic dependence on the gate bias
characterized by the presence of multiple peaks. The obtained results can be
potentially used for implementation of the non-Boolean logic gates.Comment: 11 pages, 4 figure
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